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An Inverted Magnetron Operating in HiPIMS Mode

1
Technological Plasma Research Unit, Department of Physics, Faculty of Science, Mahasarakham University, Maha Sarakham 44150, Thailand
2
Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400, Thailand
3
Department of Electrical Engineering and Electronics, University of Liverpool, Brownlow Hill, Liverpool L69 3GJ, UK
*
Author to whom correspondence should be addressed.
Plasma 2018, 1(2), 277-284; https://doi.org/10.3390/plasma1020024
Received: 1 November 2018 / Revised: 17 November 2018 / Accepted: 26 November 2018 / Published: 27 November 2018
(This article belongs to the Special Issue Latest Developments in Pulsed Low-Temperature Plasmas)
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Abstract

An ionized physical vapor deposition technique for thin ferromagnetic films is proposed. The technique is based on high power impulse magnetron sputtering (HiPIMS) with positive discharge polarity. A gapped-target was employed as the cathode of the magnetron. By applying positive HiPIMS pulses to the anode, sputtered particles inside the magnetron source were ionized and extracted through the gap. Using a discharge current with a peak of about 13 A, an ion flux in the order of 1021 m−2s−1 was obtained at a distance of 45 mm from the magnetron. In addition, deposition rates of up to 1.1 Å/s for nickel films were achieved using a 30 Hz repetition rate and 300 µs pulse width. View Full-Text
Keywords: ionized physical vapor deposition; magnetron sputtering; HiPIMS; ferromagnetic thin films ionized physical vapor deposition; magnetron sputtering; HiPIMS; ferromagnetic thin films
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Poolcharuansin, P.; Chingsungnoen, A.; Pasaja, N.; Bradley, J.W. An Inverted Magnetron Operating in HiPIMS Mode. Plasma 2018, 1, 277-284.

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