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Open AccessArticle

Compact 20-W GaN Internally Matched Power Amplifier for 2.5 GHz to 6 GHz Jammer Systems

Department of Radio and Information Communications Engineering, Chungnam National University, Daejeon 34134, Korea
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Micromachines 2020, 11(4), 375; https://doi.org/10.3390/mi11040375
Received: 25 February 2020 / Revised: 29 March 2020 / Accepted: 1 April 2020 / Published: 2 April 2020
(This article belongs to the Special Issue Wide Bandgap Based Devices: Design, Fabrication and Applications)
In this paper, we demonstrate a compact 20-W GaN internally matched power amplifier for 2.5 to 6 GHz jammer systems which uses a high dielectric constant substrate, single-layer capacitors, and shunt/series resistors for low-Q matching and low-frequency stabilization. A GaN high-electron-mobility transistor (HEMT) CGH60030D bare die from Wolfspeed was used as an active device, and input/output matching circuits were implemented on two different substrates using a thin-film process, relative dielectric constants of which were 9.8 and 40, respectively. A series resistor of 2.1 Ω was chosen to minimize the high-frequency loss and obtain a flat gain response. For the output matching circuit, double λ/4 shorted stubs were used to supply the drain current and reduce the output impedance variation of the transistor between the low-frequency and high-frequency regions, which also made wideband matching feasible. Single-layer capacitors effectively helped reduce the size of the matching circuit. The fabricated GaN internally matched power amplifier showed a linear gain of about 10.2 dB, and had an output power of 43.3–43.9 dBm (21.4–24.5 W), a power-added efficiency of 33.4–49.7% and a power gain of 6.2–8.3 dB at the continuous-wave output power condition, from 2.5 to 6 GHz. View Full-Text
Keywords: wideband; GaN; HEMT; power amplifier; jammer system wideband; GaN; HEMT; power amplifier; jammer system
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Lee, M.-P.; Kim, S.; Hong, S.-J.; Kim, D.-W. Compact 20-W GaN Internally Matched Power Amplifier for 2.5 GHz to 6 GHz Jammer Systems. Micromachines 2020, 11, 375.

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