Search Results (9)

This study aims to reduce the phase transition temperature (PTT) of W-doped vanadium dioxide (VO₂) multilayer thin films. We designed and fabricated two asymmetric multilayer thin film structures; namely, TiO₂/VO₂-5%W/ITO and ITO/VO₂-5%W/TiO₂. The W-doped VO₂-based Trilayer thin films were deposited using an electron beam evaporation combined with the ion-assisted deposition (IAD) technique. An experimental study was conducted on the temperature-dependent residual stress and optical properties of the two asymmetric VO₂-based three-layer structures. The VO₂-based thin films were characterized using UV–Vis–NIR spectrophotometry, Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, and an improved Twyman–Green interferometer combined with fast Fourier transform (FFT) analysis for residual stress measurement. The trilayer structures incorporated a ~60 nm thick W-doped VO₂ middle layer, which plays a critical role in modulating thermochromic behavior and residual stress evolution. The results show that both trilayer thin films demonstrated excellent optical performance in transmission spectra. Raman spectral analysis revealed a blue shift in the characteristic W-doped VO₂ peaks, accompanied by a decrease in peak intensity as the temperature increased. Heating experiments on asymmetric W-doped VO₂ trilayer thin films revealed that the critical transition temperature of the ITO/VO₂-5%W/TiO₂/B270 trilayer film structure was significantly reduced to 45 °C. This demonstrates the effectiveness of our proposed multilayer film design in improving the PTT of W-doped VO₂ thin films. Analysis of the changes in residual stress of the trilayer thin films during heating experiments revealed that the residual stress shifted from compressive to tensile in the temperature range of 40 °C to 50 °C. The thermal expansion coefficient and biaxial modulus of the TiO₂/VO₂-5%W/ITO trilayer film structure were 5.37 × 10⁻⁶ °C⁻¹ and 295.7 GPa, respectively. In addition, the thermal expansion coefficient and biaxial modulus of the ITO/VO₂-5%W/TiO₂ trilayer film structure were 6.65 × 10⁻⁶ °C⁻¹ and 745.0 GPa. Full article

Thermochromic smart windows are a promising technology to reduce energy consumption in buildings, particularly in tropical regions where cooling demands are high. Vanadium dioxide (VO₂) is the most studied thermochromic material due to its reversible semiconductor-to-metal transition near 68 °C. Conventional synthesis routes require long reaction times and post-annealing steps. In this work, we report a rapid hydrothermal synthesis of monoclinic VO₂(M) and tungsten-doped VO₂(M) powders obtained within only 6 h at 270 °C, using vanadyl sulfate as precursor and controlled precipitation at pH ≈ 8.5. Differential scanning calorimetry confirmed the reversible transition at 59 °C for the undoped VO₂, with a hysteresis of 18 °C, while tungsten doping reduced the transition temperature by ~17 °C per wt.% of W. X-ray diffraction verified the monoclinic phase with minor traces of VO₂(B), a non-thermochromic polymorph of VO₂, and microstructural analysis revealed crystallite sizes below 35 nm. Electron microscopy and dynamic light scattering confirmed particle sizes suitable for dispersion in polymeric matrices. This approach significantly reduces synthesis time compared to typical hydrothermal methods requiring 20–48 h and avoids further annealing. The resulting powders provide a low-cost and scalable route for fabricating thermochromic coatings with transition temperatures closer to ambient conditions, making them relevant for smart-window applications in tropical climates, where lower transition temperatures are generally regarded as beneficial. Full article

This study investigates the effects of different tungsten (W) doping contents on the optical transmittance, surface roughness, residual stress, and microstructure of evaporated vanadium dioxide (VO₂) thin films. W-doped VO₂ thin films with varying tungsten concentrations were fabricated using electron beam evaporation combined with ion-assisted deposition techniques, and deposited on silicon wafers and glass substrates. The optical transmittances of undoped and W-doped VO₂ thin films were measured by UV/VIS/NIR spectroscopy and Fourier transform infrared (FTIR) spectroscopy. The root mean square surface roughness was measured using a Linnik microscopic interferometer. The residual stress in various W-doped VO₂ films was evaluated using a modified Twyman–Green interferometer. The surface morphological and structural characterization of the W-doped VO₂ thin films were performed by field-emission scanning electron microscopy (FE-SEM) and X-ray diffraction (XRD). Raman spectroscopy was used to analyze the structure and vibrational modes of different W-doped VO₂ thin films. These results show that the addition of tungsten significantly alters the structural, optical, and mechanical properties of VO₂ thin films. Full article

Tungsten-doped vanadium dioxide (W-VO₂) shows semiconductor-to-metal phase transition properties at room temperature, which is an ideal thermo-chromic smart window material. However, low visual transmittance and solar modulation limit its application in building energy saving. In this paper, a W-VO_2−x@AA core-shell nanoparticle is proposed to improve the thermo-chromic performance of W-VO₂. Oxygen vacancies were used to promote the connection of W-VO_2−x nanoparticles with L-ascorbic acid (AA) molecules. Oxygen vacancies were tuned in W-VO₂ nanoparticles by thermal annealing temperatures in vacuum, and W-VO_2−x@AA nanoparticles were synthesized by the hydrothermal method. A smart window was formed by dispersing W-VO_2−x@AA core-shell nanoparticles into PVP evenly and spin-coating them on the surface of glass. The visual transmittance of this smart window reaches up to 67%, and the solar modulation reaches up to 12.1%. This enhanced thermo-chromic performance is related to the electron density enhanced by the AA surface molecular coordination effect through W dopant and oxygen vacancies. This work provides a new strategy to enhance the thermo-chromic performance of W-VO₂ and its application in the building energy-saving field. Full article

This study explores the surface characteristics evaluation and performance optimization of tungsten (W)-doped vanadium dioxide (VO₂) thin films. W-doped vanadium dioxide films were deposited on B270 glass substrates using an electron beam evaporation technique combined with the ion beam-assisted deposition (IAD) method. The Taguchi method was used to analyze the performance optimization of VO₂ thin films, and L₁₆ orthogonal array design and Minitab software were used for optimization calculations. The surface roughness, visible light transmittance, infrared transmittance, and residual stress of un-doped and tungsten-doped (3–5%) VO₂ thin films are set as the quality performance indicators of thin films. The goal is to identify the key factors that affect the performance of VO₂ thin films during deposition and optimize their process parameters. The experimental results showed that a VO₂ thin film with 3% tungsten doping, an oxygen flow rate of 60 sccm, a heating temperature of 280 °C, and a film thickness of 60 nm exhibited the lowest surface roughness of 2.12 nm. A VO₂ thin film with 5% tungsten doping, an oxygen flow rate of 0 sccm, a heating temperature of 280 °C, and a film thickness of 60 nm had the highest visible light transmittance at 64.33%. When the oxygen flow rate was 60 sccm, the heating temperature was 295 °C, the film thickness was 150 nm, and the tungsten doping was 5%, the VO₂ thin film showed the lowest infrared transmittance of 31.34%. A thin film with 5% tungsten doping, an oxygen flow rate of 20 sccm, a heating temperature of 265 °C, and a film thickness of 120 nm exhibited the lowest residual stress of −0.195 GPa. Full article

With the rapid development of industrialization, the emission of nitrogen oxides (NO_x) has become a global environmental issue. Uranium is the primary fuel used in nuclear power generation. However, the production of uranium, typically based on the uranyl nitrate method, usually generates large amounts of nitrogen oxides, particularly NO₂, with concentrations in the exhaust gas exceeding 10,000 ppm. High concentrations of nitrogen dioxide are also produced during silver electrolysis processing and the treatment of waste electrolyte solutions. Traditional V-W/TiO₂ NH₃-SCR catalysts typically exhibit high catalytic activity at temperatures ranging from 300 to 400 °C, under conditions of low NO_x concentrations and high gas hourly space velocity. However, their performance is not satisfying when reducing high concentrations of NO₂. This study aims to optimize the traditional V-W/TiO₂ catalysts to enhance their catalytic activity under conditions of high NO₂ concentrations (10,000 ppm) and a wide temperature range (200–400 °C). On the basis of 3 wt% Mo/TiO₂, various loadings of V₂O₅ were selected, and their catalytic activities were tested. Subsequently, the optimal ratios of active component vanadium and additive molybdenum were explored. Simultaneously, doping with WO₃ for modification was selected in the V-Mo/TiO₂ catalyst, followed by activity testing under the same conditions. The results show that: the NO_x conversion rates of all five catalysts increase with temperature at range of 200–400 °C. Excessive loading of MoO₃ decreased the catalytic performance, with 5 wt% being the optimal loading. The addition of WO₃ significantly enhanced the low-temperature activity of the catalysts. When the loadings of WO₃ and MoO₃ were both 3 wt%, the catalyst exhibited the best denitrification performance, achieving a NO_x conversion rate of 98.8% at 250 °C. This catalyst demonstrates excellent catalytic activity in reducing very high concentration (10,000 ppm) NO₂, at a wider temperature range, expanding the temperature range by 50% compared to conventional SCR catalysts. Characterization techniques including BET, XRD, XPS, H₂-TPR, and NH₃-TPD were employed to further study the evolution of the catalyst, and the promotional mechanisms are explored. The results revealed that the proportion of chemisorbed oxygen (O_α) increased in the WO₃-modified catalyst, exhibiting lower V reduction temperatures, which are favorable for low-temperature denitrification activity. NH₃-TPD experiments showed that compared to MoO_x species, surface WO_x species could provide more acidic sites, resulting in stronger surface acidity of the catalyst. Full article

The undoped and tungsten (W)-doped vanadium dioxide (VO₂) thin films were prepared by electron beam evaporation associated with ion-beam-assisted deposition (IAD). The influence of different W-doped contents (3–5%) on the electrical, optical, structural, and thermo-mechanical properties of VO₂ thin films was investigated experimentally. Spectral transmittance results showed that with the increase in W-doped contents, the transmittance in the visible light range (400–750 nm) decreases from 60.2% to 53.9%, and the transmittance in the infrared wavelength range (2.5 μm to 5.5 μm) drops from 55.8% to 15.4%. As the W-doped content increases, the residual stress in the VO₂ thin film decreases from −0.276 GPa to −0.238 GPa, but the surface roughness increases. For temperature-dependent spectroscopic measurements, heating the VO₂ thin films from 30 °C to 100 °C showed the most significant change in transmittance for the 5% W-doped VO₂ thin film. When the heating temperature exceeds 55 °C, the optical transmittance drops significantly, and the visible light transmittance drops by about 11%. Finally, X-ray diffraction (XRD) and scanning electron microscope (SEM) were used to evaluate the microstructure characteristics of VO₂ thin films. Full article

Vanadium dioxide (VO₂) with semiconductor-metal phase transition characteristics has presented great application potential in various optoelectrical smart devices. However, the preparation of doped VO₂ film with a lower phase transition threshold on Si substrate needs more investigation for the exploration of silicon-based VO₂ devices. In this work, the VO₂ films doped with different contents of W element were fabricated on high-purity Si substrate, assisted with a post-annealing process. The films exhibited good crystallinity and uniform thickness. The X-ray diffraction and X-ray photoelectron spectroscopy characterizations illustrated that W element can be doped into the lattice of VO₂ and lead to small lattice distortion. In turn, the in situ FT-IR measurements indicated that the phase transition temperature of the VO₂ films can be decreased continuously with W doping content. Simultaneously, the doping would lead to largely enhanced conductivity in the film, which results in reduced optical transmittance. This work provides significant insights into the design of doped VO₂ films for silicon-based devices. Full article

Vanadium dioxide (VO₂) with an insulator-to-metal (IMT) transition (∼68 °C) is considered a very attractive thermochromic material for smart window applications. Indeed, tailoring and understanding the thermochromic and surface properties at lower temperatures can enable room-temperature applications. The effect of W doping on the thermochromic, surface, and nanostructure properties of VO₂ thin film was investigated in the present proof. W-doped VO₂ thin films with different W contents were deposited by pulsed laser deposition (PLD) using V/W (+O₂) and V₂O₅/W multilayers. Rapid thermal annealing at 400–450 °C under oxygen flow was performed to crystallize the as-deposited films. The thermochromic, surface chemistry, structural, and morphological properties of the thin films obtained were investigated. The results showed that the V⁵⁺ was more surface sensitive and W distribution was homogeneous in all samples. Moreover, the V₂O₅ acted as a W diffusion barrier during the annealing stage, whereas the V+O₂ environment favored W surface diffusion. The phase transition temperature gradually decreased with increasing W content with a high efficiency of −26 °C per at. % W. For the highest doping concentration of 1.7 at. %, VO₂ showed room-temperature transition (26 °C) with high luminous transmittance (62%), indicating great potential for optical applications. Full article