Search Results (28)

In recent years, research on light-matter interactions in silicon-based micro/nano cavity optomechanical systems demonstrates high-resolution sensing capabilities (e.g., sub-fm-level displacement sensitivity). Conventional 2D photonic crystal (PhC) cavity optomechanical sensors face inherent limitations: thin silicon layers (200–300 nm) restrict both the mass block (critical for thermal noise suppression) and optical Q-factor. Enlarging the detection mass in such thin layers exacerbates in-plane height nonuniformity, severely limiting high-precision sensing. This study proposes a 500 nm thick silicon-based 2D slot-type PhC cavity design for advanced sensing applications, fabricated on a silicon-on-insulator (SOI) substrate with optimized air slot structures. Systematic parameter optimization via finite element simulations defines structural parameters for the 1550 nm band, followed by 6 × 6 × 6 combinatorial experiments on lattice constant, air hole radius, and line-defect waveguide width. Experimental results demonstrate a loaded Q-factor of 57,000 at 510 nm lattice constant, 175 nm air hole radius, and 883 nm line-defect waveguide width (measured sidewall angle: 88.4°). The thickened silicon layer delivers dual advantages: enhanced mass block for thermal noise reduction and high Q-factor for optomechanical coupling efficiency, alongside improved ridge waveguide compatibility. This work advances the practical development of CMOS-compatible micro-opto-electromechanical systems (MOEMS). Full article

Fabry–Perot interferometers (FPIs), comprising foundry-compatible dielectric thin films on sapphire wafer substrates, were investigated for possible use in chemical sensing. Specifically, structures comprising two vertically stacked distributed Bragg reflectors (DBRs), with the lower DBR between a sapphire substrate and a silicon-oxide (SiO₂) resonator layer and the other DBR on top of this resonator layer, were investigated for operation in the near-ultraviolet (near-UV) range. The DBRs are composed of a stack of nitride-rich silicon-nitride (SiN_x) layers for the higher index and SiO₂ layers for the lower index. An exemplary application would be formaldehyde detection at sub-ppm concentrations in air, using UV absorption spectroscopy in the 300–360 nm band, while providing spectral selectivity against the main interfering gases, notably NO₂ and O₃. Although SiN_x thin films are conventionally used only for visible and near-infrared optical wavelengths (above 450 nm) because of high absorbance at lower wavelengths, this work shows that nitride-rich SiN_x is suitable for near-UV wavelengths. The interplay between spectral absorbance, transmittance and reflectance in a FPI is presented in a comparative study between one FPI design using stoichiometric material (Si₃N₄) and two designs based on N-rich compositions, SiN_1.39 and SiN_1.49. Spectral measurements confirm that if the design accounts for phase penetration depth, sufficient performance can be achieved with the SiN_1.49-based FPI design for gas absorption spectroscopy in near-UV, with peak transmission at 330 nm of 64%, a free spectral range (FSR) of 20 nm and a full-width half-magnitude spectral resolution (FWHM) of 2 nm. Full article

A high-sensitivity silicon microring (Si MRR) optical biosensor for detecting the nucleocapsid protein of SARS-CoV-2 is proposed and demonstrated. In the proposed biosensor, the surface of a Si MRR waveguide is modified with antibodies, and the target protein is detected by measuring a resonant wavelength shift of the MRR caused by the selective adsorption of the protein to the surface of the waveguide. A Si MRR is fabricated on a silicon-on-insulator substrate using a CMOS-compatible fabrication process. The quality factor of the MRR is approximately 20,000. The resonant wavelength shift of the MRR and the detection limit for the environmental refractive index change are evaluated to be 89 nm/refractive index unit (RIU) and 10⁻⁴ RIU, respectively. The sensing characteristics are examined using a polydimethylsiloxane flow channel after the surface of the Si MRR waveguide is modified with the IgG antibodies through the Si-tagged protein. First, the selective detection of the protein by the MRR sensor is experimentally demonstrated by the detection of bovine serum albumin and human serum albumin. Next, various concentrations of nucleocapsid protein solutions are measured by the MRR, in which the waveguide surface is modified with the IgG antibodies through the Si-tagged protein. Although the experimental results are very preliminary, they show that the proposed sensor has a potential nucleocapsid sensitivity in the order of 10 pg/mL, which is comparable to the sensitivity of current antigen tests. The detection time is less than 10 min, which is much shorter than those of other antigen tests. Full article

On-chip multi-dimensional detection systems integrating pixelated polarization and spectral filter arrays are the latest trend in optical detection instruments, showing broad application potential for diagnostic medical imaging and remote sensing. However, thin-film or microstructure-based filter arrays typically have a trade-off between the detection dimension, optical efficiency, and spectral resolution. Here, we demonstrate novel on-chip integrated polarization spectral detection filter arrays consisting of metasurfaces and multilayer films. The metasurfaces with two nanopillars in one supercell are designed to modulate the Jones matrix for polarization selection. The angle of diffraction of the metasurfaces and the optical Fabry–Perot (FP) cavities determine the spectrum’s center wavelength. The polarization spectral filter arrays are placed on top of the CMOS sensor; each array corresponds to one pixel, resulting in high spectral resolution and optical efficiency in the selected polarization state. To verify the methodology, we designed nine-channel polarized spectral filter arrays in a wavelength range of 1350 nm to 1550 nm for transverse electric (TE) linear polarization. The array has a 10 nm balanced spectral resolution and average peak transmission efficiency of over 75%, which is maintained by utilizing lossless dielectric material. The proposed array can be fabricated using overlay e-beam lithography, and the process is CMOS-compatible. The proposed array enables broader applications of in situ on-chip polarization spectral detection with high efficiency and spectral resolution, as well as in vivo imaging systems. Full article

The use of composite materials has seen widespread adoption in modern aerospace industry. This has been facilitated due to their favourable mechanical characteristics, namely, low weight and high stiffness and strength. For broader implementation of those materials though, the out-of-autoclave production processes have to be optimized, to allow for higher reliability of the parts produced as well as cost reduction and improved production speed. This optimization can be achieved by monitoring and controlling resin filling and curing cycles. Photonic Integrated Circuits (PICs), and, in particular, Silicon Photonics, owing to their fast response, small size, ability to operate at higher temperatures, immunity to electromagnetic interference, and compatibility with CMOS fabrication techniques, can offer sensing solutions fulfilling the requirements for composite material production using carbon fibres. In this paper, we demonstrate a passive optical temperature sensor, based on a 220 nm height Silicon-on-Insulator platform, embedded in a composite tool used for producing RTM-6 composite parts of high quality (for use in the aerospace industry). The design methodology of the photonic circuit as well as the experimental results and comparison with the industry standard thermocouples during a thermal cycling of the tool are presented. The optical sensor exhibits high sensitivity (85 pm/°C), high linearity (R² = 0.944), and is compatible with the RTM-6 production process, operating up to 180 °C. Full article

Silicon-based photodetectors are attractive as low-cost and environmentally friendly optical sensors. Also, their compatibility with complementary metal-oxide-semiconductor (CMOS) technology is advantageous for the development of silicon photonics systems. However, extending optical responsivity of silicon-based photodetectors to the mid-infrared (mid-IR) wavelength range remains challenging. In developing mid-IR infrared Schottky detectors, nanoscale metals are critical. Nonetheless, one key factor is the Fermi-level pinning effect at the metal/silicon interface and the presence of metal-induced gap states (MIGS). Here, we demonstrate the utilization of the passivated surface layer on semiconductor materials as an insulating material in metal-insulator-semiconductor (MIS) contacts to mitigate the Fermi-level pinning effect. The removal of Fermi-level pinning effectively reduces the Schottky barrier height by 12.5% to 16%. The demonstrated devices exhibit a high responsivity of up to 234 μA/W at a wavelength of 2 μm, 48.2 μA/W at 3 μm, and 1.75 μA/W at 6 μm. The corresponding detectivities at 2 and 3 μm are 1.17 × 10⁸ cm Hz^1/2 W⁻¹ and 2.41 × 10⁷ cm Hz^1/2 W⁻¹, respectively. The expanded sensing wavelength range contributes to the application development of future silicon photonics integration platforms. Full article

Electrophotonic (EPh) circuits are novel systems where photons and electrons can be controlled simultaneously in the same integrated circuit, attaining the development of innovative sensors for different applications. In this work, we present a complementary metal-oxide-semiconductor (CMOS)-compatible EPh circuit for biotin sensing, in which a silicon-based light source is monolithically integrated. The device is composed of an integrated light source, a waveguide, and a p–n photodiode, which are all fabricated in the same chip. The functionalization of the waveguide’s surface was investigated to biotinylate the EPh system for potential biosensing applications. The modified surfaces were characterized by AFM, optical microscopy, and Raman spectroscopy, as well as by photoluminescence measurements. The changes on the waveguide’s surface due to functionalization and biotinylation translated into different photocurrent intensities detected in the photodiode, demonstrating the potential uses of the EPh circuit as a biosensor. Full article

Traditional temperature detection has limitations in terms of sensing accuracy and response time, while chip-level photoelectric sensors based on the thermo-optic effect can improve measurement sensitivity and reduce costs. This paper presents on-chip temperature sensors based on polysilicon (p-Si) waveguides. Dual-microring resonator (MRR) and asymmetric Mach–Zehnder interferometer (AMZI) sensors are demonstrated. The experimental results show that the sensitivities of the sensors based on AMZI and MRR are 86.6 pm/K and 85.7 pm/K, respectively. The temperature sensors proposed in this paper are compatible with the complementary metal-oxide-semiconductor (CMOS) fabrication technique. Benefitting from high sensitivity and a compact footprint, these sensors show great potential in the field of photonic-electronic applications. Full article

This paper reports on a CMOS fully integrated optoelectronic sensing system composed of a Si photodiode and a transimpedance amplifier acting as the electronic analog front-end for the conditioning of the photocurrent generated by the photodiode. The proposed device has been specifically designed and fabricated for wearable/portable/implantable biomedical applications. The massive employment of sensor systems in different industrial and medical fields requires the development of small sensing devices that, together with suitable electronic analog front ends, must be designed to be integrated into proper standard CMOS technologies. Concerning biomedical applications, these devices must be as small as possible, making them non-invasive, comfortable tools for patients and operating with a reduced supply voltage and power consumption. In this sense, optoelectronic solutions composed of a semiconductor light source and a photodiode fulfill these requirements while also ensuring high compatibility with biological tissues. The reported optoelectronic sensing system is implemented and fabricated in TSMC 180 nm integrated CMOS technology and combines a Si photodiode based on a PNP junction with a Si area of 0.01 mm² and a transimpedance amplifier designed at a transistor level requiring a Si area of 0.002 mm² capable to manage up to nanoampere input currents generated by the photodiode. The transimpedance amplifier is powered at a 1.8 V single supply showing a maximum power consumption of about 54 μW, providing a high transimpedance gain that is tunable up to 123 dBΩ with an associated bandwidth of about 500 kHz. The paper reports on both the working principle of the developed ASIC and the experimental measurements for its full electrical and optoelectronic characterizations. Moreover, as case-examples of biomedical applications, the proposed integrated sensing system has also been validated through the optical detection of emulated standard electrocardiography and photoplethysmography signal patterns. Full article

This paper presents AlScN piezoelectric two-axis MEMS mirrors with gimbal-less and gimbaled designs fabricated in a CMOS-compatible manner. Integrated piezoelectric sensors provided feedback signals of the actual mirror positions. The mirror with a diameter of 1.5 mm possessed adjustable optical tilt angles of up to 22.6° @ 30 V, with a high resonance frequency of about 8.2 kHz, while the 3 mm mirror reached 48.5° @ 41 V. The mirror with the gimbaled structure exhibited an excellent field of view and good mechanical decoupling. Additionally, a significant improvement in mirror scanning performance was observed in a vacuum (4 Pa), proving that the optical field of view was magnified by more than a factor of 10. Full article

A Bragg grating (BG) is a one-dimensional optical device that may reflect a specific wavelength of light while transmitting all others. It is created by the periodic fluctuation of the refractive index in the waveguide (WG). The reflectivity of a BG is specified by the index modulation profile. A Bragg grating is a flexible optical filter that has found broad use in several scientific and industrial domains due to its straightforward construction and distinctive filtering capacity. WG BGs are also widely utilized in sensing applications due to their easy integration and high sensitivity. Sensors that utilize optical signals for sensing have several benefits over conventional sensors that use electric signals to achieve detection, including being lighter, having a strong ability to resist electromagnetic interference, consuming less power, operating over a wider frequency range, performing consistently, operating at a high speed, and experiencing less loss and crosstalk. WG BGs are simple to include in chips and are compatible with complementary metal-oxide-semiconductor (CMOS) manufacturing processes. In this review, WG BG structures based on three major optical platforms including semiconductors, polymers, and plasmonics are discussed for filtering and sensing applications. Based on the desired application and available fabrication facilities, the optical platform is selected, which mainly regulates the device performance and footprint. Full article

Deoxyribonucleic acid (DNA) sequencing technology provides important data for the disclosure of genetic information and plays an important role in gene diagnosis and gene therapy. Conventional sequencing devices are expensive and require large and bulky optical structures and additional fluorescent labeling steps. Sequencing equipment based on a semiconductor chip has the advantages of fast sequencing speed, low cost and small size. The detection of DNA base pairing is the most important step in gene sequencing. In this study, a large-scale ion-sensitive field-effect transistor (ISFET) array chip with more than 13 million sensitive units is successfully designed for detecting the DNA base pairing. DNA base pairing is successfully detected by the sensor system, which includes the ISFET microarray chip, microfluidic system, and test platform. The chip achieves a high resolution of at least 0.5 mV, thus enabling the recognition of the change of 0.01 pH value. This complementary metal-oxide semiconductor (CMOS) compatible and cost-efficient sensor array chip, together with other specially designed components, can form a complete DNA sequencing system with potential application in the molecular biology fields. Full article

Semiconductor (SC)-based field-effect transistors (FETs) have been demonstrated as amazing enhancer gadgets due to their delicate interface towards surface adsorption. This leads to their application as sensors and biosensors. Additionally, the semiconductor material has enormous recognizable fixation extends, high affectability, high consistency for solid detecting, and the ability to coordinate with other microfluidic gatherings. This review focused on current progress on the semiconductor-interfaced FET biosensor through the fundamental interface structure of sensor design, including inorganic semiconductor/aqueous interface, photoelectrochemical interface, nano-optical interface, and metal-assisted interface. The works that also point to a further advancement for the trademark properties mentioned have been reviewed here. The emergence of research on the organic semiconductor interface, integrated biosensors with Complementary metal–oxide–semiconductor (CMOS)-compatible, metal-organic frameworks, has accelerated the practical application of biosensors. Through a solid request for research along with sensor application, it will have the option to move forward the innovative sensor with the extraordinary semiconductor interface structure. Full article

The detection of influenza A virions with a nanoribbon detector (NR detector) has been demonstrated. Chips for the detector have been fabricated based on silicon-on-insulator nanoribbon structures (SOI nanoribbon chip), using a complementary metal-oxide-semiconductor (CMOS)-compatible technology—by means of gas-phase etching and standard optical photolithography. The surface of the SOI nanoribbon chip contains a matrix of 10 nanoribbon (NR) sensor elements. SOI nanoribbon chips of n-type conductance have been used for this study. For biospecific detection of target particles, antibodies against influenza virus have been covalently immobilized onto NRs. Influenza A virus detection was performed by real-time registration of the source-drain current through the NRs. The detection of the target viral particles was carried out in buffer solutions at the target particles concentration within the range from 10⁷ to 10³ viral particles per milliliter (VP/mL). The lowest detectable concentration of the target viral particles was 6 × 10⁻¹⁶ M (corresponding to 10⁴ VP/mL). The use of solutions containing ~10⁹ to 10¹⁰ VP/mL resulted in saturation of the sensor surface with the target virions. In the saturation mode, detection was impossible. Full article

Multispectral imaging (MI) techniques are being used very often to identify different properties of nature in several domains, going from precision agriculture to environmental studies, not to mention quality inspection of pharmaceutical production, art restoration, biochemistry, forensic sciences or geology, just to name some. Different implementations are commercially available from the industry and yet there is quite an interest from the scientific community to spread its use to the majority of society by means of cost effectiveness and ease of use for solutions. These devices make the most sense when combined with unmanned aerial vehicles (UAVs), going a step further and alleviating repetitive routines which could be strenuous if traditional methods were adopted. In this work, a low cost and modular solution for a multispectral camera is presented, based on the use of a single panchromatic complementary metal oxide semiconductor (CMOS) sensor combined with a rotating wheel of interchangeable band pass optic filters. The system is compatible with open source hardware permitting one to capture, process, store and/or transmit data if needed. In addition, a calibration and characterization methodology has been developed for the camera, allowing not only for quantifying its performance, but also able to characterize other CMOS sensors in the market in order to select the one that best suits the budget and application. The process was experimentally validated by mounting the camera in a Dji Matrice 600 UAV to uncover vegetation indices in a reduced area of palm trees plantation. Results are presented for the normalized difference vegetation index (NDVI) showing a generated colored map with the captured information. Full article