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Keywords = single shunt resistor

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12 pages, 2765 KB  
Article
Characterization of Magnetoresistive Shunts and Its Sensitivity Temperature Compensation
by Diego Ramírez-Muñoz, Rafael García-Gil, Susana Cardoso and Paulo Freitas
Sensors 2024, 24(10), 3047; https://doi.org/10.3390/s24103047 - 11 May 2024
Cited by 2 | Viewed by 2134
Abstract
The main purpose of the paper is to show how a magnetoresistive (MR) element can work as a current sensor instead of using a Wheatstone bridge composed by four MR elements, defining the concept of a magnetoresistive shunt (MR-shunt). This concept is reached [...] Read more.
The main purpose of the paper is to show how a magnetoresistive (MR) element can work as a current sensor instead of using a Wheatstone bridge composed by four MR elements, defining the concept of a magnetoresistive shunt (MR-shunt). This concept is reached by considering that once the MR element is biased at a constant current, the voltage drop between its terminals offers information, by the MR effect, of the current to be measured, as happens in a conventional shunt resistor. However, an MR-shunt has the advantage of being a non-dissipative shunt since the current of interest does not circulate through the material, preventing its self-heating. Moreover, it provides galvanic isolation. First, we propose an electronic circuitry enabling the utilization of the available MR sensors integrated into a Wheatstone bridge as sensing elements (MR-shunt). This circuitry allows independent characterization of each of the four elements of the bridge. An independently implemented MR element is also analyzed. Secondly, we propose an electronic conditioning circuit for the MR-shunt, which allows both the bridge-integrated element and the single element to function as current sensors in a similar way to the sensing bridge. Third, the thermal variation in the sensitivity of the MR-shunt, and its temperature coefficient, are obtained. An electronic interface is proposed and analyzed for thermal drift compensation of the MR-shunt current sensitivity. With this hardware compensation, temperature coefficients are experimentally reduced from 0.348%/°C without compensation to −0.008%/°C with compensation for an element integrated in a sensor bridge and from 0.474%/°C to −0.0007%/°C for the single element. Full article
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25 pages, 5793 KB  
Article
Current-Sensing Topology with Multi Resistors in Parallel and Its Protection Circuit
by Xuan Gou, Zhongmin Tang, Yuhan Gao, Kai Chen and Houjun Wang
Appl. Sci. 2023, 13(14), 8382; https://doi.org/10.3390/app13148382 - 20 Jul 2023
Viewed by 2663
Abstract
Current-sensing topology with multi resistors in series has limitations in improving the dynamic range of current acquisition, so a sensing topology with multi resistors in parallel is proposed. The overcurrent state of a parallel shunt circuit cannot be latched, resulting in protection hiccups. [...] Read more.
Current-sensing topology with multi resistors in series has limitations in improving the dynamic range of current acquisition, so a sensing topology with multi resistors in parallel is proposed. The overcurrent state of a parallel shunt circuit cannot be latched, resulting in protection hiccups. A dual threshold-detection circuit is designed to achieve protection state latching and self-recovery. The rectified mean circuit is applied for overcurrent magnitude detection and its validity is proved. But the delay and ripple of the output waveform of the rectified mean circuit may also cause protection hiccups. Combining Fourier series representation, Fourier transform and inverse transform, the time domain expressions of the output of the rectified mean circuit for three common waveforms are obtained. Furthermore, the estimation formulas for the residual ripple amplitude of the three waveforms are derived. In an experiment, the protection hiccup issue in parallel sensing topology was eliminated, while the time constants and hysteresis ratios of the protection circuits were properly set according to theoretical calculation results. With five parallel sensing resistors, the ratio of the maximum to minimum range of the single current channel reaches 1.28×104, which is higher than counterparts with multiple series sensing resistors. The advantages of parallel sensing topology in improving dynamic range are confirmed. Full article
(This article belongs to the Special Issue Progress in Electrical Energy Storage System)
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11 pages, 2802 KB  
Article
Design of a Switchable Filter for Reflectionless-Bandpass-to-Reflectionless-Bandstop Responses
by Gangxiong Wu, Hao Wu, Wei Qin, Jin Shi, Wei Zhang, Longlong Lin and Qian Li
Micromachines 2023, 14(2), 424; https://doi.org/10.3390/mi14020424 - 10 Feb 2023
Cited by 6 | Viewed by 2463
Abstract
In this paper, a switchable filter based on the microstrip line (ML) with reflectionless-bandpass-to-reflectionless-bandstop responses is designed, theoretically validated, and fabricated. This single-port reflectionless bandpass filter (R-BPF) consists of a BPF and a shunt-connected bandstop section with terminated absorption resistors. The single-port reflectionless [...] Read more.
In this paper, a switchable filter based on the microstrip line (ML) with reflectionless-bandpass-to-reflectionless-bandstop responses is designed, theoretically validated, and fabricated. This single-port reflectionless bandpass filter (R-BPF) consists of a BPF and a shunt-connected bandstop section with terminated absorption resistors. The single-port reflectionless bandstop filter (R-BSF) is made of a BSF and a parallel bandpass circuit with terminated absorption resistors. These two reflectionless operational modes, namely R-BPF and R-BSF, are allowed to reconfigure the multifunctional filtering device using PIN diodes. In addition, a theoretical analysis of terminal impedance is performed to illustrate the working mechanism of the reflectionless response. To demonstrate the application of the proposed designs, a prototype of the switchable filter for R-BPF to R-BSF responses is fabricated and measured. For the R-BPF mode, the 3-dB fractional bandwidth (FBW) is 36.75% (1.67–2.42 GHz) with a 10-dB reflectionless bandwidth (RBW) of 1.36–2.58 GHz (i.e., FBW of 61.9%). For the R-BSF mode, the 10-dB bandwidth is 13% (1.85–2.11 GHz) with a 10.7-dB RBW of 1–3 GHz (i.e., FBW of 100%). An acceptable agreement between the measured and simulated results has been achieved. Full article
(This article belongs to the Special Issue Microwave Passive Components)
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23 pages, 5226 KB  
Article
A Conductance-Based Silicon Synapse Circuit
by Ashish Gautam and Takashi Kohno
Biomimetics 2022, 7(4), 246; https://doi.org/10.3390/biomimetics7040246 - 16 Dec 2022
Cited by 5 | Viewed by 4066
Abstract
Neuron, synapse, and learning circuits inspired by the brain comprise the key components of a neuromorphic chip. In this study, we present a conductance-based analog silicon synapse circuit suitable for the implementation of reduced or multi-compartment neuron models. Compartmental models are more bio-realistic. [...] Read more.
Neuron, synapse, and learning circuits inspired by the brain comprise the key components of a neuromorphic chip. In this study, we present a conductance-based analog silicon synapse circuit suitable for the implementation of reduced or multi-compartment neuron models. Compartmental models are more bio-realistic. They are implemented in neuromorphic chips aiming to mimic the electrical activities of the neuronal networks in the brain and incorporate biomimetic soma and synapse circuits. Most contemporary low-power analog synapse circuits implement bioinspired “current-based” synaptic models suited for the implementation of single-compartment point neuron models. They emulate the exponential decay profile of the synaptic current, but ignore the effect of the postsynaptic membrane potential on the synaptic current. This dependence is necessary to emulate shunting inhibition, which is thought to play important roles in information processing in the brain. The proposed circuit uses an oscillator-based resistor-type element at its output stage to incorporate this effect. This circuit is used to demonstrate the shunting inhibition phenomenon. Next, to demonstrate that the oscillatory nature of the induced synaptic current has no unforeseen effects, the synapse circuit is employed in a spatiotemporal spike pattern detection task. The task employs the adaptive spike-timing-dependent plasticity (STDP) learning rule, a bio-inspired learning rule introduced in a previous study. The mixed-signal chip is designed in a Taiwan Manufacturing Semiconductor Company 250 nm complementary metal oxide semiconductor technology node. It comprises a biomimetic soma circuit and 256 synapse circuits, along with their learning circuitries. Full article
(This article belongs to the Special Issue Neuromorphic Engineering: Biomimicry from the Brain)
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27 pages, 13806 KB  
Article
High-Speed Control of AC Servo Motor Using High-Performance RBF Neural Network Terminal Sliding Mode Observer and Single Current Reconstructed Technique
by Huaizhi Chen and Changxin Cai
Electronics 2022, 11(10), 1646; https://doi.org/10.3390/electronics11101646 - 21 May 2022
Cited by 4 | Viewed by 4069
Abstract
This paper proposes a phase current reconstruction strategy based on a dc bus using a single current sensor for a surface permanent magnet synchronous motor (SPMSM). The method of a single current sensor reduces the number of mechanical hall sensors and shunt resistors [...] Read more.
This paper proposes a phase current reconstruction strategy based on a dc bus using a single current sensor for a surface permanent magnet synchronous motor (SPMSM). The method of a single current sensor reduces the number of mechanical hall sensors and shunt resistors by using a modified current reconstruction algorithm. The information of rotor position is estimated by the sliding mode observer for its rapid response and strong anti-interference ability, and the observer needs to detect voltage and current components from αβ coordinate system. In order to reduce the buffeting problem of sliding mode observers, an adaptive neural network is introduced, by the way of extracting angle speed estimated values from sliding mode observers, and these values are trained to obtain the compensate angular velocity and minus index value to suppress speed value. The performance of this sensorless speed regulation strategy in the high-speed region using a single current sensor with an optimized adaptive neural network is verified and evaluated by PSIM simulation and experiments. Full article
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15 pages, 4344 KB  
Article
A Precise Current Detection Method Using a Single Shunt and FET Rds(on) of a Low-Voltage Three-Phase Inverter
by Jae-Yeob Hwang, Ji-Hwan Park, Ji-Ho Choi, Jun-Ik Uhm, Geun-Ho Lee and Hee-Sun Lim
Electronics 2022, 11(1), 9; https://doi.org/10.3390/electronics11010009 - 22 Dec 2021
Cited by 4 | Viewed by 6096
Abstract
In this study, a low-voltage three-phase inverter was used alongside a shunt resistor to measure the current. However, it is known that this type of inverter and shunt resistor system has a region where the measurement of current is impossible due to structural [...] Read more.
In this study, a low-voltage three-phase inverter was used alongside a shunt resistor to measure the current. However, it is known that this type of inverter and shunt resistor system has a region where the measurement of current is impossible due to structural limitations. As a result, many studies have focused on this region through the use of additional algorithms. Most studies measured current by forcibly adjusting the PWM duty in order to measure the current at the region where it could not be sensed. However, unfortunately, the total harmonic distortion (THD) increases in the current due to PWM adjustment. This causes an increase in torque ripple and inverter control instability. Therefore, in this paper, current was measured using the Rds(on) value between the drain source resistor when MOSFET was turned on and the Kalman filter in a low-voltage three-phase inverter with a single shunt. Additionally, the value was verified via comparison with the values achieved when a Hall-type current sensor and single shunt were used. As a result, this study confirmed that the inverter with a single shunt performs the same as a Hall-type sensor at the region where current cannot be detected. Full article
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10 pages, 4889 KB  
Article
Compact 20-W GaN Internally Matched Power Amplifier for 2.5 GHz to 6 GHz Jammer Systems
by Min-Pyo Lee, Seil Kim, Sung-June Hong and Dong-Wook Kim
Micromachines 2020, 11(4), 375; https://doi.org/10.3390/mi11040375 - 2 Apr 2020
Cited by 16 | Viewed by 6381
Abstract
In this paper, we demonstrate a compact 20-W GaN internally matched power amplifier for 2.5 to 6 GHz jammer systems which uses a high dielectric constant substrate, single-layer capacitors, and shunt/series resistors for low-Q matching and low-frequency stabilization. A GaN high-electron-mobility transistor (HEMT) [...] Read more.
In this paper, we demonstrate a compact 20-W GaN internally matched power amplifier for 2.5 to 6 GHz jammer systems which uses a high dielectric constant substrate, single-layer capacitors, and shunt/series resistors for low-Q matching and low-frequency stabilization. A GaN high-electron-mobility transistor (HEMT) CGH60030D bare die from Wolfspeed was used as an active device, and input/output matching circuits were implemented on two different substrates using a thin-film process, relative dielectric constants of which were 9.8 and 40, respectively. A series resistor of 2.1 Ω was chosen to minimize the high-frequency loss and obtain a flat gain response. For the output matching circuit, double λ/4 shorted stubs were used to supply the drain current and reduce the output impedance variation of the transistor between the low-frequency and high-frequency regions, which also made wideband matching feasible. Single-layer capacitors effectively helped reduce the size of the matching circuit. The fabricated GaN internally matched power amplifier showed a linear gain of about 10.2 dB, and had an output power of 43.3–43.9 dBm (21.4–24.5 W), a power-added efficiency of 33.4–49.7% and a power gain of 6.2–8.3 dB at the continuous-wave output power condition, from 2.5 to 6 GHz. Full article
(This article belongs to the Special Issue Wide Bandgap Based Devices: Design, Fabrication and Applications)
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18 pages, 23472 KB  
Article
A Novel Phase Current Reconstruction Method for a Three-Level Neutral Point Clamped Inverter (NPCI) with a Neutral Shunt Resistor
by Yungdeug Son and Jangmok Kim
Energies 2018, 11(10), 2616; https://doi.org/10.3390/en11102616 - 1 Oct 2018
Cited by 17 | Viewed by 5537
Abstract
This paper presents three phase current reconstruction methods for a three-level neutral point clamped inverter (NPCI) by measuring the voltage of a shunt resistor placed in the neutral point of the inverter. In order to accurately acquire the phase currents from the shunt [...] Read more.
This paper presents three phase current reconstruction methods for a three-level neutral point clamped inverter (NPCI) by measuring the voltage of a shunt resistor placed in the neutral point of the inverter. In order to accurately acquire the phase currents from the shunt resister, the dwell time of the active voltage vectors need to exceed the minimum time. On the other hand, if the time of active voltage is shorter than the minimum time, the current measurement becomes impossible. In this paper, unmeasurable regions for current are classified into three areas. Area 1 is a region in which both phase currents can be measure. Therefore, it is not necessary to restore the current. In Area 2, only one phase current can be measured. Thus, an estimation or restoration method is needed to measure another phase current. In this paper, the current estimation method using an electrical model of the motor is proposed. Area 3 is the region in which both phase currents can not be measured. In this case, it is necessary to move the voltage vector to the current measurable area by injecting the voltage. In this paper, Area 3 is divided into 36 sectors to inject optimal voltage. The proposed methods have the advantages of high current measurement accuracy and low THD (total harmonic distortion). The effectiveness of the proposed methods are verified through experimental results. Full article
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26 pages, 3199 KB  
Article
Single Switched Capacitor Battery Balancing System Enhancements
by Mohamed Daowd, Mailier Antoine, Noshin Omar, Peter Van den Bossche and Joeri Van Mierlo
Energies 2013, 6(4), 2149-2174; https://doi.org/10.3390/en6042149 - 18 Apr 2013
Cited by 126 | Viewed by 17237
Abstract
Battery management systems (BMS) are a key element in electric vehicle energy storage systems. The BMS performs several functions concerning to the battery system, its key task being balancing the battery cells. Battery cell unbalancing hampers electric vehicles’ performance, with differing individual cell [...] Read more.
Battery management systems (BMS) are a key element in electric vehicle energy storage systems. The BMS performs several functions concerning to the battery system, its key task being balancing the battery cells. Battery cell unbalancing hampers electric vehicles’ performance, with differing individual cell voltages decreasing the battery pack capacity and cell lifetime, leading to the eventual failure of the total battery system. Quite a lot of cell balancing topologies have been proposed, such as shunt resistor, shuttling capacitor, inductor/transformer based and DC energy converters. The shuttling capacitor balancing systems in particular have not been subject to much research efforts however, due to their perceived low balancing speed and high cost. This paper tries to fill this gap by briefly discussing the shuttling capacitor cell balancing topologies, focusing on the single switched capacitor (SSC) cell balancing and proposing a novel procedure to improve the SSC balancing system performance. This leads to a new control strategy for the SSC system that can decrease the balancing system size, cost, balancing time and that can improve the SSC balancing system efficiency. Full article
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9 pages, 379 KB  
Article
Capacitor Based Battery Balancing System
by Mohamed Daowd, Noshin Omar, Peter Van Den Bossche and Joeri Van Mierlo
World Electr. Veh. J. 2012, 5(2), 385-393; https://doi.org/10.3390/wevj5020385 - 29 Jun 2012
Cited by 20 | Viewed by 1911
Abstract
Battery systems as a vital part of the electrical vehicles are facing major difficulties, the most important matter is the cells unbalancing. The cells unbalancing leads to individual cell voltages differ over time, decreasing the battery pack capacity that consequently will fail of [...] Read more.
Battery systems as a vital part of the electrical vehicles are facing major difficulties, the most important matter is the cells unbalancing. The cells unbalancing leads to individual cell voltages differ over time, decreasing the battery pack capacity that consequently will fail of the total battery system in the long run. In addition, cell equalization acts an important role on the battery life preserving. Several cell balancing topologies have been proposed for battery pack equalization such as; switched shunt resistors, inductor/transformer base, shuttling capacitor and energy converters. Quite a few researches focused the capacitor base cell balancing. This paper is presents a review, comparisons and develop the capacitor based topologies for balancing battery string. With the aid of MATLAB/Simulink® modeling, the switched capacitor topologies have been proposed including circuits, cells balancing simulation, implementations, balancing speed, complexity and system efficiency, as well as, propose a new control strategy for the single switched capacitor. Full article
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