High Operating Temperature InAs/GaSb Superlattice Based Mid Wavelength Infrared Photodetectors Grown by MOCVD

Zhu, He; Liu, Jiafeng; Zhu, Hong; Huai, Yunlong; Li, Meng; Liu, Zhen; Huang, Yong

doi:10.3390/photonics8120564

Open AccessCommunication

High Operating Temperature InAs/GaSb Superlattice Based Mid Wavelength Infrared Photodetectors Grown by MOCVD

by

He Zhu

^1,2,

Jiafeng Liu

^1,2,

Hong Zhu

^1,2,

Yunlong Huai

^1,2,

Meng Li

^2,3,

Zhen Liu

^2,4 and

Yong Huang

^1,2,*

¹

The School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China

²

The Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

³

The School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China

⁴

Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123, China

^*

Author to whom correspondence should be addressed.

Photonics 2021, 8(12), 564; https://doi.org/10.3390/photonics8120564

Submission received: 9 November 2021 / Revised: 3 December 2021 / Accepted: 6 December 2021 / Published: 10 December 2021

(This article belongs to the Special Issue Mid-Infrared Integrated Photonics)

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Abstract

High operating temperature mid-wavelength InAs/GaSb superlattice infrared photodetectors with a single heterojunction structure grown by metal–organic chemical vapor deposition are reported. By inserting a fully-depleted wider-gap barrier layer between the absorber and the p-contact, “diffusion-limited” behavior has been achieved for the heterojunction “PNn” device, in contrast to the conventional pin homojunction device. The PNn device with a 50% cutoff wavelength of 4.5

μ m

exhibited a dark current of 2.05

\times

10⁻⁴ A/cm² and a peak specific detectivity of 1.28

\times

10¹¹

cm \cdot \sqrt{Hz} \cdot W^{- 1}

at 150 K and a reverse bias of −0.1 V.

Keywords: high operating temperature; mid-wavelength infrared; aluminum-free; inas/gasb superlattice; metal–organic chemical vapor deposition

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MDPI and ACS Style

Zhu, H.; Liu, J.; Zhu, H.; Huai, Y.; Li, M.; Liu, Z.; Huang, Y. High Operating Temperature InAs/GaSb Superlattice Based Mid Wavelength Infrared Photodetectors Grown by MOCVD. Photonics 2021, 8, 564. https://doi.org/10.3390/photonics8120564

AMA Style

Zhu H, Liu J, Zhu H, Huai Y, Li M, Liu Z, Huang Y. High Operating Temperature InAs/GaSb Superlattice Based Mid Wavelength Infrared Photodetectors Grown by MOCVD. Photonics. 2021; 8(12):564. https://doi.org/10.3390/photonics8120564

Chicago/Turabian Style

Zhu, He, Jiafeng Liu, Hong Zhu, Yunlong Huai, Meng Li, Zhen Liu, and Yong Huang. 2021. "High Operating Temperature InAs/GaSb Superlattice Based Mid Wavelength Infrared Photodetectors Grown by MOCVD" Photonics 8, no. 12: 564. https://doi.org/10.3390/photonics8120564

APA Style

Zhu, H., Liu, J., Zhu, H., Huai, Y., Li, M., Liu, Z., & Huang, Y. (2021). High Operating Temperature InAs/GaSb Superlattice Based Mid Wavelength Infrared Photodetectors Grown by MOCVD. Photonics, 8(12), 564. https://doi.org/10.3390/photonics8120564

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High Operating Temperature InAs/GaSb Superlattice Based Mid Wavelength Infrared Photodetectors Grown by MOCVD

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