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Article

Modification of SiO2, ZnO, Fe2O3 and TiN Films by Electronic Excitation under High Energy Ion Impact

1
Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan
2
Japan Atomic Energy Agency (JAEA), Tokai 319-1195, Japan
*
Author to whom correspondence should be addressed.
Academic Editors: Akihiro Iwase and Rozaliya Barabash
Quantum Beam Sci. 2021, 5(4), 30; https://doi.org/10.3390/qubs5040030
Received: 30 August 2021 / Revised: 6 October 2021 / Accepted: 17 October 2021 / Published: 27 October 2021
It has been known that the modification of non-metallic solid materials (oxides, nitrides, etc.), e.g., the formation of tracks, sputtering representing atomic displacement near the surface and lattice disordering are induced by electronic excitation under high-energy ion impact. We have investigated lattice disordering by the X-ray diffraction (XRD) of SiO2, ZnO, Fe2O3 and TiN films and have also measured the sputtering yields of TiN for a comparison of lattice disordering with sputtering. We find that both the degradation of the XRD intensity per unit ion fluence and the sputtering yields follow the power-law of the electronic stopping power and that these exponents are larger than unity. The exponents for the XRD degradation and sputtering are found to be comparable. These results imply that similar mechanisms are responsible for the lattice disordering and electronic sputtering. A mechanism of electron–lattice coupling, i.e., the energy transfer from the electronic system into the lattice, is discussed based on a crude estimation of atomic displacement due to Coulomb repulsion during the short neutralization time (~fs) in the ionized region. The bandgap scheme or exciton model is examined. View Full-Text
Keywords: electronic excitation; lattice disordering; sputtering; electron–lattice coupling electronic excitation; lattice disordering; sputtering; electron–lattice coupling
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MDPI and ACS Style

Matsunami, N.; Sataka, M.; Okayasu, S.; Tsuchiya, B. Modification of SiO2, ZnO, Fe2O3 and TiN Films by Electronic Excitation under High Energy Ion Impact. Quantum Beam Sci. 2021, 5, 30. https://doi.org/10.3390/qubs5040030

AMA Style

Matsunami N, Sataka M, Okayasu S, Tsuchiya B. Modification of SiO2, ZnO, Fe2O3 and TiN Films by Electronic Excitation under High Energy Ion Impact. Quantum Beam Science. 2021; 5(4):30. https://doi.org/10.3390/qubs5040030

Chicago/Turabian Style

Matsunami, Noriaki, Masao Sataka, Satoru Okayasu, and Bun Tsuchiya. 2021. "Modification of SiO2, ZnO, Fe2O3 and TiN Films by Electronic Excitation under High Energy Ion Impact" Quantum Beam Science 5, no. 4: 30. https://doi.org/10.3390/qubs5040030

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