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Journal: Int. J. Mol. Sci., 2022
Volume: 23
Number: 13249

Article: Enhanced Resistive Switching and Synaptic Characteristics of ALD Deposited AlN-Based RRAM by Positive Soft Breakdown Process
Authors: by Seyeong Yang, Jongmin Park, Youngboo Cho, Yunseok Lee and Sungjun Kim
Link: https://www.mdpi.com/1422-0067/23/21/13249

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