Search Results (215)

Transparent conducting oxides and electron transport layers are central to optoelectronic devices, yet their interfacial electronic behavior remains strongly dependent on substrate chemistry, defect states, and surface potential alignment. Here, we compare ITO and FTO transparent electrodes coated with ZnO and TiO₂, combining ab initio simulations, surface potential mapping, Hall effect measurements, sheet resistance, microscopy, and optical spectroscopy. Density functional calculations show that both ITO and FTO behave as degenerately doped n-type transparent conducting oxides, but with distinct work functions, surface dipoles, and donor-state distributions, leading to different interfacial charge-transfer tendencies. ZnO- and TiO₂-coated substrates display markedly different temperature-dependent transport, including resistance hysteresis and carrier-type switching, with FTO-based heterojunctions showing more clearly defined transitions due to the greater thermal stability of FTO. Scanning Kelvin probe (SKP) measurements reveal that ZnO more effectively accepts electrons from ITO or FTO, whereas TiO₂ shows weaker electron accumulation and more resistive interfacial behavior. Optical measurements and HSE06-based simulations confirm that TiO₂ behaves as a wider-gap ultraviolet absorber, while ZnO exhibits a lower-energy absorption onset, with real spectra additionally shaped by substrate, thickness, scattering, and defect contributions. The results show that transparent conducting oxide substrates are active electronic participants, not passive supports, in ZnO- and TiO₂-based optoelectronic interfaces. Full article

The Co₄₀Fe₄₀B₂₀ alloy is a key magnetic material that combines high saturation magnetization with excellent soft magnetic properties, offering broad application prospects in fields such as spintronic devices, magnetic tunnel junctions, and tunnel magnetoresistive sensors. Hot pressing can be used to produce fine-grained, highly dense CoFeB alloys. However, there is currently a lack of systematic research on the intrinsic mechanisms by which the particle size of gas-atomized CoFeB powders and their non-equilibrium solidification microstructure regulate phase transformations, microstructural evolution, and densification behavior during hot pressing and sintering—particularly regarding the microstructural inheritance effects of powders with different particle sizes. To address this issue, this study used vacuum induction melting and gas atomization technology to prepare Co₄₀Fe₄₀B₂₀ pre-alloyed powders in three particle size ranges: <38 μm, 38–74 μm, and 74–154 μm. Under identical process parameters, corresponding bulk alloys were produced via vacuum hot-press sintering, and the effects of initial powder particle size on phase transformations and microstructural evolution in the sintered bodies were systematically investigated. Microstructural characterization revealed the complete phase evolution of the alloy from the non-equilibrium solidified powder state to the sintered equilibrium state. During hot-press sintering, the metastable (Fe,Co)₃B phase in the powder completely decomposed, transforming into a stable body-centered cubic bcc-(Fe,Co) phase and a bcc-(Fe,Co)₂B second phase. The dispersed (Fe,Co)₂B phase precipitated after sintering strongly inhibits grain boundary migration via the Zener pinning effect, effectively hindering grain growth and resulting in a uniform, fine-grained, equiaxed microstructure. In coarse powders, due to the presence of a portion of the (Fe,Co)₂B phase, this phase aggregates and grows during sintering, weakening the pinning effect and leading to abnormal grain growth. The Hall–Petch fine-grain strengthening effect resulting from grain refinement couples with and offsets the weakening of second-phase strengthening caused by second-phase coarsening, ultimately leading to sintered bodies prepared from powders of different particle sizes exhibiting similar macroscopic density and hardness properties. Full article

The ultra-wide bandgap semiconductor β-Ga₂O₃ is a promising material for next-generation optoelectronic systems and hybrid nanodevices. However, high interface state densities and anomalous trap-assisted leakage severely restrict its performance and signal transduction capabilities. To resolve these fundamental limitations, we investigated a two-dimensional h-BN interlayer to construct a high-quality heterogeneous metal/h-BN/β-Ga₂O₃ structure using experimentally calibrated Sentaurus TCAD simulations. Energy-band analysis and validated I–V simulations reveal that the low-dimensional h-BN interlayer reconstructs the interfacial barrier, suppresses interface-assisted recombination, and shifts the dominant carrier transport from thermionic emission to Fowler–Nordheim tunneling. These effects markedly reduce the interface-state density and effectively suppress the Shockley–Read–Hall recombination current, mechanisms that are critical for minimizing dark current and improving device sensitivity. After systematically examining the effects of key parameters on the electrical characteristics of this hybrid architecture, we quantify the tradeoff between threshold voltage and on-resistance using a comprehensive figure of merit. Specifically, our results indicate that maximum device efficiency is achieved only when an optimal h-BN thickness of 3.56–5.88 nm (10–17 atomic layers) is strategically integrated with the appropriate metal work function and semiconductor doping. Overall, this work suggests the potential advantage of 2D h-BN in mitigating the interfacial bottleneck of traditional β-Ga₂O₃ platforms, providing quantitative design guidelines and theoretical support for the heterogeneous integration of next-generation optoelectronic devices. Full article

Permalloy (Py) is a crucial component in spin nano-oscillators due to its excellent soft magnetic properties. Due to orbital angular momentum quenching, Py exhibits very low magnetic damping. It reduces intrinsic energy dissipation during precession, which is beneficial for lowering operational power consumption and enhancing the thermal stability of certain memory devices. But lower magnetic damping limits its application in fast-switching spintronic devices. Thus, in this work, the rare earth element Gd is introduced into Py to further enhance the spintronic performance of Py_100−xGd_x alloys. Through spin-torque ferromagnetic resonance measurements (ST-FMRs), the maximum spin Hall angle of the system was calculated to be 0.149 when x = 20, significantly exceeding that of 0.042 in the pure Py sample. Additionally, Gd doping significantly enhances the ability to modulate the magnitude of the linewidth. Also, as the Gd content in the alloy increased, the magnetic damping coefficient of the device gradually rose, reaching a peak in the sample with 17% Gd content. The maximum magnetic damping coefficient of the Py-Gd alloy was 0.051, representing an approximate 2.4-fold increase compared to that of pure Py. The findings of this study confirm that the use of rare-earth elements is highly effective in tuning the performance of spintronic devices and provide support for the development of highly efficient SOT devices. It is noted that the regulation of magnetic damping by Py-Gd holds significant implications for enhancing the magnetization switching speed of SOT devices and reducing the drive current density for microwave emission in spin nano-oscillators. Full article

The Zeta-Minimizer Theorem (ZMT) provides a complete deductive unification of statistical mechanics, number theory, helical geometry, thermodynamics, and electromagnetism from three primitive axioms alone. Starting with the non-proper Archimedean conical helix and the explicit covariant fugacity Hessian, the universal grand-partition function Z(s) is constructed via the integer-gear rule. This functorially invariant object yields gear occupations, Lyapunov exponents, and interaction parameters that govern all subsequent results. Interface matching and marginal stability λ_2,19 (x_2) = 0 trigger superconductivity at solid–fluid boundaries, while the categorical invariance of Z(s) produces exact magnetic and electric equilibrium curves. The Variational Reaction Rate Theorem then projects the framework onto dynamics, yielding Maxwell’s equations, demystified electrical units as helical torque quantities, and a complete classification of electronic phases. Phonons, Cooper pairing, the superconducting gap, and the full BCS correspondence follow without additional postulates. The same marginal-stability condition reproduces the Casimir effect, the Quantum Hall effect, and the entire 115-year experimental history of superconductivity. Generalization of interface matching to arbitrary solid–liquid pairs and introduction of Variational Anchor Cancellation (VAC) self-organizes a shielded superconducting layer. Finally, the first-principles engineering blueprint of the Radial Helical Gear Condenser (RHGC) delivers a modular, self-regulating device that engineers superconductivity at ambient or near-ambient temperature using only a radial pressure gradient and existing pipeline technology. All predictions are zero-parameter and fully deducible from the three axioms. Full article

In this study, the PV performance of Au/BSF/CTS/CdS/i-ZnO/ITO thin-film solar cell (TFC) structure was systematically investigated using SCAPS-1D software. The effects of several critical parameters, including interface defect density, recombination mechanisms, absorber defect density, operating temperature, parasitic resistances, and different back surface field (BSF) layers, were comprehensively analyzed. The SCAPS-1D software results reveal that the photovoltaic performance is highly sensitive to the defect density at the absorber layer interface. When the interface defect density increased from 10¹² cm⁻³ to 10¹⁶ cm⁻³, the open-circuit voltage ($V_{OC}$) decreased from approximately 0.68 V to 0.45 V, while the power conversion efficiency (PCE) declined from nearly 19% to about 7%. Similarly, an increase in absorber defect density enhanced the Shockley–Read–Hall recombination rate, thereby reducing carrier lifetime and significantly deteriorating PV parameters. The influence of radiative and Auger recombination ($B_{Auger}$) processes was also examined, revealing that higher recombination coefficients lead to substantial reductions in current density and efficiency due to increased carrier losses. Furthermore, the impact of parasitic resistances was evaluated, demonstrating that decrease the series resistance from 9.5 Ω·cm² to 0.5 Ω·cm² increased the fill factor ($FF$) from about 48% to nearly 78%, while the device efficiency improved to approximately 32%. In addition to these parameters, particular emphasis was placed on the investigation of different BSF materials to enhance back contact performance. Various BSF layers, including SnS, PbS, V₂O₅, and Sb₂S₃, were examined to improve band alignment and suppress minority carrier recombination at the rear interface. Among these materials, the SnS BSF layer provided the most favorable band alignment with the CTS absorber, leading to a notable improvement in PV parameters and increasing the efficiency to approximately 25%. Overall, the results demonstrate that optimizing defect densities, recombination mechanisms, parasitic resistances, and especially the selection of appropriate BSF materials plays a crucial role in improving the performance of CTS-based TFCs. Full article

Cobalt/copper (Co/Cu) multilayers are prototypical systems for giant magnetoresistance (GMR)-based spintronic devices, where interfacial quality and spin-dependent scattering critically determine performance. In this work, Co/Cu multilayers were fabricated by pulsed laser deposition (PLD) on SITAL ceramics, Si(100), and BK7 substrates, with 10, 20, and 40 bilayer repetitions, in order to elucidate the interplay between microstructure, interfacial diffusion, and magnetotransport properties. Systematic characterization combining atomic force microscopy (AFM), scanning electron microscopy (SEM), SIMS/SNMS depth profiling, vibrating sample magnetometry (VSM), and Hall effect measurements reveals that PLD enables controlled multilayer growth with low background roughness and well-defined periodic structures, despite the presence of characteristic particulates. A clear dependence of the GMR response on both bilayer number and substrate type is observed. Increasing the number of repetitions enhances spin-dependent scattering at Co/Cu interfaces, leading to a progressive increase in the magnetoresistance amplitude, reaching ~−14% for 40-period multilayers on SITAL substrates. This enhancement is attributed to the higher interface density and improved interfacial coherence, as confirmed by SIMS/SNMS analysis showing reduced interdiffusion in thicker stacks. In parallel, Hall effect measurements indicate a reduction in carrier density and an increase in carrier mobility with increasing multilayer thickness, consistent with improved charge transport stability. A pronounced substrate effect is demonstrated: SITAL-supported multilayers exhibit enhanced GMR sensitivity (up to ~44%·T⁻¹) due to increased diffuse spin-dependent scattering at rougher interfaces, whereas Si(100) substrates promote smoother growth, improved structural coherence, and more stable electronic transport. While sputtering typically enables smoother interfaces and higher GMR ratios, PLD offers enhanced flexibility in tailoring interfacial morphology and diffusion processes, which can lead to improved sensitivity under specific conditions. These results establish PLD as a versatile route for tailoring Co/Cu multilayers, enabling controlled optimization of the trade-off between sensitivity and structural quality for advanced spin-valve and magnetic sensor applications. Full article

The performance of single-photon avalanche diodes (SPADs) is highly dependent on the operating temperature, while traditional SPAD models neglect the self-heating effect induced by avalanche current during long-term device operation, leading to insufficient prediction accuracy. This paper proposes an electro-thermal coupled SPAD simulation model that self-consistently integrates the transient thermal effects of the avalanche process with temperature-dependent electrical parameters, including junction capacitance, breakdown voltage, impact ionization coefficients, and Shockley–Read–Hall (SRH) recombination rates. The complete electro-thermal coupled model is constructed based on Sentaurus-TCAD thermal simulation and Virtuoso circuit simulation and implemented via the Verilog-A language. Simulation results demonstrate that after the device operates for 100 μs under repeated avalanche-quenching processes, the self-heating effect causes a 0.34 V shift in breakdown voltage, increases the device dead time by 3.34 ps, and simultaneously reduces the photon detection probability and elevates the dark count rate. This study conducts a systematic investigation into the performance degradation mechanism of SPAD devices induced by the self-heating effect, laying a theoretical foundation at the device self-heating level for subsequent research on the electrothermal interaction between quenching circuits and device bodies. Full article

This study focuses on modelling the spatial dependence of airborne particle contamination using Response Surface Methodology (RSM), with consideration of its implications for technical cleanliness and employee health. The analysis is based on two measurement campaigns conducted in an industrial production hall, where particle concentrations were recorded across multiple size fractions using a TROTEC PC220 device. The results demonstrate that RSM effectively captures nonlinear relationships and spatial gradients, enabling the identification of local extrema and contamination hotspots. Statistical analysis confirmed a significant influence of spatial coordinates on particle concentration across all fractions, with finer particles exhibiting stronger spatial dependence, consistent with aerosol behaviour in indoor environments. Quadratic model terms revealed stable hotspot regions persisting even after corrective measures, indicating persistent contamination sources or structural factors. Residual analysis suggested additional unmodeled local sources or transport mechanisms. Based on the integration of RSM and multi-fraction analysis, a mechanistic contamination model (source–transport–receptor framework with deposition processes) is proposed, linking particle behaviour with surface contamination and potential human exposure. The approach enables data-driven, localised contamination control and supports optimisation of technical cleanliness and occupational health conditions. Full article

The multilayers of Ta/Pd/[CoFeB (0.3 nm)/Pd]×5/Pd films were fabricated by ultra-high-vacuum (UHV) magnetron sputtering and subsequently annealed at temperatures (T_A) ranging from 100 °C to 400 °C. The magnetic measurements were performed with the applied field oriented parallel and perpendicular to the film plane to evaluate the out-of-plane magnetic anisotropy (PMA). A maximum effective PMA energy density (K_eff) of ≈7.82 × 10⁵ erg/cc and a small out-of-plane saturation magnetisation (M_s⊥) were achieved at the optimal T_A. The evolution of PMA is associated with interfacial atomic migration and oxidation processes, as confirmed by X-ray photoelectron spectroscopy (XPS). Annealing at 300 °C initiates the formation of TaB and TaOB interfacial phases, whereas annealing at 400 °C promotes the enhanced growth of Ta₂O₅ and TaB, along with additional TaOB formation owing to increased oxygen migration. These thermally stable Ta–boride phases lead to pronounced modifications in the magnetic properties. Consequently, oxygen migration and interfacial reactions at elevated temperatures primarily alter the chemical states of the B 1s, Pd 3d, and Ta 4f orbitals, thereby influencing the PMA. The field-dependent electrical resistance (MR) study demonstrates that annealing at 100–400 °C optimises the anisotropic effect in the [CoFeB/Pd]×5-based multilayers. However, higher temperatures can trigger atomic intermixing, which degrades PMA strength and the resistance response. Moreover, the samples were further characterised by their structural, anomalous Hall effect (AHE) and magnetoresonance (MRO) properties. Overall, controlled T_A-driven oxygen diffusion and interfacial oxidation enable effective tuning of the PMA, MR, and MRO properties of ultrathin [CoFeB/Pd]×5 multilayers, highlighting their strong potential for spin–orbit torque (SOT), Dzyaloshinskii–Moriya interaction (DMI), and magnetic skyrmion-based spintronic devices. Full article

Silicon-compatible spintronic terahertz emitters (STEs) are crucial for on-chip ultrafast optoelectronic integration, yet their all-optical controllability remains a key challenge. Here, we fabricate a Ta-buffered CoFeB/Ir heterostructure on Si substrates and realize, for the first time, the enhancement and nonlinear modulation of coherent THz emission under continuous-wave (CW) optical pumping at room temperature. The THz emission, dominated by the inverse spin Hall effect, features an ultrabroad 0–2.5 THz bandwidth and robustness against femtosecond pump fluence and polarization variations. The all-optical modulation of THz generation originates from the competition between photothermal and photodoping effects in the Si substrate. The heterostructure-side pumping with a 450 nm CW laser yields an increased modulation of 46% at 2.546 W cm⁻² due to the photothermal effect, while the Si substrate-side pumping at 780 nm leads to 21.3% THz emission suppression by photodoping. Moreover, the THz enhanced modulation efficiency peaks at an Ir layer thickness of 1.2 nm. Our work demonstrates an all-optical controllable Si-based THz source, providing critical insights for the design of next-generation on-chip THz functional devices. Full article

This study investigates unsteady magnetohydrodynamic free convection flow past a rotating vertical plate embedded in a Darcy–Forchheimer porous medium. The formulation incorporates Hall current, thermal radiation, viscous dissipation, Joule heating, and an Arrhenius-type chemical reaction with activation energy to represent thermo-reactive transport in an electrically conducting fluid. The coupled nonlinear equations governing momentum, thermal energy, and species concentration are transformed into dimensionless form and solved numerically using the Crank–Nicolson scheme. Grid independence and validation tests confirm the accuracy and stability of the numerical procedure. The results show that electromagnetic forces, rotation, porous resistance, and thermo-reactive effects significantly influence wall shear stress, heat transfer, and mass transport. In particular, the interaction between magnetic field strength and Hall current alters near-wall transport behavior, highlighting the role of electromagnetic coupling in rotating porous systems. The study provides physical insight relevant to the design and analysis of transport processes in high-temperature energy systems, rotating reactors, and porous thermal management devices. Full article

Accurate measurement of streamflow is fundamental for water resources management, ecological conservation, flash flood early warning, and climate change impact studies. This study presents a proof of concept on the usage of Internet of Things (IoT) for automatic streamflow measurements using commercial off-the-shelf (COTS) hardware. The system is designed, implemented, and experimentally evaluated as a low-cost, solar-powered IoT device tailored to small-order streams and headwater tributaries. At its core is the Hall-effect YF-S201 flow sensor. Although primarily designed for closed-conduit applications, the sensor was tested in a controlled setup where stream water was diverted into a short pipe section, enabling continuous monitoring and calibration. This paper provides details on the design and validation of a low-cost (approximately 24 Euros), solar-powered streamflow measurement system based on a water flow sensor, using wireless communications, and cloud storage based on an ESP32 board, PostgreSQL, and a web interface. The device was tested in a simulated environment. Results indicate the proposed device reliably tracks flow variability, while offering portability, energy autonomy, and cost efficiency, and may serve as a feasible alternative for low-infrastructure, temporary deployments. Full article

The measurement of the magnetic field generated by a flowing current constitutes a non-invasive sensing technique for online energy consumption monitoring. In this work, based on the use of low-cost linear Hall effect sensors, a low-form-factor custom contactless ammeter probe is presented. The differential configuration of the sensor module and the subsequent fully digital programmability in range and sensitivity, together with the included self-calibration and compensation circuits for mismatching, managed by a microcontroller, allow for optimum detection for both continuous and mains current with a resolution of 10 mA for input ranges of 2 A. The proposed ammeter power consumption and measurement accuracy in different scenarios are tested, including the power monitoring of an IoT-based device, obtaining results matched to those featured by a commercial oscilloscope current probe, which validates its suitability and reliability as autonomous low-cost probe for portable contactless power monitoring. Full article

Silicon-based germanium films are promising for the fabrication of low-power, high-performance electronic and optoelectronic devices. In this work, we report an effective approach for directly growing Ge films with ultrahigh carrier mobility on Si (001) substrates using molecular beam epitaxy (MBE). Strain relaxation of the germanium films is realized through the formation of partial dislocations and 90° misfit dislocations at the Ge/Si interface. The Ge film exhibits a smooth surface with a root-mean-square roughness of 0.187 nm and a low threading dislocation density of only 1.2 × 10⁷ cm⁻². Hall effect measurements reveal a high room-temperature mobility of up to 1916 cm²V⁻¹s⁻¹ along with a carrier concentration of 1.425 × 10¹⁶ cm⁻³. These findings demonstrate that MBE-grown Ge films, possessing exceptionally high carrier mobility, hold great promise for integration into advanced electronic and optoelectronic devices. Full article