Next Article in Journal
Influence of Long Milling Time on the Electrical Resistivity of Nanocrystalline Ni2MnSn Heusler Alloy Obtained by Mechanosynthesis
Previous Article in Journal
Preparation of Thermochromic Vanadium Dioxide Films Assisted by Machine Learning
 
 
Font Type:
Arial Georgia Verdana
Font Size:
Aa Aa Aa
Line Spacing:
Column Width:
Background:
Article

Plasma-Etched Black GaAs Nanoarrays with Gradient Refractive Index Profile for Broadband, Omnidirectional, and Polarization-Independent Antireflection

1
Department of Mechanical Engineering, National Chin-Yi University of Technology, Taichung 411030, Taiwan
2
Department of Electro-Optical Engineering, National Taipei University of Technology, Taipei 106, Taiwan
3
Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan
4
International Graduate Program of Molecular Science and Technology, National Taiwan University (NTU-MST), Taipei 10617, Taiwan
5
Molecular Science and Technology Program, Taiwan International Graduate Program (TIGP), Academia Sinica, Taipei 11529, Taiwan
6
Department of Physics, National Taiwan University, Taipei 10617, Taiwan
7
Center of Atomic Initiative for New Materials, National Taiwan University, Taipei 10617, Taiwan
8
Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan
*
Author to whom correspondence should be addressed.
Nanomaterials 2024, 14(13), 1154; https://doi.org/10.3390/nano14131154
Submission received: 4 June 2024 / Revised: 2 July 2024 / Accepted: 3 July 2024 / Published: 6 July 2024

Abstract

Black GaAs nanotip arrays (NTs) with 3300 nm lengths were fabricated via self-masked plasma etching. We show, both experimentally and numerically, that these NTs, with three gradient refractive index layers, effectively suppress Fresnel reflections at the air–GaAs interface over a broad range of wavelengths. These NTs exhibit exceptional UV-Vis light absorption (up to 99%) and maintain high NIR absorption (33–60%) compared to bare GaAs. Moreover, possessing a graded layer with a low refractive index (n = 1.01 to 1.12), they achieve angular and polarization-independent antireflection properties exceeding 80° at 632.8 nm, aligning with perfect antireflective coating theory predictions. This approach is anticipated to enhance the performance of optoelectronic devices across a wide range of applications.
Keywords: black GaAs NTs; gradient refractive index; polarization-independent antireflection black GaAs NTs; gradient refractive index; polarization-independent antireflection

Share and Cite

MDPI and ACS Style

Huang, Y.-F.; Jen, Y.-J.; Modak, V.A.; Chen, L.-C.; Chen, K.-H. Plasma-Etched Black GaAs Nanoarrays with Gradient Refractive Index Profile for Broadband, Omnidirectional, and Polarization-Independent Antireflection. Nanomaterials 2024, 14, 1154. https://doi.org/10.3390/nano14131154

AMA Style

Huang Y-F, Jen Y-J, Modak VA, Chen L-C, Chen K-H. Plasma-Etched Black GaAs Nanoarrays with Gradient Refractive Index Profile for Broadband, Omnidirectional, and Polarization-Independent Antireflection. Nanomaterials. 2024; 14(13):1154. https://doi.org/10.3390/nano14131154

Chicago/Turabian Style

Huang, Yi-Fan, Yi-Jun Jen, Varad A. Modak, Li-Chyong Chen, and Kuei-Hsien Chen. 2024. "Plasma-Etched Black GaAs Nanoarrays with Gradient Refractive Index Profile for Broadband, Omnidirectional, and Polarization-Independent Antireflection" Nanomaterials 14, no. 13: 1154. https://doi.org/10.3390/nano14131154

APA Style

Huang, Y.-F., Jen, Y.-J., Modak, V. A., Chen, L.-C., & Chen, K.-H. (2024). Plasma-Etched Black GaAs Nanoarrays with Gradient Refractive Index Profile for Broadband, Omnidirectional, and Polarization-Independent Antireflection. Nanomaterials, 14(13), 1154. https://doi.org/10.3390/nano14131154

Note that from the first issue of 2016, this journal uses article numbers instead of page numbers. See further details here.

Article Metrics

Back to TopTop