Search Results (32)

Direct chemical vapor deposition (CVD) growth of hexagonal boron nitride (h-BN) on insulating substrates offers a promising pathway to circumvent transfer-induced defects and enhance device integration. This comprehensive review systematically evaluates recent advances in CVD techniques for h-BN synthesis on insulating substrates, including metal–organic CVD (MOCVD), low-pressure CVD (LPCVD), atmospheric-pressure CVD (APCVD), and plasma-enhanced CVD (PECVD). Key challenges, including precursor selection, high-temperature processing, achieving single-crystalline films, and maintaining phase purity, are critically analyzed. Special emphasis is placed on comparative performance metrics across different growth methodologies. Furthermore, crucial research directions for future development in this field are outlined. This review aims to serve as a reference for advancing h-BN synthesis toward practical applications in next-generation electronic and optoelectronic devices. Full article

In this paper, we explore a straightforward two-step method to produce high-purity, vertically aligned multi-walled carbon nanofibres (MWCNFs) via chemical vapor deposition (CVD). Two distinct solutions are utilized for this CVD method: a catalytic solution consisting of ferrocene and acetonitrile (ACN) and a carbon source solution with camphor and ACN. The vapors of the catalytic solution inserted in the reaction chamber through external boiling result in a floating catalyst CVD approach that produces vertically aligned CNFs in a consistent manner. CNFs are grown in a conventional CVD horizontal reactor at 850 °C under atmospheric pressure and characterized by Raman spectroscopy, scanning and transmission electron microscopy (SEM and TEM), X-ray diffraction (XRD), and thermogravimetric analysis (TGA). Coating the MWCNTs with polymethyl methacrylate (PMMA) while still on the Si substrate retains the structure and results in a flexible, conductive thin film suitable for flexible electrodes. The film is 62 μm thick and stable in aqueous solutions, capable of withstanding further processing, such as electropolymerization with polyaniline, to be used for energy storage applications. Full article

In this paper, 20 µm and 40 µm thick aluminide coatings were deposited on MAR-M247 nickel-based superalloy through the chemical vapor deposition (CVD) process in a hydrogen protective atmosphere for 4 h and 12 h, respectively, at a temperature of 1040 °C and an internal pressure of 150 mbar. The effect of aluminide coating thickness on the high-temperature performance of the MAR-M247 nickel-based superalloy was examined during a fatigue test at 900 °C. After high-temperature testing, the specimens were subjected to fractographic analysis to reveal the damage mechanisms. No significant effect of coating thickness was found since the material exhibited a similar service life throughout the fatigue test when subjected to the same stress amplitude. One should stress that the coating remained well adhered after specimen fracture, confirming its effectiveness in protecting the material against high-temperature oxidation. Full article

Highly indium-rich group-III nitrides are attracting attention for advancing our capacity to create highly effective optical emitters at extended visible/IR wavelengths or for enhancing bandgap engineering possibilities within the group-III nitride material framework. Current methods of synthesis are constrained in their efficacy, partially owing to the low decomposition temperature of indium nitride. Implementation of a new design of a vertical high-pressure spatial chemical vapor deposition (HPS-CVD) reactor with six separated precursor source zones and a rotating wafer carrier disk carrying four 2-inch wafers is proposed and analyzed using COMSOL Multiphysics as a commercial computational fluid dynamics (CFD) program to study the fluid phenomena inside the numerical domain. This study focuses on understanding the different flow patterns within the chambers at super-atmospheric conditions (5 atm to 30 atm) and identifying suitable operating conditions under which smooth and dominant vortex-free flow is achieved. Four 2-inch wafers are heated to maintain a temperature of 1200–1300 K at each pressure and gas type. Three different gas types (nitrogen, hydrogen, and ammonia) are used, and the impacts of different inlet flow velocities and rotational speeds are investigated and discussed. An operating matrix is presented for each analyzed system pressure providing suitable combinations of these operational variables for smooth flow in the chambers. Each gas type was identified to have a range of suitable rotational and inlet velocity regimes at each operating pressure. Overlap of these three gas-specific operating condition windows resulted in the identification of a generally suitable operating condition for smooth flow patterns in the system regardless of the gas type used, as required for the growth of group-III nitride materials. Full article

We report for the first time the successful synthesis of ZnO/WS₂ hybrid material using a combination of aerosol-assisted chemical vapor deposition (AA-CVD) and atmospheric pressure CVD techniques. The morphology and the composition of the grown films were investigated and the results confirm the co-existence of both materials. Moreover, gas-sensing results against 500 ppb of NO₂ revealed the influence of WS₂ material on the ZnO gas-sensing performance. The operating temperature shifted towards lower values, from 300 °C to 150 °C. Furthermore, at room temperature, the ZnO/WS₂ sensor was able to detect NO₂ at ppb level. Full article

High indium-content group-III nitrides are of interest to further expand upon our ability to produce highly efficient optical emitters at longer visible/IR wavelengths or to broaden bandgap engineering opportunities in the group-III nitride material system. Current synthesis approaches are limited in their capabilities, in part due to the low decomposition temperature of indium nitride. A new high-pressure spatial chemical vapor deposition (HPS-CVD) has been proposed which can operate at pressures up to 100 atmospheres, thereby significantly raising the growth temperature of indium nitride more than 100 kelvins and permitting the investigation of the impact of pressure on precursor stability and reactivity. This study systematically analyzes an HPS-CVD reactor design using computational fluid dynamic modeling in order to understand favorable operating conditions for growth of group III nitrides. Specifically, the relationship between inlet gas type (nitrogen, hydrogen, or ammonia), inlet gas velocity, gas flow rate, and rotational speed of the wafer carrier is evaluated for conditions under which a smooth and dominant vortex-free flow are obtained over the wafer. Heater power was varied to maintain a wafer temperature of 1250–1300 K. Favorable operating conditions were identified that were simultaneously met for all three gas types, providing a stable operating window for a wide range of gas chemistries for growth; at one atmosphere, a disk rotational speed of 50 rpm and a flow rate of 12 slm for all gas types is desired. Full article

This study demonstrated the epitaxial growth of single-phase (111) CoO and (111) Co₃O₄ thin films on a-plane sapphire substrates using an atmospheric pressure mist chemical vapor deposition (mist-CVD) process. The phase structure of the grown cobalt oxide films was manipulated by controlling the growth temperature and process ambient, confirmed through X-ray diffraction, Raman spectroscopy, and X-ray photoelectron spectroscopy. Furthermore, the electrical properties of Co₃O₄ films were significantly improved after thermal annealing in oxygen ambient, exhibiting a stable p-type conductivity with an electrical resistivity of 8.35 Ohm cm and a carrier concentration of 4.19 × 10¹⁶ cm⁻³. While annealing CoO in oxygen atmosphere, the Co₃O₄ films were found to be most readily formed on the CoO surface due to the oxidation reaction. The orientation of the atomic arrangement of formed Co₃O₄ was epitaxially constrained by the underlying CoO epitaxial layer. The oxidation of CoO to Co₃O₄ was largely driven by outward diffusion of cobalt cations, resulting in the formation of pores in the interior of formed Co₃O₄ films. Full article

In this study, the novel coaxial-annulus-argon-assisted (CAAA) atmosphere is proposed to enhance the machining capacity of the water-jet-guided laser (WJGL) when dealing with hard-to-process materials, including ceramic matrix composites (CMCs) and chemical-vapor-deposition (CVD) diamond. A theoretical model was developed to describe the two-phase flow of argon and the water jet. Simulations and experiments were conducted to analyze the influence of argon pressure on the working length of the WJGL beam, drainage circle size, and extreme scribing depth on ceramic matrix composite (CMC) substrates. A comparative experiment involving coaxial annulus and helical atmospheres revealed that the coaxial annulus atmosphere disrupts the water jet proactively, while effectively maintaining the core velocity within the confined working length and enhancing the processing capability of the WJGL beam. Single-point percussion drilling experiments were performed on a CMC substrate to evaluate the impact of machining parameters on hole morphology. The maximum depth-to-width ratio of the groove and depth-to-diameter ratio of the hole reached up to 41.2 and 40.7, respectively. The thorough holes produced by the CAAAWJGL demonstrate superior roundness and minimal thermal damage, such as fiber drawing and delamination. The average tensile strength and fatigue life of the CMCs specimens obtained through CAAAWJGL machining reached 212.6 MPa and 89,463.8 s, exhibiting higher machining efficiency and better mechanical properties compared to femtosecond (194.2 MPa; 72,680.2 s) and picosecond laser (198.6 MPa; 80,451.4 s) machining. Moreover, groove arrays with a depth-to-width ratio of 11.5, good perpendicularity, and minimal defects on a CVD diamond were fabricated to highlight the feasibility of the proposed machining technology. Full article

The process of graphene growth by CVD involves a series of complex gas-phase surface chemical reactions, which generally go through three processes, including gas phase decomposition, surface chemical reaction, and gas phase diffusion. The complexity of the CVD process for growing graphene is that it involves not only chemical reactions but also mass, momentum, and energy transfer. To solve these problems, the method of numerical simulation combined with the reactor structure optimization model provides a good tool for industrial production and theoretical research to explore the influencing factors of the CVD growth of graphene. The objective of this study was to establish a simplified reaction model for the growth of graphene by chemical vapor deposition(CVD) in a vertical rotating disk reactor (VRD). From a macroscopic modeling perspective, computational fluid dynamics (CFD) was used to investigate the conditions for the growth of graphene by chemical vapor deposition in a high-speed rotating vertical disk reactor on a copper substrate surface at atmospheric pressure (101,325 Pa). The effects of gas temperature, air inlet velocity, base rotation speed, and material ratio on the surface deposition rate of graphene in a VRD reactor were studied, and the technological conditions for the preparation of graphene via the CVD method in a VRD reactor based on a special structure were explored. Compared with existing models, the numerical results showed the following: the ideal growth conditions of graphene prepared using a CVD method in a VRD reactor involve a growth temperature of 1310 K, an intake speed of 470 mL/min, a base speed of 300 rpm, and an H₂ flow rate of 75 sccm; thus, more uniform graphene with a better surface density and higher quality can be obtained. The effect of the carbon surface deposition rate on the growth behavior of graphene was studied using molecular dynamics (MD) from a microscopic perspective. The simulation showed that the graphene surface deposition rate could control the nucleation density of graphene. The combination of macro- and microsimulation methods was used to provide a theoretical reference for the production of graphene. Full article

Titanium nitride (TiN) thin film coatings were grown over silicon ($p$-type) substrate using the atmospheric pressure chemical vapour deposition (APCVD) technique. The synthesis process was carried out to evaluate the effect of deposition time on the physical and mechanical characteristics of TiN coating. Thin films grown over Si substrate were further characterised to evaluate the morphological properties, surface roughness and mechanical properties using a scanning electrode microscope (SEM), atomic force microscopy (AFM) and nanoindentation, respectively. EDS equipped with SEM showed the presence of Ti and N elements in considerable amounts. TiN morphology obtained from the SEM test showed small-sized particles on the surface along with cracks and pores. AFM results revealed that by increasing the deposition time, the surface roughness of the coating also increased. The nanomechanical properties such as nanohardness ($H$) and Young’s modulus ($E$), etc., evaluated using the nanoindentation technique showed that higher deposition time led to an increase in $H$ and $E$. Overall, it was observed that deposition time plays a vital role in the TiN coating deposition using the CVD technique. Full article

Although direct methanol fuel cells (DMFCs) have been spotlighted in the past decade, their commercialization has been hampered by the poor efficiency of the methanol oxidation reaction (MOR) due to the unsatisfactory performance of currently available electrocatalysts. Herein, we developed a binder-free, copper-based, self-supported electrode consisting of a heterostructure of Cu₃P and mixed copper oxides, i.e., cuprous–cupric oxide (Cu-O), as a high-performance catalyst for the electro-oxidation of methanol. We synthesized a self-supported electrode composed of Cu-O|Cu₃P using a two-furnace atmospheric pressure–chemical vapor deposition (AP-CVD) process. High-resolution transmission electron microscopy analysis revealed the formation of 3D nanocrystals with defects and pores. Cu-O|Cu₃P outperformed the MOR activity of individual Cu₃P and Cu-O owing to the synergistic interaction between them. Cu₃P|Cu-O exhibited a highest anodic current density of 232.5 mAcm⁻² at the low potential of 0.65 V vs. Hg/HgO, which is impressive and superior to the electrocatalytic activity of its individual counterparts. The formation of defects, 3D morphology, and the synergistic effect between Cu₃P and Cu-O play a crucial role in facilitating the electron transport between electrode and electrolyte to obtain the optimal MOR activity. Cu-O|Cu₃P shows outstanding MOR stability for about 3600 s with 100% retention of the current density, which proves its robustness alongside CO intermediate. Full article

Nitrogen-doped, 3-dimensional graphene (N3DG), synthesized as a one-step thermal CVD process, was further functionalized with atmospheric pressure oxygen plasma. Electrodes were fabricated and tested based on the functionalized N3DG. Their characterization included scanning electron microscopy (SEM), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), Brunauer–Emmet–Teller (BET), and electrochemical measurements. The tested electrodes revealed a 208% increase in the specific capacitance compared to pristine 3D graphene electrodes in a three-electrode configuration. The performed doping and plasma treatment enabled an increase in the electrode‘s surface area by 4 times compared to pristine samples. Furthermore, the XPS results revealed the presence of nitrogen and oxygen functional groups in the doped and functionalized material. Symmetric supercapacitors assembled from the functionalized 3D graphene using aqueous and organic electrolytes were compared for electrochemical performance. The device with ionic electrolyte EMIMB₄ electrolyte exhibited a superior energy density of 54 Wh/kg and power density of 1224 W/kg. It also demonstrated a high-cyclic stability of 15,000 cycles with a capacitance retention of 107%. Full article

In this article, multiwalled carbon nanotubes (MWCNTs) have been synthesized on the surface of a diatomite mineral impregnated with transition metal salts using a propane-butane mixture in a chemical vapor deposition reactor at atmospheric pressure. The catalyst concentration and synthesis temperature have been varied in order to understand their effects on the formation of MWCNTs and their morphology. Diatomite was chosen as a catalyst carrier due to its elemental composition. It is mainly composed of amorphous silica, quartz and also contains such metals as Fe, K, Ca, Mn, Cr, Ti, and Zn, which makes it a promising material for use as a catalyst carrier when synthesizing carbon nanotubes (CNTs) by catalytic chemical vapor deposition (C-CVD). For the synthesis of carbon nanotubes by C-CVD on the surface of the diatomite, the following salts were used as a catalyst: CoCl₂·6H₂O; Ni(NO₃)₂·6H₂O, and the concentrations of the solutions were 0.5; 1.0 and 1.5 M. Natural diatomite was characterized by X-ray diffraction analysis (XRD) and Scanning Electron Microscopy (SEM) analysis. Full article

Boron as thin film material is of relevance for use in modern micro- and nano-fabrication technology. In this research boron thin films are realized by a number of physical and chemical deposition methods, including magnetron sputtering, electron-beam evaporation, plasma enhanced chemical vapor deposition (CVD), thermal/non-plasma CVD, remote plasma CVD and atmospheric pressure CVD. Various physical, mechanical and chemical characteristics of these boron thin films are investigated, i.e., deposition rate, uniformity, roughness, stress, composition, defectivity and chemical resistance. Boron films realized by plasma enhanced chemical vapor deposition (PECVD) are found to be inert for conventional wet chemical etchants and have the lowest amount of defects, which makes this the best candidate to be integrated into the micro-fabrication processes. By varying the deposition parameters in the PECVD process, the influences of plasma power, pressure and precursor inflow on the deposition rate and intrinsic stress are further explored. Utilization of PECVD boron films as hard mask for wet etching is demonstrated by means of patterning followed by selective structuring of the silicon substrate, which shows that PECVD boron thin films can be successfully applied for micro-fabrication. Full article

Chemical vapor deposition (CVD) is regarded as the most promising technique for the mass production of graphene. CVD synthesis under vacuum is the most employed process, because the slower kinetics give better control on the graphene quality, but the requirement for high-vacuum equipment heavily affects the overall energy cost. In this work, we explore the possibility of using electroformed Cu substrate as a catalyst for atmospheric-pressure graphene growth. Electrochemical processes can produce high purity, freestanding metallic films, avoiding the surface defects that characterize the rolled foils. It was found that the growth mode of graphene on the electroformed catalyst was related to the surface morphology, which, in turn, was affected by the preliminary treatment of the substrate material. Suitable conditions for growing single layer graphene were identified. Full article