Deep Submicron EGFET Based on Transistor Association Technique for Chemical Sensing
1
Department of Health Sciences, University “Magna Græcia” of Catanzaro, 88100 Catanzaro, Italy
2
Department of Electrical Engineering, University of North Texas, Denton, TX 76203, USA
3
Department of Electrical Engineering and Computer Science, University of Missouri, Columbia, MO 65211, USA
*
Author to whom correspondence should be addressed.
†
The authors equally contributed to the manuscript.
Sensors 2019, 19(5), 1063; https://doi.org/10.3390/s19051063
Received: 11 February 2019
/
Revised: 21 February 2019
/
Accepted: 22 February 2019
/
Published: 2 March 2019
(This article belongs to the Special Issue Electronic Interfaces for Sensors)
Extended-gate field-effect transistor (EGFET) is an electronic interface originally developed as a substitute for an ion-sensitive field-effect transistor (ISFET). Although the literature shows that commercial off-the-shelf components are widely used for biosensor fabrication, studies on electronic interfaces are still scarce (e.g., noise processes, scaling). Therefore, the incorporation of a custom EGFET can lead to biosensors with optimized performance. In this paper, the design and characterization of a transistor association (TA)-based EGFET was investigated. Prototypes were manufactured using a 130 nm standard complementary metal-oxide semiconductor (CMOS) process and compared with devices presented in recent literature. A DC equivalence with the counterpart involving a single equivalent transistor was observed. Experimental results showed a power consumption of 24.99 mW at 1.2 V supply voltage with a minimum die area of 0.685 × 1.2 mm2. The higher aspect ratio devices required a proportionally increased die area and power consumption. Conversely, the input-referred noise showed an opposite trend with a minimum of 176.4 nVrms over the 0.1 to 10 Hz frequency band for a higher aspect ratio. EGFET as a pH sensor presented further validation of the design with an average voltage sensitivity of 50.3 mV/pH, a maximum current sensitivity of 15.71 mA1/2/pH, a linearity higher than 99.9%, and the possibility of operating at a lower noise level with a compact design and a low complexity.
View Full-Text
Keywords:
EGFET; electronic interface; biosensors; low noise design; MOSFET; compact modeling; pH sensor
▼
Show Figures
Figure 1
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
MDPI and ACS Style
Pullano, S.A.; Tasneem, N.T.; Mahbub, I.; Shamsir, S.; Greco, M.; Islam, S.K.; Fiorillo, A.S. Deep Submicron EGFET Based on Transistor Association Technique for Chemical Sensing. Sensors 2019, 19, 1063. https://doi.org/10.3390/s19051063
AMA Style
Pullano SA, Tasneem NT, Mahbub I, Shamsir S, Greco M, Islam SK, Fiorillo AS. Deep Submicron EGFET Based on Transistor Association Technique for Chemical Sensing. Sensors. 2019; 19(5):1063. https://doi.org/10.3390/s19051063
Chicago/Turabian StylePullano, Salvatore A., Nishat T. Tasneem, Ifana Mahbub, Samira Shamsir, Marta Greco, Syed K. Islam, and Antonino S. Fiorillo. 2019. "Deep Submicron EGFET Based on Transistor Association Technique for Chemical Sensing" Sensors 19, no. 5: 1063. https://doi.org/10.3390/s19051063
Find Other Styles
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.
