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Open AccessArticle

A High-Temperature Piezoresistive Pressure Sensor with an Integrated Signal-Conditioning Circuit

by 1,2, 1,2,*, 1,2, 1,2, 1,2, 1,2, 1,2 and 1,2,*
1
National Key Laboratory for Electronic Measurement Technology, North University of China, Taiyuan 030051, China
2
Key Laboratory for Instrumentation Science & Dynamic Measurement, North University of China, Ministry of Education, Taiyuan 030051, China
*
Authors to whom correspondence should be addressed.
Academic Editor: Vittorio M. N. Passaro
Sensors 2016, 16(6), 913; https://doi.org/10.3390/s16060913
Received: 6 April 2016 / Revised: 13 June 2016 / Accepted: 14 June 2016 / Published: 18 June 2016
(This article belongs to the Section Physical Sensors)
This paper focuses on the design and fabrication of a high-temperature piezoresistive pressure sensor with an integrated signal-conditioning circuit, which consists of an encapsulated pressure-sensitive chip, a temperature compensation circuit and a signal-conditioning circuit. A silicon on insulation (SOI) material and a standard MEMS process are used in the pressure-sensitive chip fabrication, and high-temperature electronic components are adopted in the temperature-compensation and signal-conditioning circuits. The entire pressure sensor achieves a hermetic seal and can be operated long-term in the range of −50 °C to 220 °C. Unlike traditional pressure sensor output voltage ranges (in the dozens to hundreds of millivolts), the output voltage of this sensor is from 0 V to 5 V, which can significantly improve the signal-to-noise ratio and measurement accuracy in practical applications of long-term transmission based on experimental verification. Furthermore, because this flexible sensor’s output voltage is adjustable, general follow-up pressure transmitter devices for voltage converters need not be used, which greatly reduces the cost of the test system. Thus, the proposed high-temperature piezoresistive pressure sensor with an integrated signal-conditioning circuit is expected to be highly applicable to pressure measurements in harsh environments. View Full-Text
Keywords: SOI; high-temperature piezoresistive pressure sensor; temperature compensation; integrated signal-conditioning circuit SOI; high-temperature piezoresistive pressure sensor; temperature compensation; integrated signal-conditioning circuit
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Yao, Z.; Liang, T.; Jia, P.; Hong, Y.; Qi, L.; Lei, C.; Zhang, B.; Xiong, J. A High-Temperature Piezoresistive Pressure Sensor with an Integrated Signal-Conditioning Circuit. Sensors 2016, 16, 913.

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