Development of New Efficient Precursors for Atomic Layer Deposition (ALD) Processes

Dear Colleagues,

Atomic layer deposition (ALD) is a booming technology in academia and industry that has become a powerful tool for the synthesis and functionalization of nanomaterials. It is capable of depositing a wide range of materials under soft conditions, with subnanometer precision and fine-tuning of their properties. To date, more than 1000 ALD processes have been developed to produce a large variety of materials, including inorganic, organic, and organic–inorganic hybrid films.

Based on self-limiting surface reactions, ALD is a chemical process that relies on the use of molecules (so-called ALD precursors). A key parameter in a ALD growth process is the nature of the precursors, as they may enable not only the stringent requirements in deposition conditions but also specific surface-reaction and targeted-film properties. In addition to commercial and safety constraints, ALD precursors must have appropriate thermogravimetric properties (volatility, thermal stability) and well-adapted reactivity to grow the desired film without contamination, potentially on different supports. Therefore, the development of ALD precursors is an extensive research area that includes several aspects, from ALD precursor design, synthesis and characterization, and the study and application of surface reactivity in the ALD growth of innovative functional materials.

The Special Issue of Applied Sciences “Development of New Efficient Precursors for Atomic Layer Deposition (ALD) Processes” aims to provide a research forum to exchange the latest results with ALD precursors, and explore their potential to generate functional materials for future applications. Possible topics include but are not limited to precursor design, synthesis and characterization, as well as the application of ALD precursors. This Special Issue invites original, high-quality research work that has not been published or is not being peer-reviewed by other journals or conferences. This Special Issue will publish communications, full papers, and review articles.

Dr. Nathanaelle Schneider
Prof. Stephane Daniele
Dr. Christian Dussarrat
Guest Editors

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• Atomic layer deposition
• ALD/CVD precursors
• ALD molecular precursor design
• Thermogravimetric properties
• Vapor pressure measurements
• Organometallic and coordination chemistries
• Functional materials
• 2D materials
• Thin films