Enhanced Resistive Switching and Synaptic Characteristics of ALD Deposited AlN-Based RRAM by Positive Soft Breakdown Process

Yang, Seyeong; Park, Jongmin; Cho, Youngboo; Lee, Yunseok; Kim, Sungjun

doi:10.3390/ijms232113249

Open AccessArticle

Enhanced Resistive Switching and Synaptic Characteristics of ALD Deposited AlN-Based RRAM by Positive Soft Breakdown Process

by

Seyeong Yang

,

Jongmin Park

,

Youngboo Cho

,

Yunseok Lee

and

Sungjun Kim

^*

Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Korea

^*

Author to whom correspondence should be addressed.

Int. J. Mol. Sci. 2022, 23(21), 13249; https://doi.org/10.3390/ijms232113249

Submission received: 15 October 2022 / Revised: 26 October 2022 / Accepted: 29 October 2022 / Published: 31 October 2022

(This article belongs to the Special Issue Feature Papers in Physical Chemistry and Chemical Physics 2022)

Download

Browse Figures

Versions Notes

Abstract

Nitride film played an essential role as an excellent diffusion barrier in the semiconductor field for several decades. In addition, interest in next-generation memories induced researchers’ attention to nitride film as a new storage medium. A Pt/AlN/TaN device was investigated for resistive random-access memory (RRAM) application in this work. Resistive switching properties were examined in the AlN thin film formed by atomic layer deposition (ALD). The unique switching feature conducted under the positive voltage was investigated, while the typical bipolar switching was conducted under the application of negative voltage. Good retention and DC, and pulse endurances were achieved in both conditions and compared to the memory performances. Finally, the electronic behaviors based on the unique switching feature were analyzed through X-ray photoelectron spectroscopy (XPS) and the current–voltage (I–V) linear fitting model.

Keywords: RRAM; aluminum nitride; conduction mechanism; synaptic devices

Share and Cite

MDPI and ACS Style

Yang, S.; Park, J.; Cho, Y.; Lee, Y.; Kim, S. Enhanced Resistive Switching and Synaptic Characteristics of ALD Deposited AlN-Based RRAM by Positive Soft Breakdown Process. Int. J. Mol. Sci. 2022, 23, 13249. https://doi.org/10.3390/ijms232113249

AMA Style

Yang S, Park J, Cho Y, Lee Y, Kim S. Enhanced Resistive Switching and Synaptic Characteristics of ALD Deposited AlN-Based RRAM by Positive Soft Breakdown Process. International Journal of Molecular Sciences. 2022; 23(21):13249. https://doi.org/10.3390/ijms232113249

Chicago/Turabian Style

Yang, Seyeong, Jongmin Park, Youngboo Cho, Yunseok Lee, and Sungjun Kim. 2022. "Enhanced Resistive Switching and Synaptic Characteristics of ALD Deposited AlN-Based RRAM by Positive Soft Breakdown Process" International Journal of Molecular Sciences 23, no. 21: 13249. https://doi.org/10.3390/ijms232113249

APA Style

Yang, S., Park, J., Cho, Y., Lee, Y., & Kim, S. (2022). Enhanced Resistive Switching and Synaptic Characteristics of ALD Deposited AlN-Based RRAM by Positive Soft Breakdown Process. International Journal of Molecular Sciences, 23(21), 13249. https://doi.org/10.3390/ijms232113249

Note that from the first issue of 2016, this journal uses article numbers instead of page numbers. See further details here.

Article Menu

Enhanced Resistive Switching and Synaptic Characteristics of ALD Deposited AlN-Based RRAM by Positive Soft Breakdown Process

Abstract

Share and Cite

Article Metrics

Article Access Statistics

Further Information

Guidelines

MDPI Initiatives

Follow MDPI