Advances in Ferroelectric Materials and Devices: Developments and Prospects
A special issue of Applied Sciences (ISSN 2076-3417). This special issue belongs to the section "Materials Science and Engineering".
Deadline for manuscript submissions: closed (30 December 2023) | Viewed by 316
Special Issue Editors
Interests: ferroelectric thin film capacitors; ferroelectric memory devices; ferroelectric devices for DRAM technology
Special Issue Information
Dear Colleagues,
We invite research scholars to submit their original, cutting-edge research for consideration in this Special Issue on “Advances in Ferroelectric Materials and Devices: Developments and Prospects”.
Perovskite ferroelectric materials have received a lot of attention in recent decades for a variety of applications including nonvolatile memory, sensors, piezoelectric devices, spintronics, energy storage devices, and energy harvesting technology. However, the complexity of the perovskite ferroelectric material process and the difficulty in developing integration systems with semiconductor technology limit their uses. In contrast, the discovery of ferroelectricity in hafnium-oxide-based materials in the last decade has sparked renewed interest in several domains of semiconductor technology due to its superior ferroelectricity, CMOS compatibility, and suitability for 3D devices. Potential applications of such HfO2 material systems include FeFETs, FTJs, FeRAMs, synaptic and logic devices, energy storage supercapacitors, piezoelectric sensors, and energy harvesters. However, various obstacles (scaling and uniformity, interface engineering, leakage current, reliability, etc.) must be overcome before it can be further developed. Very recently, another potential ferroelectric material (AlScN) system has received a lot of attention due to its compatibility with existing piezoelectric applications.
The aim of this Special Issue is to highlight the most recent advancements in the science and technology of ferroelectric materials, such as Hafnium oxide (HfO2) and Aluminum scandium nitride (AlScN), covering broad range of fields from the material process to the development of new devices and their applications through a combination of original research papers and review articles from leading groups around the world.
In particular, the topics of interest include but are not limited to:
- Advancements in ferroelectric thin films, growth, and characterization;
- Novel ferroelectric thin films for capacitors and their applications;
- Ferroelectric memory devices (FTJ, FeRAM, FeFETs, etc.);
- DRAM cell capacitors and Morpotropic Phase Boundary (MPB);
- Anti-ferroelectric thin film devices for Energy Storage Technology;
- Ferroelectric thin films for imprint technology;
- Ferroelectric thin films for sensors, actuators, and energy-harvesting devices;
- Ferroelectric thin films for Neuromorphic Devices.
Dr. Venkateswarlu Gaddam
Dr. Sunil Babu Eadi
Guest Editors
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