Growth and Properties of Novel Semiconductor Materials

A special issue of Crystals (ISSN 2073-4352).

Deadline for manuscript submissions: 10 October 2025 | Viewed by 45

Special Issue Editors


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Guest Editor
1. Department of Physics, University of Arkansas, Fayetteville, AR 72701, USA
2. Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR 72701, USA
Interests: semiconductor physics and devices; epitaxy; semiconductor characterization; heterostructure devices; quantum heterostructures for optical devices
Special Issues, Collections and Topics in MDPI journals

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Guest Editor
Department of Electronics and Electrical Engineering, Centre for Nanotechnology, Indian Institute of Technology Guwahati, Guwahati 781039, Assam, India
Interests: wide bandgap semiconductors; power semiconductor devices; deep UV photodetector

Special Issue Information

Dear Colleagues,

This Special Issue is dedicated to the latest advancements in the field of semiconductor materials, encompassing synthesis techniques, epitaxial growth processes, unique material properties, characterization techniques, and the investigation of their cutting-edge applications. We invite researchers to contribute revolutionary work on the development and characterization of novel semiconductor materials, which are pivotal in various technological applications, including electronics, optoelectronics, and sensor technology.

The focus of this issue will be on innovative synthesis methods, such as molecular beam epitaxy, chemical vapor deposition, and physical vapor deposition, as well as novel approaches to epitaxial growth that enhance film quality and performance. Manuscripts should address the challenges and solutions in achieving precise control over film thickness, composition, and crystallographic orientation.

The goal of this Special Issue is to provide a platform for the dissemination of cutting-edge research that advances the understanding and application of semiconductor materials. By bringing together contributions from diverse disciplines, we aim to foster interdisciplinary collaboration and accelerate the development of next-generation materials with enhanced performance.

Dr. Subhashis Das
Dr. Ankush Bag
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Crystals is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2100 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • semiconductor
  • epitaxy
  • heterostructure
  • semiconductor characterization
  • nanostructures
  • thin film

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