Search Results (27)

Directed self-assembly (DSA) of polystyrene-block-poly (methyl methacrylate) (PS-b-PMMA) has garnered substantial interest for semiconductor manufacturing, particularly for fabricating contact holes and vias. However, its application is limited by the low etch selectivity between the PS and PMMA domains. Here, we report an acid-responsive block copolymer, PS-N=CH-PMMA, incorporating a Schiff base (-N=CH-) linkage between the two blocks to impart acid sensitivity. The copolymer is synthesized via aldehyde-terminated PMMA (PMMA-CHO) precursors and is fully compatible with conventional thermal annealing workflows used for PS-b-PMMA. Uniform thin films with vertically oriented cylindrical domains were obtained, which could be directly converted into high-fidelity PS masks through acetic acid immersion without UV exposure. Graphoepitaxial DSA in 193i pre-patterned templates produced shrink-hole patterns with reduced critical dimension (CD) and improved local CD uniformity (LCDU). The shrink-hole CD was tunable by varying PMMA-CHO molecular weights. XPS confirmed selective cleavage of Schiff base linkages at the PS/PMMA interface under acidic conditions, while Ohta–Kawasaki simulations indicated interfacial wetting asymmetry governs etch fidelity and residual layer formation. Pattern transfer into TEOS layers was achieved with minimal CD loss. Overall, the acid-cleavable BCP enables scalable, high-fidelity nanopatterning with improved etch contrast, tunable process windows, and seamless integration into existing PS-b-PMMA lithography platforms. Full article

In this study, we present a cost-effective approach for fabricating nanopores on single-crystal silicon using a silver–alumina–silver (Ag/AAO/Ag) metal–insulator–metal (MIM) structured mask. Self-ordered porous anodic aluminum oxide (AAO) films were prepared via two-step anodization and coated with silver layers on both sides to form the MIM structure. When irradiated with a 532 nm nanosecond laser, the MIM mask excites surface plasmon polaritons (SPPs), resulting in a localized field enhancement that enables the etching of nanopores into the silicon substrate. This method successfully produced nanopores with diameters as small as 50 nm and depths up to 28 nm. The laser-induced SPP-assisted machining significantly enhances the specific surface area of the processed surface, making it promising for applications in catalysis, biosensing, and microcantilever-based devices. For instance, an increased surface area can improve catalytic efficiency by providing more active sites, and enhance sensor sensitivity by amplifying response signals. Compared to conventional lithographic or focused ion beam techniques, this method offers simplicity, low cost, and scalability. The proposed technique demonstrates a practical and efficient route for the large-area subwavelength nanostructuring of silicon surfaces. Full article

Quartz crystal out-of-plane vibration units are critical components of QMEMS devices. However, the fabrication of their 3D sidewall electrode structures presents significant challenges, particularly within ultrafine etched grooves. These challenges seriously limit further miniaturization, which is critical for portable and wearable electronic applications. In this paper, we propose a novel 3D self-masking fabrication strategy that enables the precise formation of sidewall electrodes by using the etched beam structure as a self-aligned pattern transfer medium. Based solely on photolithography and wet etching processes, this approach overcomes the limitations of the conventional shadow mask technique by improving alignment accuracy, process efficiency, and fabrication yields. In addition, a predictive mathematical model was developed to guide process optimization, enabling adaptive and reliable fabrication. Sidewall electrodes were successfully achieved in etched grooves as narrow as 45 μm, closely matching the theoretical predictions. To validate the approach, an ultra-miniaturized out-of-plane vibration unit with a beam spacing of just 150 μm—the narrowest reported to date—was fabricated, representing an 80% reduction compared to previously documented structures. The unit exhibited a repeatability error below 1.13%, confirming the precision and reliability of the proposed fabrication strategy. Full article

This study introduces an enhancement-mode AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) featuring a self-aligned p-GaN gate structure, fabricated using a gate-first process. The key innovation of this work lies in simplifying the fabrication process by utilizing gate metallization for both electrical contact and etching mask functions, enabling precise self-alignment. A highly selective Cl₂/N₂/O₂ inductively coupled plasma (ICP) etching process was optimized to etch the p-GaN layer in the access regions, with a selectivity ratio of 33:1 and minimal damage to the AlGaN barrier. Additionally, a novel, non-annealed ohmic contact formation technique was developed, leveraging ICP etching to create nitrogen vacancies that facilitate contact formation without requiring thermal annealing. This technique streamlines the process by combining ohmic contact formation and mesa isolation into a single lithographic step. Incorporating a SiNx gate dielectric layer led to a 4.5 V threshold voltage shift in the fabricated devices. The resulting devices exhibited improved electrical performance, including a wide gate voltage swing (>10 V), a high on/off current ratio (~10⁷), and clear pinch-off characteristics. These results demonstrate the effectiveness of the proposed fabrication approach, offering significant improvements in process efficiency and manufacturability. Full article

Photothermal materials often prioritize solar absorption while neglecting thermal radiation losses, which diminishes thermal radiation conversion efficiency. This study addresses this gap by introducing a germanium (Ge) subwavelength structure (SWS) designed to optimize both solar absorption and infrared emissivity. Using a self-masked reactive ion etching (RIE) technique, we achieved a peak absorption of 98.8% within the 300 nm to 1800 nm range, with an infrared emissivity as low as 0.32. Under solar illumination of 1000 W/m², the structure’s temperature increased by 50 °C, generating a heating power of 800 W/m². Additionally, it demonstrated good mechanical and thermal stability at high temperatures and possessed a hydrophobic angle of 132°, ensuring effective self-cleaning. These characteristics make the Ge SWS suitable for application in solar panels, displays, sensors, and other optoelectronic devices. Full article

Black GaAs nanotip arrays (NTs) with 3300 nm lengths were fabricated via self-masked plasma etching. We show, both experimentally and numerically, that these NTs, with three gradient refractive index layers, effectively suppress Fresnel reflections at the air–GaAs interface over a broad range of wavelengths. These NTs exhibit exceptional UV-Vis light absorption (up to 99%) and maintain high NIR absorption (33–60%) compared to bare GaAs. Moreover, possessing a graded layer with a low refractive index (n = 1.01 to 1.12), they achieve angular and polarization-independent antireflection properties exceeding 80° at 632.8 nm, aligning with perfect antireflective coating theory predictions. This approach is anticipated to enhance the performance of optoelectronic devices across a wide range of applications. Full article

Glass microlens arrays (MLAs) have tremendous prospects in the fields of optical communication, sensing and high-sensitivity imaging for their excellent optical properties, high mechanical robustness and physicochemical stability. So far, glass MLAs are primarily fabricated using femtosecond laser modification assisted etching, in which the preparation procedure is time-consuming, with each concave-shaped microlens being processed using a femtosecond laser point by point. In this paper, a new method is proposed for implementing large-scale glass MLAs using glass particle sintering with the assistance of ultraviolet (UV) lithography. The glass particles are dispersed into the photoresist at first, and then immobilized as large-scaled micropillar arrays on quartz glass substrate using UV lithographing. Subsequently, the solidified photoresist is debinded and the glass particles are melted by means of sintering. By controlling the sintering conditions, the convex microlens will be self-assembled, attributed to the surface tension of the molten glass particles. Finally, MLAs with different focal lengths (0.12 to 0.2 mm) are successfully fabricated by utilizing different lithography masks. Meanwhile, we also present the optimization of the sintering parameter for eliminating the bubbles in the microlenses. The main factors that affect the focal length of the microlens and the image performance of the MLAs have been studied in detail. Full article

Photosensitive glasses for radiation-induced 3D microstructuring, due to their optical transparency and thermal, mechanical, and chemical resistance, enable the use of new strategies for numerous microscale applications, ranging from optics to biomedical systems. In this context, we investigated the plasma etching of photosensitive glasses after their exposure and compared it to the established wet chemical etching method, which offers new degrees of freedom in microstructuring control and microsystem fabrication. A CF₄/H₂ etching gas mixture with a constant volumetric flow of 30 sccm and a variable H₂ concentration from 0% to 40% was utilized for plasma-based etching, while for wet chemical etching, diluted hydrofluoric acid (1% ≤ c_HF ≤ 20%) was used. Therefore, both etching processes are based on a chemical etching attack involving fluorine ions. A key result is the observed reversion of the etch selectivity between the initial glassy and partially crystallized parts that evolve after UV exposure and thermal treatment. The crystallized parts were found to be 27 times more soluble than the unexposed glass parts during wet chemical etching. During the plasma etching process, the glassy components dissolve approximately 2.5 times faster than the partially crystalline components. Unlike wet chemical etching, the surfaces of plasma etched photostructured samples showed cone- and truncated-cone-shaped topographies, which supposedly resulted from self-masking effects during plasma etching, as well as a distinct physical contribution from the plasma etching process. The influences of various water species on the etching behaviors of the homogeneous glass and partially crystallized material are discussed based on FTIR-ATR and in relation to the respective etch rates and SNMS measurements. Full article

When Ag film is sputtered onto polystyrene (PS) spheres, the curved Ag nanocaps form with scattered Ag nanoparticles along the brim of the Ag nanocap. Ion etching results in parallel PS nanorods due to the masking effects of the scattered Ag nanoparticles when the Ag cap array is transferred to another substrate with the top down. The highly polarized SERS substrate of random working domains composed of parallel nanorods is prepared when another 5 nm film is deposited. The nanorod diameters range from 10 nm to 20 nm, depending on the sizes of the masking Ag nanoparticles prepared by the magnetron control system and the ion etching process. Compared with other techniques, our nanorods have the advantages of highly ordered patterns in each domain, which show the excellent behavior of the polarized SERS for all PS spheres. This polarized SERS substrate is used to detect thiram with a concentration as low as 10⁻⁹ M when the background noise is successfully removed by a self-reference technique. Full article

Optically anisotropic materials were produced via colloidal lithography and characterized using scanning electronic microscopy (SEM), confocal microscopy, and polarimetry. A compact hexagonal array mask composed of silica sub-micron particles was fabricated via the Langmuir–Blodgett self-assembly technique. Subsequently, the mask pattern was transferred onto monocrystalline silicon and commercial glass substrates using ion beam etching in a vacuum. Varying the azimuthal angle while etching at oblique incidence carved screw-like shaped pillars into the substrates, resulting in heterochiral structures depending on the azimuthal angle direction. To enhance the material’s optical properties through plasmon resonance, gold films were deposited onto the pillars. Polarimetric measurements were realized at normal and oblique incidences, showing that the etching directions have a clear influence on the value of the linear birefringence and linear dichroism. The polarimetric properties, especially the chiroptical responses, increased with the increase in the angle of incidence. Full article

As the process complexity has been increased to overcome challenges in plasma etching, individual control of internal plasma parameters for process optimization has attracted attention. This study investigated the individual contribution of internal parameters, the ion energy and flux, on high-aspect ratio SiO${}_2$ etching characteristics for various trench widths in a dual-frequency capacitively coupled plasma system with Ar/C${}_4$F${}_8$ gases. We established an individual control window of ion flux and energy by adjusting dual-frequency power sources and measuring the electron density and self-bias voltage. We separately varied the ion flux and energy with the same ratio from the reference condition and found that the increase in ion energy shows higher etching rate enhancement than that in the ion flux with the same increase ratio in a 200 nm pattern width. Based on a volume-averaged plasma model analysis, the weak contribution of the ion flux results from the increase in heavy radicals, which is inevitably accompanied with the increase in the ion flux and forms a fluorocarbon film, preventing etching. At the 60 nm pattern width, the etching stops at the reference condition and it remains despite increasing ion energy, which implies the surface charging-induced etching stops. The etching, however, slightly increased with the increasing ion flux from the reference condition, revealing the surface charge removal accompanied with conducting fluorocarbon film formation by heavy radicals. In addition, the entrance width of an amorphous carbon layer (ACL) mask enlarges with increasing ion energy, whereas it relatively remains constant with that of ion energy. These findings can be utilized to optimize the SiO${}_2$ etching process in high-aspect ratio etching applications. Full article

This work investigates a self-masking technology for roughening the surface of light-emitting diodes (LEDs). The carbonized photoresist with a naturally nano/micro-textured rough surface was used as a mask layer. After growing the Si₃N₄ passivation layer on LEDs, the texture pattern of the mask layer was transferred to the surface of the passivation layer via reactive ion beam (RIE) dry etching, resulting in LEDs with nano-textured surfaces. This nano-textured surface achieved by self-masking technology can alleviate the total internal reflection at the top interface and enhance light scattering, thereby improving the light extraction efficiency. As a result, the wall-plug efficiency (WPE) and external quantum efficiency (EQE) of rough-surface LEDs reached 53.9% and 58.8% at 60 mA, respectively, which were improved by 10.3% and 10.5% compared to that of the flat-surface Si₃N₄-passivated LED. Additionally, at the same peak, both LEDs emit a wavelength of 451 nm at 350 mA. There is also almost no difference between the I–V characteristics of LEDs before and after roughening. The proposed self-masking surface roughening technology provides a strategy for LEE enhancement that is both cost-effective and compatible with conventional fabrication processes. Full article

In this paper, polystyrene microspheres were firstly prepared by seeded emulsion polymerization, and the uniform monolayer of polystyrene microspheres was prepared on the substrate by the dipping method. Then, polystyrene monolayer film was used as a mask and a low dimensional array structure of gold was prepared by bottom-up self-assembly process. After that, the method of solution etching and annealing was used, and the gold nanoparticle array was post-processed. As a result, gold nanoparticles were recrystallized, with an average diameter of about 50 nm. Subsequently, the semiconductor process was adopted, with focused ion beams induced deposition and electron beam evaporation, and single electron transistors were fabricated, based on self-assembled gold nanoparticles. Finally, the devices were fixed in a liquid helium cryostat and Coulomb blockade was observed at 320 mK. It is a novel fabrication of a single electron transistor based on gold nanoparticle array template and prepared with polystyrene nanospheres. Full article

Daily sleep monitoring is limited by the needs for specialized equipment and experts. This study combines a mask-shaped triboelectric nanogenerator (M-TENG) and machine learning for facile daily sleep monitoring without the specialized equipment or experts. The fabricated M-TENG demonstrates its excellent ability to detect respiration, even distinguishing oral and nasal breath. To increase the pressure sensitivity of the M-TENG, the reactive ion etching is conducted with different tilted angles. By investigating each surface morphology of the polytetrafluoroethylene films according to the reactive ion etching with different tilted angles, the tilted angle is optimized with the angle of 60° and the pressure sensitivity is increased by 5.8 times. The M-TENG can also detect changes in the angle of head and snoring. Various sleep stages can be classified by their distinctive electrical outputs, with the aid of a machine learning approach. As a result, a high averaged-classification accuracy of 87.17% is achieved for each sleep stage. Experimental results demonstrate that the proposed combination can be utilized to monitor the sleep stage in order to provide an aid for self-awareness of sleep disorders. Considering these results, the M-TENG and machine learning approach is expected to be utilized as a smart sleep monitoring system in near future. Full article

Surface-enhanced Raman spectroscopy (SERS) has long been an ultrasensitive technique for trace molecule detection. However, the development of a sensitive, stable, and reproducible SERS substrate is still a challenge for practical applications. Here, we demonstrate a cost-effective, centimeter-sized, and highly reproducible SERS substrate using the nanosphere lithography technique. It consists of a hexagonally packed Ag metasurface on a SiO₂/Au/Si substrate. A seconds-lasting etching process of a self-assembled nanosphere mask manipulates the geometry of the deposited Ag metasurface on the SiO₂/Au/Si substrate, which attains the wavelength matching between the optical absorbance of the Ag/SiO₂/Au/Si substrate and the excitation laser wavelength as well as the enhancement of Raman signals. By spin-coating a thin layer of graphene oxide on the substrate, a SERS performance with 1.1 × 10⁵ analytical enhancement factor and a limit of detection of 10⁻⁹ M for melamine is achieved. Experimental results reveal that our proposed strategy could provide a promising platform for SERS-based rapid trace detection in food safety control and environmental monitoring. Full article