1. Introduction
Aluminum Nitride (AlN), possessing no natural counterparts, is exclusively synthesized through artificial means [
1]. Early research primarily utilized AlN as a nitrogen-source fertilizer, with its ceramic form remaining unrealized until the 1950s due to formidable sintering exigencies [
1]. The ongoing transition to 5G/6G communication technologies have intensified thermal management bottlenecks across multiple advanced applications—including smartphones, high-speed rail, and new energy vehicles—where continued device miniaturization (from 20 nm to 3 nm architectures) has dramatically increased power density, thereby demanding packaging materials with radically enhanced comprehensive performance. Presently, AlN is universally acknowledged as the preeminent packaging material and an essential substrate for fourth-generation semiconductors, owing to its unmatched combination of properties [
2]. However, the pronounced susceptibility of AlN powders to hydrolytic degradation not only compromises their intrinsic thermal conductivity but also generates environmentally hazardous ammonia vapors. Moreover, the exceptionally high sintering temperatures requisite for dense AlN ceramics entail substantial energy expenditure and impose extreme operational demands on furnace systems. These collective limitations severely constrain industrial adoption of AlN powders, with their inherent hydrolytic instability constituting a fundamental weakness. Consequently, investigating and developing hydrolysis-resistant AlN powders represents a research imperative of both scientific and technological significance.
In their investigation of hydrolysis mechanisms in submicron and nano-sized AlN powders, Xu et al. [
3] demonstrated a positive correlation between system temperature and hydrolysis rate, while revealing an inverse relationship between particle size and hydrolysis kinetics. Their analysis identified Al(OH)
3 as the predominant hydrolysis product at ambient temperature, with AlO(OH) becoming the dominant phase under elevated thermal conditions. TEM characterization revealed that hydrolysis preferentially initiates at surface step sites, leading to the formation of amorphous phases. Researchers further established that phosphoric acid treatment effectively passivates AlN surfaces, resulting in significantly enhanced hydrolysis resistance. XRD analysis confirmed the absence of new crystalline phases following this surface modification. Additionally, the development of a thermal treatment protocol successfully generated a dense alumina protective layer on AlN surfaces, with systematic investigation of the correlation between particle size and the critical annealing temperature required for optimal hydrolysis resistance. The study also documented accelerated hydrolysis kinetics in both acidic (HCl) and basic (NaOH) environments, where AlN undergoes transformation to Al
3+ and AlO
2− species, respectively. Guo et al. [
4] systematically outlined future research directions for enhancing the hydrolysis resistance of AlN powders, categorizing the primary approaches into two distinct strategies: surface chemical modification and physical coating techniques. Surface chemical modification involves the formation of chemical bonds between AlN surfaces and modifying agents, primarily accomplished through methods including coupling agent modification, graft copolymerization, surface oxidation, surfactant treatment, and strong acid functionalization [
5]. Physical coating methodologies predominantly comprise liquid-phase encapsulation and vapor deposition techniques.
Aluminum Nitride (AlN) is a Group III-V compound characterized by its hexagonal wurtzite crystal structure and strong covalent bonding. The atomic arrangement consists of [AlN
4] tetrahedra as the fundamental building blocks, with a space group of P6
3mc and lattice parameters of a = 0.3110 nm and c = 0.4978 nm [
3]. When compared to other high-thermal-conductivity ceramic materials (Al
2O
3, BeO, SiC, Si
3N
4), AlN demonstrates superior comprehensive properties owing to its lower atomic mass, strong bonding nature, non-toxicity, low dielectric constant and loss, well-matched thermal expansion coefficient with silicon, and high mechanical strength [
1]. Furthermore, AlN possesses an ultra-wide bandgap of 6.2 eV [
6] with direct transition characteristics [
3], rendering it an excellent electrical insulator. Thermal transport in AlN occurs primarily through phonon interactions, resulting in high intrinsic thermal conductivity. However, the practical thermal conductivity is significantly influenced by microstructural factors: porosity impedes heat propagation, impurities induce phonon scattering, and grain boundaries create interfacial barriers to thermal transport. Consequently, continuous AlN crystal structures with minimal defects are essential for optimizing phonon-mediated heat conduction [
1].
AlN powders undergo rapid hydrolysis upon exposure to atmospheric moisture or aqueous environments. This hydrolytic degradation leads to decreased nitrogen content and increased oxygen incorporation into the AlN crystal lattice, consequently disrupting its structural integrity and periodicity. The introduced lattice defects and oxygen impurities act as effective phonon scattering centers, significantly degrading the thermal conductivity. Furthermore, hydrolytic susceptibility necessitates stringent storage conditions, increasing both storage costs and handling complexity. More critically, this property prohibits the application of water-based shaping techniques—including tape casting, slip casting, and spray drying, thereby substantially limiting the processing flexibility and industrial applicability of AlN powders [
7].
Thermal treatment of AlN surfaces represents one approach to inhibiting hydrolysis by forming a dense alumina protective layer [
8] that prevents direct water contact. However, this method suffers from significant drawbacks including high energy consumption and the introduction of oxygen impurities into the crystal structure [
9]. These oxygen atoms act as phonon scattering centers, generating thermal resistance that substantially degrades the intrinsic thermal conductivity of AlN. Surface modification using high-molecular-weight organic acids (e.g., oleic acid, palmitic acid, 8-hydroxyquinoline, polyethylene glycol, stearic acid, Tween 80, silane coupling agents) has been frequently reported. According to the principle of “like dissolves like,” anhydrous ethanol is typically required as the solvent. This methodology presents several limitations: the high cost of organic modifiers, safety concerns associated with ethanol handling, and predominantly physical adsorption mechanisms that lead to gradual desorption at elevated temperatures. The resulting hydrophobic surfaces preclude water-based forming techniques such as slip casting and spray drying [
10]. Additionally, subsequent sintering requires extensive binder burnout procedures that prolong processing time and generate porous, insufficiently densified ceramic structures. These residual pores act as phonon scattering centers, inducing thermal resistance and ultimately degrading the thermal conductivity of the final product.
Conventional surface chemical modification of AlN powders typically employs phosphoric acid or silane coupling agents. When phosphoric acid is utilized as a surface modifier, phosphorus incorporation into the AlN lattice during sintering occurs, disrupting crystalline integrity and periodicity [
11,
12]. This phosphorus-induced lattice distortion acts as phonon scattering centers, consequently degrading the thermal conductivity of the resulting AlN ceramics. Furthermore, the application of phosphoric acid raises environmental concerns due to its ecological impact. Silane coupling agents, while effective in modification, impart hydrophobic characteristics to the treated AlN powders [
13]. This hydrophobicity prevents the implementation of aqueous-based forming processes. Additionally, silane modification presents economic disadvantages due to high material costs and necessitates extensive binder removal during sintering. This prolonged debonding process often results in elevated porosity within the sintered ceramics, ultimately compromising their thermal conductivity.
In this study, we propose an alternative approach using commercially available low-molecular-weight organic acids, namely oxalic acid and citric acid, as surface modifiers. These compounds offer significant advantages: their low cost, presence of hydrophilic functional groups enabling water-based processing, and elemental composition consisting exclusively of carbon, hydrogen, and oxygen. During low-temperature sintering, these organic acids undergo complete decomposition into water vapor and carbon dioxide, leaving no residual impurities. This characteristic enables the production of high-purity AlN ceramics, rendering this methodology particularly suitable for manufacturing semiconductor substrate materials where extreme purity is paramount.
3. Materials and Methods
3.1. Materials and Experimental Procedure
The surface modification of aluminum nitride (AlN,
Figure 11) powder was performed according to the following experimental procedure. Initially, 1.0 g of AlN powder was accurately weighed and introduced into a centrifuge tube containing 10 mL of an aqueous modifier solution (
Table 1). The anionic surfactant sodium dodecylbenzenesulfonate (C
18H
29NaO
3S) was used as the dispersant. A very small quantity of boric acid was incorporated into the low-molecular-weight organic acid, acting as a buffer.
The reaction system was maintained under controlled temperature conditions using a thermostatic water bath, with the centrifuge tube immersed in a beaker filled with deionized water. Subsequently, the modified powder was separated by centrifugation at 1500 rpm for 15 min, followed by two successive washing cycles with deionized water to remove any residual modifiers. The resulting sediment was transferred to a crucible and dried at 100 °C for 10 min in an oven. The dried powder was then carefully ground using an agate mortar, sieved through a 250-mesh screen, and subjected to subsequent characterization. Phase identification was carried out by X-ray diffraction (XRD) analysis, while morphological characterization was performed using scanning electron microscopy (SEM) after depositing a conductive thin film on the sample surface.
3.2. Characterization Methods
X-ray powder diffraction (XRD) patterns were obtained using a Miniflex600 diffractometer (RIGAKU, Tokyo, Japan) operated at 40 kV and 15 mA with Cu Kα (0.15418 nm), a curved graphite secondary monochromator, a scan range of 5°2θ to 90°2θ, a step width of 0.02°2θ, and a scan speed of 10°/min. The incident X-ray beam was filtered by a nickel (Ni) filter to remove the Kβ component. The Rigaku MiniFlex 600 X-ray diffractometer incorporates a real-time angle calibration system, a compact detector, and a detector monochromator, which significantly enhances angular accuracy, intensity, and peak-to-background ratio.
The microstructure of the samples was examined using a SU 5000 scanning electron microscope (Hitachi, Tokyo, Japan) with a field emission gun operating normally at 5–10 kV of acceleration voltage in a high vacuum environment. Specimen preparation involved mounting powder samples on conductive adhesive followed by Au/Pd sputter-coating to ensure surface conductivity. Samples were subsequently transferred to the microscope chamber under high vacuum conditions for characterization.
The morphology of the samples was examined by using a transmission electron microscope (TEM, JEM-2100F, Tokyo, Japan) operated at 100~200 kV. The micrographs of the samples were obtained from powdered samples deposited on a holey Cu grid.