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Open AccessArticle

Laterally Driven Resonant Pressure Sensor with Etched Silicon Dual Diaphragms and Combined Beams

Department of Mechanical and Electrical Engineering, Xiamen University, Xiamen 361005, China
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Authors to whom correspondence should be addressed.
Academic Editor: Vittorio M. N. Passaro
Sensors 2016, 16(2), 158; https://doi.org/10.3390/s16020158
Received: 19 November 2015 / Revised: 11 January 2016 / Accepted: 22 January 2016 / Published: 26 January 2016
(This article belongs to the Section Physical Sensors)
A novel structure of the resonant pressure sensor is presented in this paper, which tactfully employs intercoupling between dual pressure-sensing diaphragms and a laterally driven resonant strain gauge. After the resonant pressure sensor principle is introduced, the coupling mechanism of the diaphragms and resonator is analyzed and the frequency equation of the resonator based on the triangle geometry theory is developed for this new coupling structure. The finite element (FE) simulation results match the theoretical analysis over the full scale of the device. This pressure sensor was first fabricated by dry/wet etching and thermal silicon bonding, followed by vacuum-packaging using anodic bonding technology. The test maximum error of the fabricated sensor is 0.0310%F.S. (full scale) in the range of 30 to 190 kPa, its pressure sensitivity is negative and exceeding 8 Hz/kPa, and its Q-factor reaches 20,000 after wafer vacuum-packaging. A novel resonant pressure sensor with high accuracy is presented in this paper. View Full-Text
Keywords: resonant pressure sensor; dual diaphragms; mechanical mechanism; combined beams; high precision; microelectromechanical systems (MEMS) resonant pressure sensor; dual diaphragms; mechanical mechanism; combined beams; high precision; microelectromechanical systems (MEMS)
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MDPI and ACS Style

Du, X.; Liu, Y.; Li, A.; Zhou, Z.; Sun, D.; Wang, L. Laterally Driven Resonant Pressure Sensor with Etched Silicon Dual Diaphragms and Combined Beams. Sensors 2016, 16, 158.

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