Fu, W.; Chen, Q.; Gao, P.; Jiang, L.; Qiu, Y.; Wuu, D.-S.; Horng, R.-H.; Lien, S.-Y.
Performance Improvement of Vertical Channel Indium–Gallium–Zinc Oxide Thin-Film Transistors Using Porous MXene Electrode. Energies 2025, 18, 2331.
https://doi.org/10.3390/en18092331
AMA Style
Fu W, Chen Q, Gao P, Jiang L, Qiu Y, Wuu D-S, Horng R-H, Lien S-Y.
Performance Improvement of Vertical Channel Indium–Gallium–Zinc Oxide Thin-Film Transistors Using Porous MXene Electrode. Energies. 2025; 18(9):2331.
https://doi.org/10.3390/en18092331
Chicago/Turabian Style
Fu, Wanqiang, Qizhen Chen, Peng Gao, Linqin Jiang, Yu Qiu, Dong-Sing Wuu, Ray-Hua Horng, and Shui-Yang Lien.
2025. "Performance Improvement of Vertical Channel Indium–Gallium–Zinc Oxide Thin-Film Transistors Using Porous MXene Electrode" Energies 18, no. 9: 2331.
https://doi.org/10.3390/en18092331
APA Style
Fu, W., Chen, Q., Gao, P., Jiang, L., Qiu, Y., Wuu, D.-S., Horng, R.-H., & Lien, S.-Y.
(2025). Performance Improvement of Vertical Channel Indium–Gallium–Zinc Oxide Thin-Film Transistors Using Porous MXene Electrode. Energies, 18(9), 2331.
https://doi.org/10.3390/en18092331
