Domain Boundaries in Ferroelectrics
A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Crystal Engineering".
Deadline for manuscript submissions: closed (1 November 2020) | Viewed by 203
Special Issue Editor
Special Issue Information
Dear Colleagues,
The editors of Crystals magazine are planning to publish a thematic issue of the journal devoted to domain boundaries in ferroelectrics. The purpose of this publication is to present in a concentrated manner the current state of research in this area and the likely practical applications of effects related to domain boundaries. It is assumed that this issue of the journal will contain experimental and theoretical review articles on the following key sections for these objects:
- Calculation of the structure of ferroelectric domain walls and the magnitude of the lattice potential barrier from the first principles;
- Calculation of the structure of domain walls in ferroelectrics as part of a phenomenological consideration;
- Description of the laws governing the motion of domain walls in ferroelectrics in various field ranges;
- Charged domain boundaries;
- Interaction of domain boundaries with defects;
- Features of the structure and motion of domain walls in nanoscale ferroelectrics (thin films, composites, ferroelectric superlattices);
- The practical use of ferroelectric domain walls in memory devices, radio electronics, etc.
Some references for your information:
1. A.S. Sidorkin. Domain Structure in Ferroelectrics and Related Materials. -iva Books, 2015, ISBN-10: 8130931540, ISBN-13: 978-8130931548, Cambridge International Science Publishing -Viva Books, 244 p.
2. A.S.Sidorkin. Domain boundaries in ferroelectrics. Journal of Advanced Dielectrics, V.2, N.4, 2012, P.1230013. DOI: 10.1142/S2010135X12300137.
3. A.S. Sidorkin. Dislocation mechanism of ferroelectric fatigue during multiple switching. Journal of advanced dielectrics, Vol.3, No.3,2013, 1350025. DOI:10.1142/S2010135X13500252.
Prof. Alexander Sidorkin
Guest Editor
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