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Keywords = high temperature co-fired ceramics (HTCC)

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24 pages, 7719 KiB  
Article
All-Ceramic Fiber Fabry–Perot Cavity High-Temperature Pulsating Pressure Sensor Based on HTCC
by Xiangcong Xu, Fei Wang, Guoqing Han, Huiyi Tang, Wanfeng Zhou, Xiaohua Lei and Xianming Liu
Sensors 2025, 25(12), 3678; https://doi.org/10.3390/s25123678 - 12 Jun 2025
Viewed by 563
Abstract
In the aerospace, energy and nuclear energy sectors, dynamic pressure measurement of power equipment and pressure vessels in high-temperature environments is critical for validating design, manufacturing processes and operational condition monitoring. The existing electric sensors are resistant to temperature. It is difficult to [...] Read more.
In the aerospace, energy and nuclear energy sectors, dynamic pressure measurement of power equipment and pressure vessels in high-temperature environments is critical for validating design, manufacturing processes and operational condition monitoring. The existing electric sensors are resistant to temperature. It is difficult to meet the pressure measurement requirements of high temperature and high-frequency responses. In this paper, combining the material properties of high-temperature co-fired ceramics (HTCC) with the structural characteristics of Fabry–Perot, an all-ceramic fiber-optic Fabry–Perot high-temperature pulsating pressure sensor based on a HTCC pressure- sensing diaphragm and ceramic high-temperature sintering process, is proposed. Experimental results show that in the pressure range of 6 MPa, the static pressure sensitivity of the sensor is 1.30 nm/MPa, and the linear goodness of fit reaches 0.99913. The dynamic response frequency of the sensor reaches 598.5 kHz. The survival time at high temperature of 800 °C is more than 80 h. The sensitivity to temperature is 0.00475 nm/°C. Full article
(This article belongs to the Special Issue Advances in Optical Fiber-Based Sensors)
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12 pages, 3646 KiB  
Article
Study on Tungsten Metallization and Interfacial Bonding of Silicon Nitride High-Temperature Co-Fired Ceramic Substrates
by Ling-Feng Wang, Zhe Li, Bo-An Zhou, Yu-Sen Duan, Ning Liu and Jing-Xian Zhang
Materials 2023, 16(7), 2937; https://doi.org/10.3390/ma16072937 - 6 Apr 2023
Cited by 5 | Viewed by 3134
Abstract
For the first time, Si3N4 HTCC has been prepared using W as the metal phase by high-temperature co-firing (1830 °C/600 KPa/2 h) as a potential substrate candidate in electronic applications. It was discovered that the addition of Si3N [...] Read more.
For the first time, Si3N4 HTCC has been prepared using W as the metal phase by high-temperature co-firing (1830 °C/600 KPa/2 h) as a potential substrate candidate in electronic applications. It was discovered that the addition of Si3N4 to the W paste has a significant impact on thermal expansion coefficient matching and dissolution wetting. As the Si3N4 content increased from 0 to 27.23 vol%, the adhesion strength of W increased continuously from 2.83 kgf/mm2 to 7.04 kgf/mm2. The interfacial bonding of the Si3N4 ceramic and the conduction layer was discussed. SEM analysis confirmed that the interface between Si3N4 and W exhibited an interlocking structure. TEM, HRTEM and XRD indicated the formation of W2C and W5Si3 due to the interface reactions of W with residual carbon and Si3N4, respectively, which contributed to the reactive wetting and good adhesion strength between the interface. Suitable amounts of Si3N4 powder and great interfacial bonding were the main reasons for the tough interfacial matching between the Si3N4 ceramic and the conduction layer. Full article
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11 pages, 6391 KiB  
Article
A Microwave Pressure Sensor Loaded with Complementary Split Ring Resonator for High-Temperature Applications
by Libo Yang, Hairong Kou, Xiaoli Wang, Xiaoyong Zhang, Zhenzhen Shang, Junbing Shi, Guanghua Zhang and Zhiguo Gui
Micromachines 2023, 14(3), 635; https://doi.org/10.3390/mi14030635 - 10 Mar 2023
Cited by 11 | Viewed by 2507
Abstract
A passive substrate integrated waveguide (SIW) sensor based on the complementary split ring resonator (CSRR) is presented for pressure detection in high-temperature environments. The sensor pressure sensing mechanism is described through circuit analysis and the electromagnetic coupling principle. The pressure sensor is modeled [...] Read more.
A passive substrate integrated waveguide (SIW) sensor based on the complementary split ring resonator (CSRR) is presented for pressure detection in high-temperature environments. The sensor pressure sensing mechanism is described through circuit analysis and the electromagnetic coupling principle. The pressure sensor is modeled in high frequency structure simulator (HFSS), designed through parameter optimization. According to the optimized parameters, the sensor was customized and fabricated on a high temperature co-fired ceramic (HTCC) substrate using the three-dimensional co-fired technology and screen-printing technology. The pressure sensor was tested in the high-temperature pressure furnace and can work stably in the ambient environment of 25−500 °C and 10−300 kPa. The pressure sensitivity is 139.77 kHz/kPa at 25 °C, and with increasing temperature, the sensitivity increases to 191.97 kHz/kPa at 500 °C. The temperature compensation algorithm is proposed to achieve accurate acquisition of pressure signals in a high-temperature environment. Full article
(This article belongs to the Section E:Engineering and Technology)
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12 pages, 3697 KiB  
Article
A Ku-Band Miniaturized System-in-Package Using HTCC for Radar Transceiver Module Application
by Fan Yang, Bowen Zhang and Leijun Song
Micromachines 2022, 13(11), 1817; https://doi.org/10.3390/mi13111817 - 24 Oct 2022
Cited by 9 | Viewed by 2671
Abstract
This paper introduces a miniaturized system in package (SIP) for a Ku-band four-channel RF transceiver front-end. The SIP adopts the packaging scheme of an inner heat-dissipation gasket and multi-layer substrate in the high temperature co-fired ceramics (HTCC) shell with a metal heat sink [...] Read more.
This paper introduces a miniaturized system in package (SIP) for a Ku-band four-channel RF transceiver front-end. The SIP adopts the packaging scheme of an inner heat-dissipation gasket and multi-layer substrate in the high temperature co-fired ceramics (HTCC) shell with a metal heat sink at the bottom. The gasket effectively solves the heat-dissipation problem of high-power transceiver chips, and the multi-layer substrate achieves the interconnection between multiple chips. Within the limited size of 14.0 × 14.0 × 2.5 mm3, the SIP integrates five bidirectional amplifier chips, an amplitude-phase control multi-function chip, and two power modulation chips to realize the Ku-band four-channel RF transceiver front-end. Transmitting power over 0.5 W (27dBm) and receiving noise figure of 3.4 dB are achieved in the Ku-band. The efficient heat dissipation, high air tightness, and excellent integration are simultaneously realized in this SIP. The measurement results show that the performance is stable in the receiving and transmitting states, and the SIP based on HTCC technology has specific prospects for radar transceiver application. Full article
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10 pages, 4891 KiB  
Article
Wireless Passive Microwave Antenna-Integrated Temperature Sensor Based on CSRR
by Hairong Kou, Libo Yang, Xiaoyong Zhang, Zhenzhen Shang, Junbing Shi and Xiaoli Wang
Micromachines 2022, 13(4), 621; https://doi.org/10.3390/mi13040621 - 15 Apr 2022
Cited by 10 | Viewed by 3045
Abstract
A novel, wireless, passive substrate-integrated waveguide (SIW) temperature sensor based on a complementary split-ring resonator (CSRR) is presented for ultra-high-temperature applications. The temperature sensor model was established by using the software of HFSS (ANSYS, Canonsburg, PA, USA) to optimize the performance. This sensor [...] Read more.
A novel, wireless, passive substrate-integrated waveguide (SIW) temperature sensor based on a complementary split-ring resonator (CSRR) is presented for ultra-high-temperature applications. The temperature sensor model was established by using the software of HFSS (ANSYS, Canonsburg, PA, USA) to optimize the performance. This sensor can monitor temperature wirelessly using the microwave backscatter principle, which uses a robust high-temperature co-fired ceramic (HTCC) as the substrate for harsh environments. The results are experimentally verified by measuring the S (1,1) parameter of the interrogator antenna without contact. The resonant frequency of the sensor decreases with the increasing temperature using the dielectric perturbation method, which changes from 2.5808 to 2.35941 GHz as the temperature increases from 25 to 1200 °C. The sensitivity of the sensor is 126.74 kHz/°C in the range of 25–400 °C and 217.33 kHz/°C in the range of 400–1200 °C. The sensor described in this study has the advantages of simple structure, higher quality and sensitivity, and lower environmental interference, and has the potential for utilization in multi-site temperature testing or multi-parameter testing (temperature, pressure, gas) in high-temperature environments. Full article
(This article belongs to the Section E:Engineering and Technology)
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13 pages, 9355 KiB  
Article
Metallization, Material Selection, and Bonding of Interconnections for Novel LTCC and HTCC Power Modules
by Aleksander Sešek and Kostja Makarovič
Materials 2022, 15(3), 1036; https://doi.org/10.3390/ma15031036 - 28 Jan 2022
Cited by 8 | Viewed by 3883
Abstract
Ceramic baseplates are important elements in the power modules of electric drives. This paper presents low-temperature cofired ceramic (LTCC) and high-temperature cofired ceramic (HTCC) materials for the fabrication of three-dimensional power modules. The silver-based metallization and power module assembly are presented, together with [...] Read more.
Ceramic baseplates are important elements in the power modules of electric drives. This paper presents low-temperature cofired ceramic (LTCC) and high-temperature cofired ceramic (HTCC) materials for the fabrication of three-dimensional power modules. The silver-based metallization and power module assembly are presented, together with aluminum-based power wire bonding and an industrial procedure to achieve high solderability and bondability. The results of the bond tests using different metallization materials, especially cost-effective ones, are presented, together with the assembly of the power modules. The best results were achieved with Ag metallization and 380 µm Al wire and with Ag–Pd metallization and 25 µm Al wire, both on an LTCC base. The paper concludes with a dual-pulse electrical test of the power modules, which proves the quality of metallization, the type of material selected, and the correctness of the wire bonding and assembly. Full article
(This article belongs to the Special Issue Materials for LTCC Technology)
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13 pages, 3401 KiB  
Article
An Ultra-Wideband Compact TR Module Based on 3-D Packaging
by Zhiqiang Li, Houjun Sun, Hongjiang Wu and Shuai Zhang
Electronics 2021, 10(12), 1435; https://doi.org/10.3390/electronics10121435 - 15 Jun 2021
Cited by 17 | Viewed by 4213
Abstract
This study presents a novel four-channel tile-type T/R module which achieves excellent performances in ultra-wideband (2–12 GHz) and integrates all circuits in a super-light (25 g) and compact (27.8 × 27.8 × 12 mm3) mechanical structure in active phased array systems. [...] Read more.
This study presents a novel four-channel tile-type T/R module which achieves excellent performances in ultra-wideband (2–12 GHz) and integrates all circuits in a super-light (25 g) and compact (27.8 × 27.8 × 12 mm3) mechanical structure in active phased array systems. The key advancement of this T/R module was to choose a Ball Grid Array (BGA) as the vertical interconnection and bracing between High-Temperature Co-fired Ceramic (HTCC) substrates in order to achieve a high-integration 3-D structure. Exploiting the HTCC multilayer layout, this paper presents the design and development of an ultra-wideband, compact and light, high-output power, four-channel, dual-polarization Transmit/Receive (T/R) Module. In this module, microwave circuits and power control circuits are highly integrated into electrically isolated HTCC layers or substrates, resulting in low coupling and crosstalk between signals. Furthermore, multichip assembly technology, multifunctional MMICs, and other high-integration technologies were adopted for this module. Each channel could provide more than 2 W transmit output power, more than 15 dB receive gain, and less than 5 dB receive noise figure. Every module contains four channels. The power supply and phase/amplitude conditioning of each channel can be controlled individually and showed good consistency of the amplitude and phase of all channels. The connectors of manifold port and polarization ports are all SSMP, which can achieve further integration. This module has also an automatic negative power protection function. The module has stabilized performance and mass production prospects. Full article
(This article belongs to the Special Issue Analysis and Test of Microwave Circuits and Subsystems)
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11 pages, 3525 KiB  
Communication
Enhanced Thermal Management of GaN Power Amplifier Electronics with Micro-Pin Fin Heat Sinks
by Ting Kang, Yuxin Ye, Yuncong Jia, Yanmei Kong and Binbin Jiao
Electronics 2020, 9(11), 1778; https://doi.org/10.3390/electronics9111778 - 27 Oct 2020
Cited by 17 | Viewed by 5906
Abstract
This study introduces an enhanced thermal management strategy for efficient heat dissipation from GaN power amplifiers with high power densities. The advantages of applying an advanced liquid-looped silicon-based micro-pin fin heat sink (MPFHS) as the mounting plate for GaN devices are illustrated using [...] Read more.
This study introduces an enhanced thermal management strategy for efficient heat dissipation from GaN power amplifiers with high power densities. The advantages of applying an advanced liquid-looped silicon-based micro-pin fin heat sink (MPFHS) as the mounting plate for GaN devices are illustrated using both experimental and 3D finite element model thermal simulation methods, then compared against traditional mounting materials. An IR thermography system was equipped to obtain the temperature distribution of GaN mounted on three different plates. The influence of mass flow rate on a MPFHS was also investigated in the experiments. Simulation results showed that GaN device performance could be improved by increasing the thermal conductivity of mounting plates’ materials. The dissipated power density of the GaN power amplifier increased 17.5 times when the mounting plate was changed from LTCC (Low Temperature Co-fired Ceramics) (k = 2 Wm−1 K−1) to HTCC (High-Temperature Co-fired Ceramics) (k = 180 Wm−1 K−1). Experiment results indicate that the GaN device performance was significantly improved by applying liquid-looped MPFHS, with the maximum dissipated power density reaching 7250 W/cm2. A thermal resistance model for the whole system, replacing traditional plates (PCB (Printed Circuit Board), silicon wafer and LTCC/HTCC) with an MPFHS plate, could significantly reduce θjs (thermal resistance of junction to sink) to its theoretical limitation value. Full article
(This article belongs to the Section Power Electronics)
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15 pages, 17629 KiB  
Article
Slot Antenna Integrated Re-Entrant Resonator Based Wireless Pressure Sensor for High-Temperature Applications
by Shujing Su, Fei Lu, Guozhu Wu, Dezhi Wu, Qiulin Tan, Helei Dong and Jijun Xiong
Sensors 2017, 17(9), 1963; https://doi.org/10.3390/s17091963 - 25 Aug 2017
Cited by 26 | Viewed by 6914
Abstract
The highly sensitive pressure sensor presented in this paper aims at wireless passive sensing in a high temperature environment by using microwave backscattering technology. The structure of the re-entrant resonator was analyzed and optimized using theoretical calculation, software simulation, and its equivalent lump [...] Read more.
The highly sensitive pressure sensor presented in this paper aims at wireless passive sensing in a high temperature environment by using microwave backscattering technology. The structure of the re-entrant resonator was analyzed and optimized using theoretical calculation, software simulation, and its equivalent lump circuit model was first modified by us. Micro-machining and high-temperature co-fired ceramic (HTCC) process technologies were applied to fabricate the sensor, solving the common problem of cavity sealing during the air pressure loading test. In addition, to prevent the response signal from being immersed in the strong background clutter of the hermetic metal chamber, which makes its detection difficult, we proposed two key techniques to improve the signal to noise ratio: the suppression of strong background clutter and the detection of the weak backscattered signal of the sensor. The pressure sensor demonstrated in this paper works well for gas pressure loading between 40 and 120 kPa in a temperature range of 24 °C to 800 °C. The experimental results show that the sensor resonant frequency lies at 2.1065 GHz, with a maximum pressure sensitivity of 73.125 kHz/kPa. Full article
(This article belongs to the Section Physical Sensors)
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4 pages, 428 KiB  
Proceeding Paper
Direct Catalyst Conversion Sensor in Form of a Single Self-Heated Mixed-Potential Device
by Thomas Ritter, Gunter Hagen and Ralf Moos
Proceedings 2017, 1(4), 424; https://doi.org/10.3390/proceedings1040424 - 7 Aug 2017
Viewed by 2052
Abstract
Monitoring automotive exhaust gas aftertreatment components is required by law as part of the on-board diagnostics (OBD). For this purpose, a novel sensor device that determines directly the catalyst conversion could be used. It consists of a single, self-heated yttria stabilized ZrO2 [...] Read more.
Monitoring automotive exhaust gas aftertreatment components is required by law as part of the on-board diagnostics (OBD). For this purpose, a novel sensor device that determines directly the catalyst conversion could be used. It consists of a single, self-heated yttria stabilized ZrO2-based disc, separating two gas atmospheres. Two identical mixed-potential electrodes yield a voltage signal by comparing a certain trace gas concentration up- and downstream of the catalyst. Measurements in synthetic gas flow verify the theoretical assumption that this voltage signal only depends on the ratio of both concentrations, respectively on the conversion of the catalyst. Full article
(This article belongs to the Proceedings of Proceedings of Eurosensors 2017, Paris, France, 3–6 September 2017)
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13 pages, 501 KiB  
Article
A Wireless Passive Pressure Microsensor Fabricated in HTCC MEMS Technology for Harsh Environments
by Qiulin Tan, Hao Kang, Jijun Xiong, Li Qin, Wendong Zhang, Chen Li, Liqiong Ding, Xiansheng Zhang and Mingliang Yang
Sensors 2013, 13(8), 9896-9908; https://doi.org/10.3390/s130809896 - 2 Aug 2013
Cited by 47 | Viewed by 9636
Abstract
A wireless passive high-temperature pressure sensor without evacuation channel fabricated in high-temperature co-fired ceramics (HTCC) technology is proposed. The properties of the HTCC material ensure the sensor can be applied in harsh environments. The sensor without evacuation channel can be completely gastight. The [...] Read more.
A wireless passive high-temperature pressure sensor without evacuation channel fabricated in high-temperature co-fired ceramics (HTCC) technology is proposed. The properties of the HTCC material ensure the sensor can be applied in harsh environments. The sensor without evacuation channel can be completely gastight. The wireless data is obtained with a reader antenna by mutual inductance coupling. Experimental systems are designed to obtain the frequency-pressure characteristic, frequency-temperature characteristic and coupling distance. Experimental results show that the sensor can be coupled with an antenna at 600 °C and max distance of 2.8 cm at room temperature. The senor sensitivity is about 860 Hz/bar and hysteresis error and repeatability error are quite low. Full article
(This article belongs to the Special Issue Sensors for Harsh-Environment Applications)
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