Search Results (66)

Thin-film encapsulation has been a critical method to realize small-size OLED displays. However, the manufacturing of large-size flexible OLED is still in the preparatory phase prior to commercialization, which entails more rigorous demands for reliability and flexibility with regard to thin-film encapsulation. This review, from the perspective of engineering for mass production, addresses the development of thin-film encapsulation and its three core properties for comprehensive validation while engineering, including basic properties, reliability, and compatibility. Moreover, considering the prospective evolution of display products, the review on novel thin-film encapsulation was conducted to evaluate the potential engineering value for thinning, ultra-flexibility, multifunctionality, novel equipment, and emerging technology. It is anticipated that some of the aforementioned technologies may prove to be of significant engineering value. It is therefore hoped that by comprehensive engineering verification, the commercial application of novel thin-film encapsulation can be promoted and the competitiveness of OLED products can be effectively enhanced. Full article

The thermal behavior of a three-layer structure—glass/ITO/TAPC/CBP/BPhen—in an OLED system was investigated using in situ spectroscopic ellipsometry during controlled heating from room temperature to 120 °C over 60 min, simulating the ageing process and analyzing degradation kinetics. Variations in Ψ and Δ spectra were observed across the entire 0.7–5.9 eV spectral range, with five distinct anomalies, particularly in the UV region. An anomaly at approximately 66 °C was attributed to the glass transition temperature T_g of BPhen, while another two at around 82 °C and at around 112 °C corresponded to the first-order phase transition of TAPC and T_g of CBP, respectively. The origins of the remaining anomalies at 91 °C and 112 °C were explored in this study, with a focus on interphase layer formation and morphological changes that emerge during heating. These findings provide insights into the stability of OLEDs under thermal stress. Full article

The advancement of portable high-definition organic light-emitting diode (OLED) displays necessitates thin film transistors (TFTs) with low power consumption and high pixel density. Amorphous indium gallium zinc oxide (a-IGZO) TFTs are promising candidates to meet these requirements. However, conventional silicon dioxide gate insulators provide limited channel modulation due to their low dielectric constant, while alternative high-k dielectrics often suffer from high leakage currents and poor surface quality. Plasma-enhanced atomic layer deposition (PEALD) enables the atomic-level control of film thickness, resulting in high-quality films with superior conformality and uniformity. In this work, a systematic investigation was conducted on the properties of HfO₂ films and the electrical characteristics of a-IGZO TFTs with different HfO₂ thicknesses. A Vth of −0.9 V, μ_sat of 6.76 cm²/Vs, SS of 0.084 V/decade, and I_on/I_off of 1.35 × 10⁹ are obtained for IGZO TFTs with 40 nm HfO₂. It is believed that the IGZO TFTs based on a HfO₂ gate insulating layer and prepared by PEALD can improve electrical performance. Full article

Pixel circuits are key components of flat panel displays, including liquid crystal displays (LCDs), organic light-emitting diode displays (OLEDs), and micro light-emitting diode displays (micro-LEDs). Depending on the active layer material of the thin film transistor (TFT), pixel circuits are categorised into amorphous silicon (a-Si) technology, low-temperature polycrystalline silicon (LTPS) technology, metal oxide (MO) technology, and low-temperature polycrystalline silicon and oxide (LTPO) technology. In this review, we outline the fundamental display principles and four major TFT technologies, covering conventional single-gated TFTs to novel two-gated TFTs. We focus on novel pixel circuits for three glass-based display technologies with additional mention of pixel circuits for silicon-based OLED and silicon-based micro-LED. Full article

Organic Light Emitting Diode (OLED) technology is preferred in modern display applications due to its superior efficiency, color quality, and flexibility. It also carries a high potential of applicability in military displays where emission color tuning is required for MIL-STD-3009 Night Vision Imaging Systems (NVISs), as compatibility is critical. Herein, we report the effects of different OLED device layer materials and thicknesses such as the hole injection layer (HIL), hole transport layer (HTL), and electron transport layer (ETL) on the color coordinates, luminance, and efficiency of OLED devices designed for night vision (NVIS) compatibility. In this study, simulation tools like SETFOS^® (Semi-conducting Emissive Thin Film Optics Simulator), MATLAB^®, and LightTools^® (Illumination Design Software) were used to verify and validate the luminance, luminance efficiency, and chromaticity coordinates of the proposed NVIS-OLED devices. We modeled the OLED device using SETFOS^®, then the selection of materials for each layer for an optimal electron–hole balance was performed in the same tool. The effective reflectivity of multiple OLED layers was determined in MATLAB^® in addition to an optimal device efficiency calculation in SETFOS^®. The optical validation of output luminance and luminous efficiency was performed in LightTools^®. Through a series of simulations for a green-emitting OLED device, we observed significant shifts in color coordinates, particularly towards the yellow spectrum, when the ETL materials and their thicknesses varied between 1 nm and 200 nm, whereas a change in the thickness of the HIL and HTL materials had a negligible impact on the color coordinates. While the critical role of ETL in color tuning and the emission characteristics of OLEDs is highlighted, our results also suggested a degree of flexibility in material selection for the HIL and HTL, as they minimally affected the color coordinates of emission. We validated via a combination of SETFOS^®, MATLAB^®, and LightTools^® that when the ETL (3TPYMB) material thickness is optimized to 51 nm, the cathode reflectivity via the ETL-EIL stack became the minimum enabling output luminance of 3470 cd/m2 through our emissive layer within the Glass/ITO/MoO₃/TAPC/(CBP:Ir(ppy)₃)/3TPYMB/LiF/Aluminum OLED stack architecture, also yielding 34.73 cd/A of current efficiency under 10 mA/cm² of current density. We infer that when stack layer thicknesses are optimized with respect to their reflectivity properties, better performances are achieved. Full article

Metal oxide semiconductors, such as indium gallium zinc oxide (IGZO), have attracted significant attention from researchers in the fields of liquid crystal displays (LCDs) and organic light-emitting diodes (OLEDs) for decades. This interest is driven by their high electron mobility of over ~10 cm²/V·s and excellent transmittance of more than ~80%. Amorphous IGZO (a-IGZO) offers additional advantages, including compatibility with various processes and flexibility making it suitable for applications in flexible and wearable devices. Furthermore, IGZO-based thin-film transistors (TFTs) exhibit high uniformity and high-speed switching behavior, resulting in low power consumption due to their low leakage current. These advantages position IGZO not only as a key material in display technologies but also as a candidate for various next-generation electronic devices. This review paper provides a comprehensive overview of IGZO-based electronics, including applications in gas sensors, biosensors, and photosensors. Additionally, it emphasizes the potential of IGZO for implementing logic gates. Finally, the paper discusses IGZO-based neuromorphic devices and their promise in overcoming the limitations of the conventional von Neumann computing architecture. Full article

In active-matrix organic light-emitting diode (AMOLED) displays, conventional pixel circuits that compensate for the non-uniformity of the threshold voltage (V_T) of low-temperature polycrystalline silicon thin-film transistors (TFTs) can hardly compensate for variations in other TFT parameters, such as carrier mobility (μ₀), subthreshold swing (SS) and the various effects of parasitic capacitance. In recent high-resolution AMOLED displays, as the current required for OLED pixel driving decreases, the current error rate (CER) caused by the non-uniform TFT parameters increases. In this study, we analyzed the influence of each TFT parameter on the CER using SPICE simulation. Based on our analysis, the origin of the increased CER can be classified into two categories: the charging capability of driving TFT and the capacitive coupling effect of the switching TFT. The SS of the driving TFT and the parasitic capacitance of the switching TFT are major factors that affect the CER in terms of the charging capability and capacitive coupling effect, respectively. Our analysis results can be summarized as follows: The SS value of the driving TFT should be high, and its variation should be small to minimize the CER. The variation in the parasitic capacitance of the switching TFT possibly occurs due to long-term bias conditions, as well as process non-uniformity. Therefore, the stability of TFT should also be confirmed for the prevention of anomalous CER caused by long-term bias stress. Full article

Polyimide (PI) has been widely used as a flexible substrate in the OLED display industry to achieve folding and other functions. However, it has unintended side effects, such as friction-greening, a green screen phenomenon caused by friction after prolonged usage. This is related to drifting TFT characteristics caused by charge accumulating in the PI in combination with the high efficiency of green pixels. In this study, the mechanism of the influence of PI structure on friction-greening was investigated. Increasing the process temperature from 350 °C to 470 °C, the chain segment structure within the PI became more regularized. Thus, the material had higher conductivity and shallower trap energy levels, which was confirmed by X-ray small angle scattering, dielectric, photoluminescence, and other methods. Under prolonged discharge conditions, less charge accumulated within PI, thus effectively mitigating the threshold voltage drift of the thin-film transistor (TFT). These results will contribute to the further optimization of the process and the development of PI materials. Full article

This review provides a comprehensive overview of recent advancements in the synthesis, properties, and applications of organic materials in the optoelectronics sector. The study emphasizes the critical role of organic materials in the development of state-of-the-art optoelectronic devices such as organic solar cells, organic thin-film transistors, and OLEDs. The review further examines the structure, operational principles, and performance metrics of organic optoelectronic devices. Organic materials have emerged as promising candidates due to their low-cost production and potential for large-area or flexible substrate applications. Additionally, this review highlights the physical mechanisms governing the optoelectronic properties of high-performance organic materials, particularly photoinduced processes relevant to charge carrier photogeneration. It discusses the unique benefits of organic materials over traditional inorganic materials, including their light weight, simple processing, and flexibility. The report delves into the challenges related to stability, scalability, and performance, while highlighting the wide range of electronic properties exhibited by organic materials, which are critical for their performances in optoelectronic devices. Furthermore, it addresses the need for further research and development in this field to achieve consistent performance across different types of devices. Full article

Solution-processable hole-transporting materials (HTMs) that form highly soluble films and thermally stable amorphous states are essential for advancing optoelectronic devices. However, the currently commercialized HTM, N,N-bis(3-methylphenyl)-N,N0-bis(phenyl)benzidine (TPD), exhibits poor solubility and limited carrier transport when spin-coated into thin films. Herein, to address these issues, a fluorenyl group was ingeniously incorporated into a series of molecules structurally similar to TPD. The resulting compounds, namely, 2,7-di-(N,N-diphenylamino)-9,9-dimethyl-9H-fluorene (DDF), 2,7-di-p-tolyl-(N,N-diphenylamino)-9,9-dimethyl-9H-fluorene (2M-DDF), and 2,7-di-tetra-p-tolyl-(N,N-diphenylamino)-9,9-dimethyl-9H-fluorene (4M-DDF), offered tunable energy levels, carrier transport, crystallinity, and steric configuration via adjustment of the number of terminal methyl groups. Owing to its satisfactory performance, 2M-DDF can serve as an effective alternative to TPD in OLED devices as well as a guest molecule in host–guest systems for long-afterglow materials. Devices incorporating 2M-DDF as the HTM, with an Alq₃ emitter, achieved a maximum CE of 4.78 cd/A and a maximum L (L_max) of 21,412 cd m⁻², with a turn-on voltage (V_on) of 3.8 V. The luminous efficiency of 2M-DDF was approximately five times that of TPD (4106 cd m⁻²). Furthermore, when 2M-DDF and TPD were utilized as guest molecules in afterglow materials, the afterglow duration of 2M-DDF (10 s) was 2.5 times that of TPD (4 s). This study provides a theoretical basis for the development of high-performance HTMs and long-afterglow materials, establishing a framework for the application of fluorene-based compounds in emerging fields such as long-afterglow materials. Full article

Organic light-emitting diodes (OLEDs) have emerged as one of the dominant technologies in displays due to their high emission efficiency and low power consumption. However, the development of blue color emitters has fallen behind that of red and green emitters, posing challenges in achieving optimal efficiency, stability, and accessibility. In this context, thermally activated delayed fluorescence (TADF) emitters hold promise as a potential solution for cost-effective, exceptionally efficient, and stable blue OLEDs due to their potential high efficiency and stability. TADF is a principle where certain organic materials can efficiently convert both singlet and triplet excitons, theoretically achieving up to 100% internal quantum efficiency. This research focused on diphenyl sulfone derivatives with carbazole groups as TADF compounds. Quantum chemical calculations and photoluminescence properties show the potential TADF properties of the molecules. New materials exhibit glass transition temperatures that would classify them as molecular glasses. Depending on the structure of the molecule, the photoluminescence emission is in the blue or green spectral region. Organic light-emitting diodes were fabricated from neat thin films of emitters by the wet casting method. The best performance in the deep blue emission region was achieved by a device with a turn-on voltage of 4 V and a maximum brightness of 178 cd/m². In the blue-green emission region, the best performance was observed by an OLED with a turn-on voltage of 3.5 V, reaching a maximum brightness of 660 cd/m². Full article

Indium tin oxide (ITO) is a transparent conductive oxide (TCO) commonly used in the realization of optoelectronic devices needing at least a transparent electrode. In this work, ITO thin films were deposited on glass substrates by non-reactive RF magnetron sputtering, investigating the effects of power density, sputtering pressure, and substrate temperature on the electrical, optical, and structural properties of the as-grown films. High-quality films, in terms of crystallinity, transparency, and conductivity were obtained. The 120 nm thick ITO films grown at 225 °C under an argon pressure of 6.9 mbar and a sputtering power density of 2.19 W/cm² without post-annealing treatments in an oxidizing environment showed an optical transmittance near 90% at 550 nm and a resistivity of $2.10\times {10}^{-4}$ $\mathsf{\Omega }$ cm. This material was applied as the electrode of simple-structure organic light-emitting diodes (OLEDs). Full article

Organometallic complexes containing reactive alkali metals, such as lithium (Li), represent a promising material approach for electron injection layers and electron transport layers (EILs and ETLs) to enhance the performance of Organic Light-Emitting Diodes (OLEDs). 8-Quinolinolato Lithium (Liq) has shown remarkable potential as an EIL and ETL when conveyed in very thin films. Nevertheless, the deposition of nano-layers requires precise control over both thickness and morphology. In this work, we investigate the optical properties and morphological characteristics of Liq thin films deposited via Organic Vapor Phase Deposition (OVPD). Specifically, we present our methodology for analyzing the measured pseudodielectric function <ε(ω)> using Spectroscopic Ellipsometry (SE), alongside the nano-topography of evaporated Liq nano-layers using Atomic Force Microscopy (AFM). This information can contribute to the understanding of the functionality of this material, since ultra-thin Liq interlayers can significantly increase the operational stability of OLED architectures. Full article

Thin films of carbazole (Cz) derivatives are frequently used in organic electronics, such as organic light-emitting diodes (OLEDs). Because of the proximity of the Cz units, the excited-state relaxation in such films is complicated, as intermolecular pathways, such as singlet–singlet annihilation (SSA), kinetically compete with the emission. Here, we provide an investigation of two benchmark systems employing neat carbazole and 3,6-di-tert-butylcarbazole (t-Bu-Cz) films and also their thin film blends with poly(methyl methacrylate) (PMMA). These are investigated by a combination of atomic force microscopy (AFM), femtosecond and nanosecond transient absorption spectroscopy (fs-TA and ns-TA) and time-resolved fluorescence. Excitonic J-aggregate-type features are observed in the steady-state absorption and emission spectra of the neat films. The S₁ state shows a broad excited-state absorption (ESA) spanning the entire UV–Vis–NIR range. At high S₁ exciton number densities of about 4 × 10¹⁸ cm⁻³, bimolecular diffusive S₁–S₁ annihilation is found to be the dominant SSA process in the neat films with a rate constant in the range of 1–2 × 10⁻⁸ cm³ s⁻¹. SSA produces highly vibrationally excited molecules in the electronic ground state (S₀*), which cool down slowly by heat transfer to the quartz substrate. The results provide relevant photophysical insight for a better microscopic understanding of carbazole relaxation in thin-film environments. Full article

Luminous efficiency is a pivotal factor for assessing the performance of optoelectronic devices, wherein light loss caused by diverse factors is harvested and converted into the radiative mode. In this study, we demonstrate a nanoscale vacuum photonic crystal layer (nVPCL) for light extraction enhancement. A corrugated semi-transparent electrode incorporating a periodic hollow-structure array was designed through a simulation that utilizes finite-difference time-domain computational analysis. The corrugated profile, stemming from the periodic hollow structure, was fabricated using laser interference lithography, which allows the precise engineering of various geometrical parameters by controlling the process conditions. The semi-transparent electrode consisted of a 15 nm thick Ag film, which acted as the exit mirror and induced microcavity resonance. When applied to a conventional green organic light-emitting diode (OLED) structure, the optimized nVPCL-integrated device demonstrated a 21.5% enhancement in external quantum efficiency compared to the reference device. Further, the full width at half maximum exhibited a 27.5% reduction compared to that of the reference device, demonstrating improved color purity. This study presents a novel approach by applying a hybrid thin film electrode design to optoelectronic devices to enhance optical efficiency and color purity. Full article