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16 pages, 1196 KiB  
Article
Integrated Additive Manufacturing of TGV Interconnects and High-Frequency Circuits via Bipolar-Controlled EHD Jetting
by Dongqiao Bai, Jin Huang, Hongxiao Gong, Jianjun Wang, Yunna Pu, Jiaying Zhang, Peng Sun, Zihan Zhu, Pan Li, Huagui Wang, Pengbing Zhao and Chaoyu Liang
Micromachines 2025, 16(8), 907; https://doi.org/10.3390/mi16080907 (registering DOI) - 2 Aug 2025
Abstract
Electrohydrodynamic (EHD) printing offers mask-free, high-resolution deposition across a broad range of ink viscosities, yet combining void-free filling of high-aspect-ratio through-glass vias (TGVs) with ultrafine drop-on-demand (DOD) line printing on the same platform requires balancing conflicting requirements: for example, high field strengths to [...] Read more.
Electrohydrodynamic (EHD) printing offers mask-free, high-resolution deposition across a broad range of ink viscosities, yet combining void-free filling of high-aspect-ratio through-glass vias (TGVs) with ultrafine drop-on-demand (DOD) line printing on the same platform requires balancing conflicting requirements: for example, high field strengths to drive ink into deep and narrow vias; sufficiently high ink viscosity to prevent gravity-induced leakage; and stable meniscus dynamics to avoid satellite droplets and charge accumulation on the glass surface. By coupling electrostatic field analysis with transient level-set simulations, we establish a dimensionless regime map that delineates stable cone-jetting regime; these predictions are validated by high-speed imaging and surface profilometry. Operating within this window, the platform achieves complete, void-free filling of 200 µm × 1.52 mm TGVs and continuous 10 µm-wide traces in a single print pass. Demonstrating its capabilities, we fabricate transparent Ku-band substrate-integrated waveguide antennas on borosilicate glass: the printed vias and arc feed elements exhibit a reflection coefficient minimum of –18 dB at 14.2 GHz, a –10 dB bandwidth of 12.8–16.2 GHz, and an 8 dBi peak gain with 37° beam tilt, closely matching full-wave predictions. This physics-driven, all-in-one EHD approach provides a scalable route to high-performance, glass-integrated RF devices and transparent electronics. Full article
15 pages, 5997 KiB  
Article
Novel 3D Capacitors: Integrating Porous Nickel-Structured and Through-Glass-Via-Fabricated Capacitors
by Baichuan Zhang, Libin Gao, Hongwei Chen and Jihua Zhang
Nanomaterials 2025, 15(11), 819; https://doi.org/10.3390/nano15110819 - 28 May 2025
Viewed by 405
Abstract
In this research work, two distinct types of three-dimensional (3D) capacitors were successfully fabricated, each with its own unique features and advantages. The first type of capacitor is centered around a 3D nanoporous structure. This structure is formed on a nickel substrate through [...] Read more.
In this research work, two distinct types of three-dimensional (3D) capacitors were successfully fabricated, each with its own unique features and advantages. The first type of capacitor is centered around a 3D nanoporous structure. This structure is formed on a nickel substrate through anodic oxidation. After undergoing high-temperature thermal oxidation, a monolithic Ni-NiO-Pt metal–insulator–metal (MIM) capacitor with a nanoporous dielectric architecture is achieved. Structurally, this innovative design brings about several remarkable benefits. Due to the nanoporous structure, it has a significantly increased surface area, which can effectively store more charges. As a result, it exhibits an equivalent capacitance density of 69.95 nF/cm2, which is approximately 18 times higher than that of its planar, non-porous counterpart. This high capacitance density enables it to store more electrical energy in a given volume, making it highly suitable for applications where miniaturization and high energy storage in a small space is crucial. The second type of capacitor makes use of Through-Glass Via (TGV) technology. This technology is employed to create an interdigitated blind-via array within a glass substrate, attaining an impressively high aspect ratio of 22.5:1 (with a via diameter of 20 μm and a depth of 450 μm). By integrating atomic layer deposition (ALD), a conformal interdigital electrode structure is realized. Glass, as a key material in this capacitor, has outstanding insulating properties. This characteristic endows the capacitor with a high breakdown field strength exceeding 8.2 MV/cm, corresponding to a withstand voltage of 5000 V. High breakdown field strength and withstand voltage mean that the capacitor can handle high-voltage applications without breaking down easily, which is essential for power-intensive systems like high-voltage power supplies and some high-power pulse-generating equipment. Moreover, due to the low-loss property of glass, the capacitor can achieve an energy conversion efficiency of up to 95%. Such a high energy conversion efficiency ensures that less energy is wasted during the charge–discharge process, which is highly beneficial for energy-saving applications and systems that require high-efficiency energy utilization. Full article
(This article belongs to the Section Nanoelectronics, Nanosensors and Devices)
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21 pages, 13910 KiB  
Article
Modeling and Simulation for Predicting Thermo-Mechanical Behavior of Wafer-Level Cu-PI RDLs During Manufacturing
by Xianglong Chu, Shitao Wang, Chunlei Li, Zhizhen Wang, Shenglin Ma, Daowei Wu, Hai Yuan and Bin You
Micromachines 2025, 16(5), 582; https://doi.org/10.3390/mi16050582 - 15 May 2025
Viewed by 902
Abstract
The development of chip manufacturing and advanced packaging technologies has significantly changed redistribution layers (RDLs), leading to shrinking line width/spacing, increasing the number of build-up layers and package size, and introducing organic materials such as polyimide (PI) for dielectrics. The fineness and complexity [...] Read more.
The development of chip manufacturing and advanced packaging technologies has significantly changed redistribution layers (RDLs), leading to shrinking line width/spacing, increasing the number of build-up layers and package size, and introducing organic materials such as polyimide (PI) for dielectrics. The fineness and complexity of structures, combined with the temperature-dependent and viscoelastic properties of organic materials, make it increasingly difficult to predict the thermo-mechanical behavior of wafer-level Cu-PI RDL structures, posing a severe challenge in warpage prediction. This study models and simulates the thermo-mechanical response during the manufacturing process of Cu-PI RDL at the wafer level. A cross-scale wafer-level equivalent model was constructed using a two-level partitioning method, while the PI material properties were extracted via inverse fitting based on thermal warpage measurements. The warpage prediction results were compared against experimental data using the maximum warpage as the indicator to validate the extracted PI properties, yielding errors under less than 10% at typical process temperatures. The contribution of RDL build-up, wafer backgrinding, chemical mechanical polishing (CMP), and through-silicon via (TSV)/through-glass via (TGV) interposers to the warpage was also analyzed through simulation, providing insight for process risk evaluation. Finally, an artificial neural network was developed to correlate the copper ratios of four RDLs with the wafer warpages for a specific process scenario, demonstrating the potential for wafer-level warpage control through copper ratio regulation in RDLs. Full article
(This article belongs to the Special Issue 3D Integration: Trends, Challenges and Opportunities)
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12 pages, 4856 KiB  
Article
Substrate Integrated Waveguide on Glass with Vacuum-Filled Tin Through Glass Vias for Millimeter-Wave Applications
by Seung-Han Chung, Ho-Sun Yeom, Che-Heung Kim, Yong-Kweon Kim, Seung-Ki Lee, Chang-Wook Baek and Jae-Hyoung Park
Micromachines 2025, 16(1), 12; https://doi.org/10.3390/mi16010012 - 26 Dec 2024
Cited by 1 | Viewed by 1399
Abstract
This paper presents a novel approach to fabricate substrate integrated waveguides (SIWs) on glass substrates with tin (Sn) through glass vias (TGVs) tailored for millimeter-wave applications. The fabrication process employs a custom-designed vacuum suctioning system to rapidly fill precise TGV holes in the [...] Read more.
This paper presents a novel approach to fabricate substrate integrated waveguides (SIWs) on glass substrates with tin (Sn) through glass vias (TGVs) tailored for millimeter-wave applications. The fabrication process employs a custom-designed vacuum suctioning system to rapidly fill precise TGV holes in the glass substrate, which are formed by wafer-level glass reflow micromachining techniques with molten tin in a minute. This method offers a very fast and cost-effective alternative for complete via filling without voids compared to the conventional metallization techniques such as electroplating or sputtering. An SIW with a 3-dB cutoff frequency of 17.2 GHz was fabricated using the proposed process. The fabricated SIW shows an average insertion loss of 1.65 ± 0.54 dB across the 20–35 GHz range. These results highlight the potential of glass substrates with tin TGVs for fabricating millimeter-wave devices. Full article
(This article belongs to the Special Issue Microwave Passive Components, 2nd Edition)
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23 pages, 10188 KiB  
Article
Sparse-View Spectral CT Reconstruction Based on Tensor Decomposition and Total Generalized Variation
by Xuru Li, Kun Wang, Xiaoqin Xue and Fuzhong Li
Electronics 2024, 13(10), 1868; https://doi.org/10.3390/electronics13101868 - 10 May 2024
Cited by 1 | Viewed by 1353
Abstract
Spectral computed tomography (CT)-reconstructed images often exhibit severe noise and artifacts, which compromise the practical application of spectral CT imaging technology. Methods that use tensor dictionary learning (TDL) have shown superior performance, but it is difficult to obtain a high-quality pre-trained global tensor [...] Read more.
Spectral computed tomography (CT)-reconstructed images often exhibit severe noise and artifacts, which compromise the practical application of spectral CT imaging technology. Methods that use tensor dictionary learning (TDL) have shown superior performance, but it is difficult to obtain a high-quality pre-trained global tensor dictionary in practice. In order to resolve this problem, this paper develops an algorithm called tensor decomposition with total generalized variation (TGV) for sparse-view spectral CT reconstruction. In the process of constructing tensor volumes, the proposed algorithm utilizes the non-local similarity feature of images to construct fourth-order tensor volumes and uses Canonical Polyadic (CP) tensor decomposition instead of pre-trained tensor dictionaries to further explore the inter-channel correlation of images. Simultaneously, introducing the TGV regularization term to characterize spatial sparsity features, the use of higher-order derivatives can better adapt to different image structures and noise levels. The proposed objective minimization model has been addressed using the split-Bregman algorithm. To assess the performance of the proposed algorithm, several numerical simulations and actual preclinical mice are studied. The final results demonstrate that the proposed algorithm has an enormous improvement in the quality of spectral CT images when compared to several existing competing algorithms. Full article
(This article belongs to the Special Issue Pattern Recognition and Machine Learning Applications, 2nd Edition)
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14 pages, 5207 KiB  
Article
A Sensitivity-Enhanced Vertical-Resonant MEMS Electric Field Sensor Based on TGV Technology
by Yahao Gao, Simin Peng, Xiangming Liu, Yufei Liu, Wei Zhang, Chunrong Peng and Shanhong Xia
Micromachines 2024, 15(3), 356; https://doi.org/10.3390/mi15030356 - 29 Feb 2024
Cited by 7 | Viewed by 2363
Abstract
In order to enhance the sensitivity of wafer-level vacuum-packaged electric field sensors, this paper proposed a vertical-resonant MEMS electric field sensor based on TGV (Through Glass Via) technology. The microsensor is composed of the electric field sensing cover, the drive cover, and the [...] Read more.
In order to enhance the sensitivity of wafer-level vacuum-packaged electric field sensors, this paper proposed a vertical-resonant MEMS electric field sensor based on TGV (Through Glass Via) technology. The microsensor is composed of the electric field sensing cover, the drive cover, and the SOI-based microstructures between them. TGV technology is innovatively used to fabricate the electric field sensing cover and the vertically-driven cover. The external electric field is concentrated and transmitted to the area below the silicon plate in the center of the electric field sensing cover through a metal plate and a metal pillar, reducing the coupling capacitance between the silicon plate and the packaging structure, thereby achieving the enhanced transmission of the electric field. The sensitivity-enhanced mechanism of the sensor is analyzed, and the key parameters of the sensor are optimized through finite element simulation. The fabrication process is designed and realized. A prototype is tested to characterize its performance. The experimental results indicate that the sensitivity of the sensor is 0.82 mV/(kV/m) within the electrostatic electric field ranging from 0–50 kV/m. The linearity of the sensor is 0.65%. Full article
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10 pages, 2264 KiB  
Article
The Effects of Etchant on via Hole Taper Angle and Selectivity in Selective Laser Etching
by Jonghyeok Kim, Byungjoo Kim, Jiyeon Choi and Sanghoon Ahn
Micromachines 2024, 15(3), 320; https://doi.org/10.3390/mi15030320 - 25 Feb 2024
Cited by 6 | Viewed by 3313
Abstract
This research focuses on the manufacturing of a glass interposer that has gone through glass via (TGV) connection holes. Glass has unique properties that make it suitable for 3D integrated circuit (IC) interposers, which include low permittivity, high transparency, and adjustable thermal expansion [...] Read more.
This research focuses on the manufacturing of a glass interposer that has gone through glass via (TGV) connection holes. Glass has unique properties that make it suitable for 3D integrated circuit (IC) interposers, which include low permittivity, high transparency, and adjustable thermal expansion coefficient. To date, various studies have suggested numerous techniques to generate holes in glass. In this study, we adopt the selective laser etching (SLE) technique. SLE consists of two processes: local modification via an ultrashort pulsed laser and chemical etching. In our previous study, we found that the process speed can be enhanced by changing the local modification method. For further enhancement in the process speed, in this study, we focus on the chemical etching process. In particular, we try to find a proper etchant for TGV formation. Here, four different etchants (HF, KOH, NaOH, and NH4F) are compared in order to improve the etching speed. For a quantitative comparison, we adopt the concept of selectivity. The results show that NH4F has the highest selectivity; therefore, we can tentatively claim that it is a promising candidate etchant for generating TGV. In addition, we also observe a taper angle variation according to the etchant used. The results show that the taper angle of the hole is dependent on the concentration of the etchant as well as the etchant itself. These results may be applicable to various industrial fields that aim to adjust the taper angle of holes. Full article
(This article belongs to the Special Issue Recent Advances in Micro/Nano-Fabrication)
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21 pages, 4298 KiB  
Review
Application of Through Glass Via (TGV) Technology for Sensors Manufacturing and Packaging
by Chen Yu, Shaocheng Wu, Yi Zhong, Rongbin Xu, Tian Yu, Jin Zhao and Daquan Yu
Sensors 2024, 24(1), 171; https://doi.org/10.3390/s24010171 - 28 Dec 2023
Cited by 32 | Viewed by 19015
Abstract
Glass has emerged as a highly versatile substrate for various sensor and MEMS packaging applications, including electromechanical, thermal, optical, biomedical, and RF devices, due to its exceptional properties such as high geometrical tolerances, outstanding heat and chemical resistance, excellent high-frequency electrical properties, and [...] Read more.
Glass has emerged as a highly versatile substrate for various sensor and MEMS packaging applications, including electromechanical, thermal, optical, biomedical, and RF devices, due to its exceptional properties such as high geometrical tolerances, outstanding heat and chemical resistance, excellent high-frequency electrical properties, and the ability to be hermetically sealed. In these applications, Through Glass Via (TGV) technology plays a vital role in manufacturing and packaging by creating electrical interconnections through glass substrates. This paper provides a comprehensive summary of the research progress in TGV fabrication along with its integrations, including through via formation and metallization. This paper also reviews the significant qualification and reliability achievements obtained by the scientific community for TGV technology. Additionally, this paper summarizes the application of TGV technology in various sensors such as MEMS sensors and discusses the potential applications and future development directions of TGV technology. Full article
(This article belongs to the Special Issue Advanced Sensors in MEMS)
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23 pages, 2326 KiB  
Article
A Fractional-Order Fidelity-Based Total Generalized Variation Model for Image Deblurring
by Juanjuan Gao, Jiebao Sun, Zhichang Guo and Wenjuan Yao
Fractal Fract. 2023, 7(10), 756; https://doi.org/10.3390/fractalfract7100756 - 13 Oct 2023
Viewed by 1597
Abstract
Image deblurring is a fundamental image processing task, and research for efficient image deblurring methods is still a great challenge. Most of the currently existing methods are focused on TV-based models and regularization term construction; little efforts are paid to model proposal and [...] Read more.
Image deblurring is a fundamental image processing task, and research for efficient image deblurring methods is still a great challenge. Most of the currently existing methods are focused on TV-based models and regularization term construction; little efforts are paid to model proposal and correlated algorithms for the fidelity term in fractional-order derivative space. In this paper, we propose a novel fractional-order variational model for image deblurring, which can efficiently address three different blur kernels. The objective functional contains a fractional-order gradient fidelity term and a total generalized variation (TGV) regularization term, and it highlights the ability to preserve details and eliminate the staircase effect. To solve the problem efficiently, we provide two numerical algorithms based on the Chambolle-Pock primal-dual method (PD) and the alternating direction method of multipliers (ADMM). A series of experiments show that the proposed method achieves a good balance between detail preservation and deblurring compared with several existing advanced models. Full article
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24 pages, 12664 KiB  
Article
Electrical Performance Analysis of High-Speed Interconnection and Power Delivery Network (PDN) in Low-Loss Glass Substrate-Based Interposers
by Youngwoo Kim
Micromachines 2023, 14(10), 1880; https://doi.org/10.3390/mi14101880 - 29 Sep 2023
Cited by 2 | Viewed by 4970
Abstract
In this article, electrical performance analysis of high-speed interconnection and power delivery network (PDN) in low-loss glass substrate-based interposers is conducted considering signal integrity (SI) and power integrity (PI). The low-loss glass substrate is a superior alternative to silicon substrate in terms of [...] Read more.
In this article, electrical performance analysis of high-speed interconnection and power delivery network (PDN) in low-loss glass substrate-based interposers is conducted considering signal integrity (SI) and power integrity (PI). The low-loss glass substrate is a superior alternative to silicon substrate in terms of high-speed signaling and fabrication yield. However, the low-loss of the substrate is vulnerable to power/ground noise in the PDN since the low-loss property of the substrate cannot suppress the noise naturally. In this article, an in-depth electrical performance analysis is conducted based on various measurements and simulations to fully benefit the advantages of the low-loss glass substrate. First, the fabrication process and test vehicles for the analysis are explained. Using the test vehicles, the electrical performance of the glass interposer’s high-speed interconnection is compared with those of silicon and organic interposers. The insertion loss, eye-diagrams, and signal bandwidths of three interposer channels are compared and analyzed based on electromagnetic (EM) and circuit simulations. Also, the electrical performance of the through glass via (TGV) channel is measured and compared with through silicon via (TSV) channel. The high-speed interconnection of the glass interposer showed better performance for most of the parameters which is more suitable for maintaining the SI. Even though the low-loss of the glass substrate ensured the SI, power/ground noise issues in the PDN must be analyzed and solved. In this article, various cases inducing the power/ground noise in the PDN are considered, simulated, and measured. To solve the issues, ground TGV design and electromagnetic bandgap (EBG) design are proposed for an efficient broadband suppression of the noise generated in the glass interposer PDN. Full article
(This article belongs to the Special Issue Microelectronics Assembly and Packaging: Materials and Technologies)
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10 pages, 5014 KiB  
Article
Study of Through Glass Via (TGV) Using Bessel Beam, Ultrashort Two-Pulses of Laser and Selective Chemical Etching
by Jonghyeok Kim, Sungil Kim, Byungjoo Kim, Jiyeon Choi and Sanghoon Ahn
Micromachines 2023, 14(9), 1766; https://doi.org/10.3390/mi14091766 - 14 Sep 2023
Cited by 8 | Viewed by 6999
Abstract
Selective laser etching is a promising candidate for the mass production of glass interposers. It comprises two steps: local modification by an ultrashort-pulsed laser and chemical etching of the modified volume. According to previous studies, when an ultrashort-pulsed laser beam is irradiated on [...] Read more.
Selective laser etching is a promising candidate for the mass production of glass interposers. It comprises two steps: local modification by an ultrashort-pulsed laser and chemical etching of the modified volume. According to previous studies, when an ultrashort-pulsed laser beam is irradiated on the sample, electron excitation occurs, followed by phonon vibration. In general, the electron excitation occurs for less than a few tens of picoseconds and phonon vibration occurs for more than 100 picoseconds. Thus, in order to compare the electric absorption and thermal absorption of photons in the commercial glass, we attempt to implement an additional laser pulse of 213 ps and 10 ns after the first pulse. The modified glass sample is etched with 8 mol/L KOH solution with 110 °C to verify the effect. Here, we found that the electric absorption of photons is more effective than the thermal absorption of them. We can claim that this result helps to enhance the process speed of TGV generation. Full article
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15 pages, 4826 KiB  
Article
Layout Dependence Stress Investigation in through Glass via Interposer Architecture Using a Submodeling Simulation Technique and a Factorial Design Approach
by Shih-Hung Wang, Wensyang Hsu, Yan-Yu Liou, Pei-Chen Huang and Chang-Chun Lee
Micromachines 2023, 14(8), 1506; https://doi.org/10.3390/mi14081506 - 27 Jul 2023
Viewed by 3020
Abstract
The multi-chiplet technique is expected to be a promising solution to achieve high-density system integration with low power consumption and high usage ratio. This technique can be integrated with a glass interposer to accomplish a competitive low fabrication cost compared with the silicon-based [...] Read more.
The multi-chiplet technique is expected to be a promising solution to achieve high-density system integration with low power consumption and high usage ratio. This technique can be integrated with a glass interposer to accomplish a competitive low fabrication cost compared with the silicon-based interposer architecture. In this study, process-oriented stress simulation is performed by the element activation and deactivation technique in finite element analysis architecture. The submodeling technique is also utilized to mostly conquer the scale mismatch and difficulty in mesh gridding design. It is also used to analyze the thermomechanical responses of glass interposers with chiplet arrangements and capped epoxy molding compounds (EMC) during curing. A three-factor, three-level full factorial design is applied using the analysis of variance method to explore the significance of various structural design parameters for stress generation. Analytic results reveal that the maximum first principal stresses of 130.75 and 17.18 MPa are introduced on the sidewall of Cu-filled via and the bottom of the glass interposer, respectively. Moreover, the EMC thickness and through glass via pitch are the dominant factors in the adopted vehicle. They significantly influence the stress magnitude during heating and cooling. Full article
(This article belongs to the Special Issue Microelectronics Assembly and Packaging: Materials and Technologies)
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34 pages, 12463 KiB  
Review
Research of Vertical via Based on Silicon, Ceramic and Glass
by Wenchao Tian, Sixian Wu and Wenhua Li
Micromachines 2023, 14(7), 1391; https://doi.org/10.3390/mi14071391 - 8 Jul 2023
Cited by 15 | Viewed by 6723
Abstract
With the increasing demand for high-density integration, low power consumption and high bandwidth, creating more sophisticated interconnection technologies is becoming increasingly crucial. Three-dimensional (3D) integration technology is known as the fourth-generation packaging technology beyond Moore’s Law because of its advantages of low energy [...] Read more.
With the increasing demand for high-density integration, low power consumption and high bandwidth, creating more sophisticated interconnection technologies is becoming increasingly crucial. Three-dimensional (3D) integration technology is known as the fourth-generation packaging technology beyond Moore’s Law because of its advantages of low energy consumption, lightweight and high performance. Through-silicon via (TSV) is considered to be at the core of 3D integration because of its excellent electrical performance, lower power consumption, wider bandwidth, higher density, smaller overall size and lighter weight. Therefore, the particular emphasis of this review is the process flow of TSV technology. Among them, the research status of TSV hole etching, deep hole electroplating filling and chemical mechanical planarization (CMP) in TSV preparation process are introduced in detail. There are a multitude of inevitable defects in the process of TSV processing; thus, the stress problems and electrical characteristics that affect the reliability of TSV are summarized in this review. In addition, the process flow and process optimization status of through ceramic via (TCV) and through glass via (TGV) are discussed. Full article
(This article belongs to the Special Issue Advanced Packaging for Microsystem Applications, 2nd Edition)
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13 pages, 31989 KiB  
Article
Designing a Turning Guide Vane Using CFD for an Economizer of a Non-Furnace Boiler
by Chaerul Qalbi AM and Joon Ahn
Processes 2023, 11(6), 1617; https://doi.org/10.3390/pr11061617 - 25 May 2023
Cited by 1 | Viewed by 2885
Abstract
Non-furnace boilers can improve the efficiency of industrial once-through boilers. However, temperature non-uniformity occurs in the economizer connected vertically to the boiler. Heat transfer performance is degraded by temperature non-uniformity. To solve this problem, a corbel was installed on the side wall of [...] Read more.
Non-furnace boilers can improve the efficiency of industrial once-through boilers. However, temperature non-uniformity occurs in the economizer connected vertically to the boiler. Heat transfer performance is degraded by temperature non-uniformity. To solve this problem, a corbel was installed on the side wall of the economizer, and a baffle was installed on the transition duct. Consequently, although the thermal efficiency of the boiler was improved, significant temperature non-uniformity was still observed in the area upstream of the economizer. To address this issue, this study designed a turning guide vane (TGV) at the economizer inlet using computational fluid dynamics (CFD). First, CFD was performed for a case without a guide vane and a case with an existing baffle installed. By analyzing the streamlines obtained using CFD, two TGV designs were proposed. In the first design, guide vanes were installed along the desired streamline, and the concept of the existing TGV was followed. In the second design, an attempt was made to minimize the pressure drop by arranging guide vanes at the inlet. Both designs reduced the standard deviation of temperature by more than 30% and improved the volume goodness factor by 25%. Full article
(This article belongs to the Section Manufacturing Processes and Systems)
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8 pages, 6274 KiB  
Communication
Extracting and Analyzing the S-Parameters of Vertical Interconnection Structures in 3D Glass Packaging
by Jinxu Liu, Jihua Zhang, Libin Gao and Hongwei Chen
Micromachines 2023, 14(4), 803; https://doi.org/10.3390/mi14040803 - 31 Mar 2023
Cited by 14 | Viewed by 2561
Abstract
In order to effectively employ through-glass vias (TGVs) for high-frequency software package design, it is crucial to accurately characterize the S-parameters of vertical interconnection structures in 3D glass packaging. A methodology is proposed for the extraction of precise S-parameters using the transmission matrix [...] Read more.
In order to effectively employ through-glass vias (TGVs) for high-frequency software package design, it is crucial to accurately characterize the S-parameters of vertical interconnection structures in 3D glass packaging. A methodology is proposed for the extraction of precise S-parameters using the transmission matrix (T-matrix) to analyze and evaluate the insertion loss (IL) and reliability of TGV interconnections. The method presented herein enables the handling of a diverse range of vertical interconnections, encompassing micro-bumps, bond-wires, and a variety of pads. Additionally, a test structure for coplanar waveguide (CPW) TGVs is constructed, accompanied by a comprehensive description of the equations and measurement procedure employed. The outcomes of the investigation demonstrate a favorable concurrence between the simulated and measured results, with analyses and measurements conducted up to 40 GHz. Full article
(This article belongs to the Special Issue Advanced Interconnect and Packaging, 2nd Edition)
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