Search Results (9)

In this paper, the temperature dependence of single event upset (SEU) cross-section in 28 nm embedded Static Random Access Memory (SRAM) of System in Package (SiP) was investigated. An atmospheric neutron beam with an energy range of MeV~GeV was utilized. The SEU cross-section increased by 39.8% when the temperature increased from 296 K to 382 K. Further Technology Computer Aided Design (TCAD) simulation results show that the temperature has a weak impact on the peak pulse current, which is mainly caused by the change of bipolar amplification effect with temperature. As the temperature increases, the critical charge of the device decreases by about 4.8%. The impact of temperature on the SEU cross-section is determined competitively by the peak pulse current and the critical charge. The impact of temperature on critical charge is expected to become more severe as the feature size is further advanced. Full article

Planar devices and FinFET devices exhibit significant differences in single-event upset (SEU) response and charge collection. However, the charge collection process during SEU in FinFET devices has not been thoroughly investigated. This article addresses this gap by establishing a FinFET SRAM simulation structure and employing simulation software to delve into the charge collection process of FinFET devices during single-event upset. The results reveal substantial differences in charge collection between NMOS and PMOS, and that direct incidence of PMOS leads to the phenomenon of multiple-node charge collection causing SRAM unit upset followed by recovery. Full article

A recent research has identified an inverse amplitude link between obliquity damping and short eccentricity amplification during the Mid-Late Pleistocene based on LR04 δ¹⁸O and equatorial Pacific Site 846 sea surface temperature records that is associated with the Earth’s long-term cooling. In the present study, new evidence of this anticorrelation is presented from Antarctic δD-CO₂-CH₄ records, global benthic–planktic δ¹⁸O, and regional (Atlantic, Pacific, Mediterranean, and Indian) climate-related proxies. Based on a critical review of theoretical constraints (Earth’s oblateness changes and ice-volume phase lag in the obliquity band <5.0 kyr), this widespread and symmetric (bipolar) obliquity response damping has been interpreted as an effect of the obliquity–oblateness feedback, which could be the latent physical mechanism at the origin of the Mid-Pleistocene Transition (MPT). Indeed, results and considerations of the present work suggest that fast and positive/negative net variation in the Earth’s oblateness in the obliquity band was controlled by a dominant glacio-eustatic water mass component and, assuming a rapid response of the ice volume to surface temperature changes, the mean obliquity lag response is estimated to be <5.0 kyr over the past 800 kyr. These elements may explain the interglacial/glacial damping observed in the obliquity response. The consolidation of the Earth’s long-term icy state in the subtrend IV, culminating with the post-MPT obliquity damping, might have contributed to the strengthening of the short eccentricity response by mitigating the obliquity ‘ice killing’ during obliquity maxima (interglacials), favouring the obliquity-cycle skipping and a feedback-amplified ice growth in the short eccentricity band (obliquity damping hypothesis). This suggests a different impact of the climate friction than what is generally believed, which is presumably the latent physical mechanism that triggers the transient ‘competitive’ interaction between obliquity and short eccentricity started early during the Piacenzian. Full article

In this paper, the single event effect of 6T-SRAM is simulated at circuit level and device level based on a 22 nm fully depleted silicon-on-insulator (FDSOI) process, and the effects of charge sharing and bipolar amplification are considered in device-level simulation. The results demonstrate that, under the combined influence of these two effects, the circuit’s upset threshold and critical charge decreased by 15.4% and 23.5%, respectively. This indicates that the charge sharing effect exacerbates the single event effects. By analyzing the incident conditions of two different incident radius particles, it is concluded that the particles with a smaller incident radius have a worse impact on the SRAM circuit, and are more likely to cause the single event upset in the circuit, indicating that the ionization distribution generated by the incident particle affects the charge collection. Full article

Fumonisin B₁ (FB₁) is a toxin produced by the metabolism of Fusarium oxysporum, which can cause serious effects on the nervous, respiratory, digestive, and reproductive systems of humans or animals; it is known as one of the highly toxic epidemic contaminants. Herein, we report the visual inspection of FB₁ using bipolar electrodes (BPEs) with an array-based electrochemiluminescence (ECL) platform. The sensor consists of a PDMS cover and a glass substrate containing an array of 10 ITO electrodes. A specific sensing interface was constructed on the cathode of the BPE, which could modulate the ECL reactions that occurred at the anode of BPEs. To amplify the ECL signal, methylene blue (MB)-encapsulated Zr-MOFs (MB@Zr-MOFs) were synthesized and immobilized on the cathode of the BPE, which could amplify the ECL signal at the anode. By coupling the cyclic amplification effect of the DNA walker and nicking endonuclease (Nb.BbvCI), the biosensor can realize the visual measurement of FB₁ in the range of 5 × 10⁻⁵~0.5 ng/mL. In addition, the developed biosensor was used to monitor the concentration of FB₁ in maize and peanut samples. The recoveries were in the range of 99.2%~110.6%, which demonstrated the good accuracy of the designed BPE-ECL biosensor for FB₁ assay in food samples. Full article

Au particles are commonly used for deposition on the surface of a bipolar electrode (BPE) in order to amplify electrochemical and electrochemiluminescence (ECL) signal because of their excellent conductivity, biocompatibility, and large surface area. In this work, a closed BPE device was fabricated and Au particles were deposited on the two poles of a BPE via bipolar deposition. Results indicated that the electrochemical stability of Au film on the anode part of the BPE and the reduction of AuCl₄^– to Au on the cathode part of the BPE depended on the conductivity of the solution. The prepared Au–Au BPE exhibited a remarkable amplification effect on the ECL signal. Then, a specific sensing interface was constructed on one pole of the BPE for the visual detection of prostate-specific antigens (PSA) based on sandwich-type immunoreactions between primary PSA antibodies (Ab₁) on the electrode surface, PSA, and SiO₂ nanoparticles labeled secondary PSA antibodies (SiO₂-Ab₂). The designed biosensor exhibited a good linear relationship for the ECL detection of PSA in the range of 1 × 10⁻⁶ to 1 × 10⁻¹⁰ g/mL with a correlation coefficient of 0.9866; the limit of detection (LOD) was 1.5 × 10⁻¹¹ g/mL. Additionally, the biosensor can realize the electrochemical imaging of PSA by regulating the electrochemical oxidation of the Au anode with the immunoreactions on the cathode part of BPE. Therefore, the small, portable and highly sensitive biosensors have great potential for on-site detection. Full article

FDSOI (Fully Depleted Silicon On Insulator) devices have a good performance in anti-single-event circuits. However, the bipolar amplification effect becomes a severe problem due to the buried oxide. The previous models for Single Event Transient (SET) of FDSOI did not fully consider the current of all components. Most importantly, they did not take the influence of the back-gate voltage into account. Thus, this paper presents a modeling method for the SET current in FDSOI MOSFET where all three components are modeled individually. The prompt current and diffusion current are modeled with a current source respectively. The Berkeley Short-channel IGFET Model for Silicon-on-Insulator (BSIMSOI) model is integrated into this model to calculate the bipolar amplification current. Compared to using the bipolar transistor model, this method avoids additional current input from the base electrode. It is more consistent with the mechanism of bipolar amplification effect for FDSOI devices without body contact. Instantaneously, an improved model is proposed that considers the influence of the back-gate voltage on the SET of the FDSOI devices. All models are validated through Technology Computer Aided Design (TCAD)simulation results. Full article

The heavy ion-induced sensitive area is an essential parameter for space application integrated circuits. Circuit Designers need it to evaluate and mitigate heavy ion-induced soft errors. However, it is hard to measure this parameter due to the lack of test structures and methods. In this paper, a test method called TAISAM was proposed to measure the heavy ion-induced sensitive area. TAISAM circuits were irradiated under the heavy ions. The measured sensitive areas are 1.75 $\mathsf{\mu }$m${}^2$ and 1.00 $\mathsf{\mu }$m${}^2$ with different LET values. TAISAM circuits are also used to investigate the layout structures that can affect the sensitive area. When the source region of the target transistor is floating, the heavy ion-induced sensitive area decreases by 28.5% for the target PMOS transistor while it increases by more than 28% for the target NMOS transistor. When the well contacts are added, the heavy ion-induced sensitive area decreases by more than 25% for the target PMOS transistor while it remains unchanged for the target NMOS transistor. Experimental results directly validate that the two structures significantly affect the heavy ion-induced sensitive area. Full article

Breast cancer gene 1 (BRCA1)-associated RING domain protein 1 (BARD1) forms a heterodimer with BRCA1, a tumor suppressor associated with hereditary breast and ovarian cancer. BRCA1/BARD1 functions in multiple cellular processes including DNA repair and centrosome regulation. Centrosomes are the major microtubule-organizing centers in animal cells and are critical for the formation of a bipolar mitotic spindle. BRCA1 and BARD1 localize to the centrosome during the cell cycle, and the BRCA1/BARD1 dimer ubiquitinates centrosomal proteins to regulate centrosome function. We identified Obg-like ATPase 1 (OLA1) and receptor for activated C kinase (RACK1) as BRCA1/BARD1-interating proteins that bind to BARD1 and BRCA1 and localize the centrosomes during the cell cycle. Cancer-derived variants of BRCA1, BARD1, OLA1, and RACK1 failed to interact, and aberrant expression of these proteins caused centrosome amplification due to centriole overduplication only in mammary tissue-derived cells. In S-G2 phase, the number of centrioles was higher in mammary tissue-derived cells than in cells from other tissues, suggesting their involvement in tissue-specific carcinogenesis by BRCA1 and BARD1 germline mutations. We described the function of BARD1 in centrosome regulation in cooperation with BRCA1/OLA1/RACK1, as well as the effect of their dysfunction on carcinogenesis. Full article