Search Results (35)

In this study, an inorganic multilayer barrier film was fabricated on the polyethylene naphthalate (PEN) substrate, which was composed of a SiO₂ layer prepared by inductively coupled plasma chemical vapor deposition (ICP-CVD) and a Al₂O₃/ZnO nanolaminate produced by plasma-enhanced atomic layer deposition (PEALD). The multilayer composite film with a structure of 50 nm SiO₂ + (4.5 nm Al₂O₃/6 nm ZnO) × 4 has excellent optical transmittance (88.1%) and extremely low water vapor permeability (3.3 × 10⁻⁵ g/m²/day, 38 °C, 90% RH), indicating the cooperation of the two advanced film growth methods. The results suggest that the defects of the SiO₂ layer prepared by ICP-CVD were effectively repaired by the PEALD layer, which has excellent defect coverage. And Al₂O₃/ZnO nanolaminates have advantages over single-layer Al₂O₃ due to their complex diffusion pathways. The multilayer barrier film offers potential for encapsulating organic electronic devices that require a longer lifespan. Full article

In this study, a boron-doped diamond nanowire array (BDD-NWA)-based electrode is prepared by using a microwave plasma chemical vapor deposition system and treated with inductively coupled plasma reactive ion etching. The BDD-NWA electrode is used for trace detection of methylene blue, which has a wide linear range of 0.04–10 μM and a low detection limit of 0.72 nM. Both the superhydrophilicity (contact angle ~0°) and the dense nanowire array’s structure after the etching process improve the sensitivity of the electrochemical detection compared to the pristine BDD. In addition, the electrode shows great repeatability (peak current fluctuation range of −3.3% to 2.9% for five detection/cleaning cycles) and stability (peak current fluctuation range of −5.3% to 6.3% after boiling) due to the unique properties of diamonds (mechanical and chemical stability). Moreover, the BDD-NWA electrode achieves satisfactory recoveries (93.8%–107.5%) and real-time monitoring in tap water. Full article

Carbon deposits consisting of vertically oriented multilayer graphene sheets on metallic foils represent an interesting alternative to activated carbon in electrical and electrochemical devices such as super-capacitors because of the superior electrical conductivity of graphene and huge surface–mass ratio. The graphene sheets were deposited on cobalt foils by plasma-enhanced chemical vapor deposition using propane as the carbon precursor. Plasma was sustained by an inductively coupled radiofrequency discharge in the H mode at a power of 500 W and a propane pressure of 17 Pa. The precursor effectively dissociated in plasma conditions and enabled the growth of porous films consisting of multilayer graphene sheets. The deposition rate varied with time and peaked at 100 nm/s. The evolution of surface wettability was determined by the sessile drop method. The untreated substrates were moderately hydrophobic at a water contact angle of about 110°. The contact angle dropped to about 50° after plasma treatment for less than a second and increased monotonously thereafter. The maximal contact angle of 130° appeared at a treatment time of about 30 s. Thereafter, it slowly decreased, with a prolonged deposition time. The evolution of the wettability was explained by surface composition and morphology. A brief treatment with oxygen plasma enabled a super-hydrophilic surface finish of the films consisting of multilayer graphene sheets. Full article

Industrial-grade optical semiconductor films have attracted considerable research interest because of their potential for wafer-scale mass deposition and direct integration with other optoelectronic wafers. The development of optical thin-film processes that are compatible with complementary metal-oxide-semiconductor (CMOS) processes will be beneficial for the improvement of chip integration. In this study, a multilayer periodically structured optical film containing Fabry–Perot cavity was designed, utilizing nine pairs of SiN/SiO₂ dielectrics. Subsequently, the multilayer films were deposited on Si substrates through the inductively coupled plasma chemical vapor deposition (ICPCVD) technique, maintaining a low temperature of 80 °C. The prepared films exhibit narrow bandpass characteristics with a maximum peak transmittance of 76% at 690 nm. Scanning electron microscopy (SEM) shows that the film structure has good periodicity. In addition, when the optical films are exposed to p/s polarized light at different angles of incidence, the cavity mode of the film undergoes a blueshift, which greatly affects the color appearance of the film. As the temperature rises, the cavity mode undergoes a gradual redshift, while the full width at half maximum (FWHM) and quality factor remain relatively constant. Full article

Occupational exposure to airborne nanoparticles in semiconductor-manufacturing facilities is of growing concern. Currently, comprehensive information regarding atmospheric concentrations, potential origins, and the physical and chemical properties of nanoparticles in these industrial settings is lacking. This study investigated the occurrence of airborne nanoparticles within a semiconductor-research and -manufacturing facility, during both routine operation and maintenance activities. A Scanning Mobility Particle Sizer was used to monitor size-resolved airborne-nanoparticle number concentrations spanning the range of 6 to 220 nm. Breathing zone filter samples were also collected during maintenance processes and underwent subsequent analyses via Transmission Electron Microscopy and Inductively Coupled Plasma Mass Spectrometry, to discover the size, morphology, and chemical composition of the observed nanoparticles. The findings reveal low levels of airborne nanoparticles during routine operations, but maintenance tasks resulted in substantial concentration surges particularly for plasma-enhanced chemical vapor deposition tools with concentrations up to 11,800 particles/cm³. More than 80% of observed particles were smaller than 30 nm. These smallest particles were predominately composed of metals such as iron, nickel, and copper. Moreover, larger particles above 100 nm were also identified, comprising process-related materials such as silicon and indium. Comparative assessment against established mass-based exposure limits did not yield any exceedances. Current exposure limits do not typically consider size though, and the preponderance of small nanoparticles (<30 nm) would warrant a more size-differentiated exposure-risk assessment. Full article

The color reflector with multiple-layer thin film scheme has attracted much attention because of the potential for massive production by wafer-scale deposition and the possibility to integrate with photonics (semiconductor) devices. Here, an angle-insensitive green reflector with a simple multilayer dielectric thin film structure was reported, with predicted chromatic coordinates based on CIE 1931 standard. The SiN/SiO₂ multilayer thin film stack, including a special silicon-rich nitride material with ultrahigh refractive index, was grown alternatively by an inductively coupled plasma chemical vapor deposition (ICPCVD) system at a low stage temperature of 80 °C. The green reflector showed a maximum reflectivity of 73% around 561 nm with a full width at half maximum (FWHM) of 87 nm in the visible wavelength range, which contributed significantly to its color appearance. The measurement by an angle-resolved spectrometer under the illumination of p/s-polarized light wave with a variable angle of incidence indicated that the reflectance spectrum blue-shifted slightly with the increasing of incident angle such that the green color could be kept. Full article

In the era of the Internet of Things, various electronics play an important role in information interaction, in which the power supply is an urgent problem to be solved. Triboelectric nanogenerator (TENG) is an emerging mechanical energy harvesting technology that can serve as a power source for electronics, which is developing towards high performance, miniaturization and integration. Herein, the advanced micro-nano manufacturing technologies are systematically reviewed for TENGs. First, film preparation such as physical vapor deposition, chemical vapor deposition, electrochemical deposition, electrospinning and screen printing for triboelectric layers are introduced and discussed. Then, surface processing, such as soft lithography, laser ablation, inductively coupled plasma and nanoimprint for micro-nano structures on the surface of triboelectric layers are also introduced and discussed. In addition, micro-electromechanical system fabrication for TENG devices such as acoustic and vibration sensors, is introduced, and their current challenges are analyzed. Finally, the challenges of the advanced micro-nano manufacturing technologies for the TENGs are systematically summarized, and further development is prospected. Full article

Stability of advanced functional materials subjected to extreme conditions involving ion bombardment, radiation, or reactive chemicals is crucial for diverse applications. Here we demonstrate the excellent stability of wafer-scale thin films of vertically aligned hexagonal BN nanosheets (hBNNS) exposed to high-energy ions and reactive atomic oxygen representative of extreme conditions in space exploration and other applications. The hBNNS are fabricated catalyst-free on wafer-scale silicon, stainless steel, copper and glass panels at a lower temperature of 400 °C by inductively coupled plasma (ICP) assisted chemical vapor deposition (CVD) and subsequently characterized. The resistance of BNNS to high-energy ions was tested by immersing the samples into the plasma plume at the anode of a 150 W Hall Effect Thruster with BNNS films facing Xenon ions, revealing that the etching rate of BNNS is 20 times less than for a single-crystalline silicon wafer. Additionally, using O₂/Ar/H₂ plasmas to simulate the low Earth orbit (LEO) environment, it is demonstrated that the simulated plasma had very weak influence on the hBNNS surface structure and thickness. These results validate the strong potential of BNNS films for applications as protective, thermally conductive and insulating layers for spacecrafts, electric plasma satellite thrusters and semiconductor optoelectronic devices. Full article

SiO₂ is one of the most widely used dielectric materials in optical and electronic devices. The Josephson voltage standard (JVS) chip fabrication process has rigorous requirements for the deposition temperature and step-coverage profiles of the SiO₂ insulation layer. In this study, we deposited high-quality SiO₂ insulation films at 60 °C using inductively coupled plasma-chemical vapor deposition (ICP-CVD) to fulfill these requirements and fabricate JVS chips simultaneously. SiO₂ films have a high density, low compressive stress, and a sloped sidewall profile over the vertical junction steps. The sidewall profiles over the vertical junction steps can be adjusted by changing the radio frequency (RF) power, ICP power, and chamber pressure. The effects of sputtering etch and sloped step coverage were enhanced when the RF power was increased. The anisotropy ratio of the deposition rate between the sidewall and the bottom of the film was lower, and the sloped step coverage effect was enhanced when the ICP power was increased, or the deposition pressure was decreased. The effects of the RF power on the stress, density, roughness, and breakdown voltage of the SiO₂ films were also investigated. Despite increased compressive stress with increasing RF power, the film stress was still low and within acceptable limits in the device. The films deposited under optimized conditions exhibited improved densities in the Fourier transform infrared spectra, buffered oxide etch rate, and breakdown voltage measurements compared with the films deposited without RF power. The roughness of the film also decreased. The step-coverage profile of the insulation layer prepared under optimized conditions was enhanced in the junction and bottom electrode regions; additionally, the performance of the device was optimized. This study holds immense significance for increasing the number of junctions in future devices. Full article

We evaluated the power generation characteristics of a polymer electrolyte fuel cell (PEFC) composed of Pt-supported carbon nanowalls (CNWs) and a microporous layer (MPL) of carbon black on carbon paper (CP) as catalyst support materials. CNWs, standing vertically on highly crystallizing graphene sheets, were synthesized on an MPL/CP by plasma-enhanced chemical vapor deposition (PECVD) using inductively coupled plasma (ICP). Pt nanoparticles were supported on the CNW surface using the liquid-phase reduction method. The three types of voltage loss, namely those due to activated polarization, resistance polarization, and diffusion polarization, are discussed for the power generation characteristics of the PEFC using the Pt/CNWs/MPL/CP. The relationship between the height or gap area of the CNWs and the voltage loss of the PEFC is demonstrated, whereby the CNW height increased with the extension of growth time. The three-phase interface area increased with the increase in the CNW height, resulting in mitigation of the loss due to activated polarization. The gap area of the CNWs varied when changing the CH₄/H₂ gas ratio. The loss due to diffusion polarization was reduced by enlarging the gap area, due to the increased diffusion of fuel gas and discharge of water. The secondary growth of the CNWs caused the three-phase interface area to decrease as a result of platinum aggregation, impedance of the supply of ionomer dispersion solution to the bottom of the CNWs, and inhibition of fuel gas and water diffusion, which led to the loss of activated and diffuse polarizations. The voltage losses can be mitigated by increasing the height of CNWs while avoiding secondary growth. Full article

In this study, a TiO₂-CNT-Ag ternary composite film was successfully synthesized using the plasma-enhanced chemical vapor deposition method by simultaneously feeding a carbon nanotube (CNT)/Ag suspension and titanium tetraisopropoxide gas. The prepared TiO₂-CNT-Ag film was characterized by scanning electron microscopy, transmission electron microscopy, energy-dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, X-ray diffraction, and ultraviolet-visible spectroscopy. Moreover, the Ag/Ti ratio of the film was confirmed using an inductivity-coupled plasma optical emission spectrometer. The performance of the TiO₂-composite film for the degradation of rhodamine 6G under simulated solar light irradiation was evaluated. The rate constant of the prepared TiO₂-CNT-Ag for rhodamine 6G degradation was approximately 1.8 times greater than that of prepared TiO₂. This result indicates that the addition of CNT and Ag significantly improved the photocatalytic activity of the prepared films. Full article

A key common problem for vertical few-layer graphene (VFLG) applications in electronic devices is the solution to grow on substrates. In this study, four kinds of substrates (silicon, stainless-steel, quartz and carbon-cloth) were examined to understand the mechanism of the nucleation and growth of VFLG by using the inductively-coupled plasma-enhanced chemical vapor deposition (ICPCVD) method. The theoretical and experimental results show that the initial nucleation of VFLG was influenced by the properties of the substrates. Surface energy and catalysis of substrates had a significant effect on controlling nucleation density and nucleation rate of VFLG at the initial growth stage. The quality of the VFLG sheet rarely had a relationship with this kind of substrate and was prone to being influenced by growth conditions. The characterization of conductivity and field emissions for a single VFLG were examined in order to understand the influence of substrates on the electrical property. The results showed that there was little difference in the conductivity of the VFLG sheet grown on the four substrates, while the interfacial contact resistance of VFLG on the four substrates showed a tremendous difference due to the different properties of said substrates. Therefore, the field emission characterization of the VFLG sheet grown on stainless-steel substrate was the best, with the maximum emission current of 35 µA at a 160 V/μm electrostatic field. This finding highlights the controllable interface of between VFLG and substrates as an important issue for electrical application. Full article

Amorphous hydrogenated silicon carbonitride films were synthesized on Si(100), Ge(111), and fused silica substrates using the inductively coupled plasma chemical vapor deposition technique. 1,1,3,3-tetramethyldisilazane (TMDSN) was used as a single-source precursor. The effect of the precursor’s pressure in the initial gas mixture, the substrate temperature, the plasma power, and the flow rate of nitrogen gas as an additional reagent on the film growth rate, element composition, chemical bonding, wettability of film surface, and the optical and mechanical properties of a-SiC_xN_y:H films was investigated. In situ diagnostic studies of the gas phase have been performed by optical emission spectroscopy during the film deposition process. The long-term stability of films was studied over a period of 375 days. Fourier-transform infrared (FTIR) and X-ray energy dispersive spectroscopy (EDX), and wettability measurements elucidated the oxidation of the SiC_xN_y:H films deposited using TMDSN + N₂ mixture. Films obtained from a mixture with argon had high stability and maintained the stability of element composition after long-term storage in ambient air. Full article

The suitability of GaN PCSSs (photoconductive semiconductor switches) as high voltage switches (>50 kV) was studied using a variety of commercially available semi-insulating GaN wafers as the base material. Analysis revealed that the wafers’ physical properties were noticeably diverse, mainly depending on the producer. High Voltage PCSSs were fabricated in both vertical and lateral geometry with various contacts, ohmic (Ti/Al/Ni/Au or Ni/Au), with and without a conductive n-GaN or p-type layer grown by metal-organic chemical vapor deposition. Inductively coupled plasma (ICP) reactive ion etching (RIE) was used to form a mesa structure to reduce field enhancements allowing for a higher field to be applied before electrical breakdown. The length of the active region was also varied from a 3 mm gap spacing to a 600 µm gap spacing. The shorter gap spacing supports higher electric fields since the number of macro defects within the device’s active region is reduced. Such defects are common in hydride vapor phase epitaxy grown samples and are likely one of the chief causes for electrical breakdown at field levels below the bulk breakdown field of GaN. Finally, the switching behavior of PCSS devices was tested using a pulsed, high voltage testbed and triggered by an Nd:YAG laser. The best GaN PCSS fabricated using a 600 µm gap spacing, and a mesa structure demonstrated a breakdown field strength as high as ~260 kV/cm. Full article

Chemical Vapor Deposition (CVD) with its plasma-enhanced variation (PECVD) is a mighty instrument in the toolbox of surface refinement to cover it with a layer with very even thickness. Remarkable the lateral and vertical conformity which is second to none. Originating from the evaporation of elements, this was soon applied to deposit compound layers by simultaneous evaporation of two or three elemental sources and today, CVD is rather applied for vaporous reactants, whereas the evaporation of solid sources has almost completely shifted to epitaxial processes with even lower deposition rates but growth which is adapted to the crystalline substrate. CVD means first breaking of chemical bonds which is followed by an atomic reorientation. As result, a new compound has been generated. Breaking of bonds requires energy, i.e., heat. Therefore, it was a giant step forward to use plasmas for this rate-limiting step. In most cases, the maximum temperature could be significantly reduced, and eventually, also organic compounds moved into the preparative focus. Even molecules with saturated bonds (CH${}_4$) were subjected to plasmas—and the result was diamond! In this article, some of these strategies are portrayed. One issue is the variety of reaction paths which can happen in a low-pressure plasma. It can act as a source for deposition and etching which turn out to be two sides of the same medal. Therefore, the view is directed to the reasons for this behavior. The advantages and disadvantages of three of the widest-spread types, namely microwave-driven plasmas and the two types of radio frequency-driven plasmas denoted Capacitively-Coupled Plasmas (CCPs) and Inductively-Coupled Plasmas (ICPs) are described. The view is also directed towards the surface analytics of the deposited layers—a very delicate issue because carbon is the most prominent atom to form multiple bonds and branched polymers which causes multifold reaction paths in almost all cases. Purification of a mixture of volatile compounds is not at all an easy task, but it is impossible for solids. Therefore, the characterization of the film properties is often more orientated towards typical surface properties, e.g., hydrophobicity, or dielectric strength instead of chemical parameters, e.g., certain spectra which characterize the purity (infrared or Raman). Besides diamond and Carbon Nano Tubes, CNTs, one of the polymers which exhibit an almost threadlike character is poly-pxylylene, commercially denoted parylene, which has turned out a film with outstanding properties when compared to other synthetics. Therefore, CVD deposition of parylene is making inroads in several technical fields. Even applications demanding tight requirements on coating quality, like gate dielectrics for semiconductor industry and semi-permeable layers for drug eluting implants in medical science, are coming within its purview. Plasma-enhancement of chemical vapor deposition has opened the window for coatings with remarkable surface qualities. In the case of diamond and CNTs, their purity can be proven by spectroscopic methods. In all the other cases, quantitative measurements of other parameters of bulk or surface parameters, resp., are more appropriate to describe and to evaluate the quality of the coatings. Full article