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Open AccessArticle

Dynamic Tuning of Transmission Wavelength of MEMS-Based Ge Waveguides on a Si Beam

Department of Materials Engineering, The University of Tokyo, Tokyo 113-8654, Japan
Author to whom correspondence should be addressed.
Photonics 2016, 3(2), 14;
Received: 1 March 2016 / Revised: 15 March 2016 / Accepted: 17 March 2016 / Published: 30 March 2016
(This article belongs to the Special Issue 3D- and 2D-Nanofabrication for Photonic Devices)
PDF [2043 KB, uploaded 30 March 2016]


Three-dimensional structures of microelectro-mechanical systems (MEMS)-based Ge waveguide on a Si beam were fabricated for dynamic tuning of the fundamental absorption edge of Ge by external stressing. The application of various amounts of external forces up to 1 GPa onto the Si beam shows clear red-shifts in the absorption edge of Ge waveguides on the Si beam by ~40 nm. This shift was reproduced by the deformation potential theory, considering that mode of propagation in the Ge waveguide. The wavelength tuning range obtained makes it possible to cover the whole C-band of optical communication, indicating it to be a promising approach to electro-absorption Ge modulators to get them to work with a broader wavelength range than previously reported. View Full-Text
Keywords: modulators; electro-refractive; dynamic tuning, integrated photonics; MEMS modulators; electro-refractive; dynamic tuning, integrated photonics; MEMS

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Hirase, M.; Nguyen, L.M.; Fukuda, H.; Ishikawa, Y.; Wada, K. Dynamic Tuning of Transmission Wavelength of MEMS-Based Ge Waveguides on a Si Beam. Photonics 2016, 3, 14.

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