Metal/Semiconductor Barrier Properties of Non-Recessed Ti/Al/Ti and Ta/Al/Ta Ohmic Contacts on AlGaN/GaN Heterostructures
Spera, M.; Greco, G.; Lo Nigro, R.; Scalese, S.; Bongiorno, C.; Cannas, M.; Giannazzo, F.; Roccaforte, F. Metal/Semiconductor Barrier Properties of Non-Recessed Ti/Al/Ti and Ta/Al/Ta Ohmic Contacts on AlGaN/GaN Heterostructures. Energies 2019, 12, 2655. https://doi.org/10.3390/en12142655
Spera M, Greco G, Lo Nigro R, Scalese S, Bongiorno C, Cannas M, Giannazzo F, Roccaforte F. Metal/Semiconductor Barrier Properties of Non-Recessed Ti/Al/Ti and Ta/Al/Ta Ohmic Contacts on AlGaN/GaN Heterostructures. Energies. 2019; 12(14):2655. https://doi.org/10.3390/en12142655
Chicago/Turabian StyleSpera, Monia, Giuseppe Greco, Raffaella Lo Nigro, Silvia Scalese, Corrado Bongiorno, Marco Cannas, Filippo Giannazzo, and Fabrizio Roccaforte. 2019. "Metal/Semiconductor Barrier Properties of Non-Recessed Ti/Al/Ti and Ta/Al/Ta Ohmic Contacts on AlGaN/GaN Heterostructures" Energies 12, no. 14: 2655. https://doi.org/10.3390/en12142655