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Sensors 2014, 14(1), 1132-1139;

A Non-Intrusive Method for Monitoring the Degradation of MOSFETs

1,2,3,* , 1,2,3
College of Information Engineering, Capital Normal University, Beijing 100048, China
Beijing Engineering Research Center of High Reliable Embedded System, Capital Normal University, Beijing 100048, China
Beijing Key Laboratory of Electronic System Reliable Technology, Capital Normal University, Beijing 100048, China
Author to whom correspondence should be addressed.
Received: 26 November 2013 / Revised: 28 December 2013 / Accepted: 4 January 2014 / Published: 10 January 2014
(This article belongs to the Section Physical Sensors)
Full-Text   |   PDF [404 KB, uploaded 21 June 2014]


Highly reliable embedded systems have been widely applied in the fields of aerospace, nuclear power, high-speed rail, etc., which are related to security and economic development. The reliability of the power supply directly influences the security of the embedded system, and has been the research focus of numerous electronic information and energy studies. The degradation of power modules occupies a dominant position among the key factors affecting the power supply reliability. How to dynamically determine the degradation state and forecast the remaining useful life of working power modules is critical. Therefore, an online non-intrusive method of obtaining the degradation state of MOSFETs based on the Volterra series is proposed. It uses the self-driving signal of MOSFETs as a non-intrusive incentive, and extracts the degradation characteristics of MOSFETs by the frequency-domain kernel of the Volterra series. Experimental results show that the identification achieved by the method agrees well with the theoretical analysis. View Full-Text
Keywords: non-intrusive; degradation; Volterra series; MOSFET non-intrusive; degradation; Volterra series; MOSFET
This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

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Wu, L.-F.; Zheng, Y.; Guan, Y.; Wang, G.-H.; Li, X.-J. A Non-Intrusive Method for Monitoring the Degradation of MOSFETs. Sensors 2014, 14, 1132-1139.

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