Automated Inverse Design Framework for Traveling-Wave Electrode Electro-Optic Modulators with Discrete Fabrication Constraints
Abstract
1. Introduction
2. Materials and Methods
2.1. Design Space Preprocessing
2.2. High-Potential Region Identification
2.3. Fine-Grained Optimization
2.4. Computational Details
3. Results
3.1. Optimization of LiNbO3 Segmented Electrodes Modulators
3.2. Effectiveness Analysis in Engineering
- (1)
- Different Modulator Structures: The proposed framework is applied to the design of modulators with different model structures, verifying its generalization capability. Variations in etching depth and film thickness also represent different modulator configurations.
- (2)
- Different Engineering Conditions: We varied the matching impedance to assess the method’s adaptability under parametric perturbations.
4. Discussion
4.1. Analysis of Microwave Loss Mechanisms
4.2. Experimental Validation and Fabrication Feasibility
4.3. Stability Challenges
5. Conclusions
Author Contributions
Funding
Institutional Review Board Statement
Informed Consent Statement
Data Availability Statement
Conflicts of Interest
Appendix A
| Property | Value |
|---|---|
| Relative Permittivity of Si | 11.9 |
| Electrical Conductivity of Si | 0.01 S/m |
| Relative Permittivity of SiO2 | 4 |
| Relative Permittivity of LiNbO3 | ε11 = 44.2 ε33 = 28.5 |
| Refractive Index of LiNbO3 (1550 nm) | = 2.21 = 2.14 |
| Refractive Index of SiO2 | 1.44 |
| Pockels Index of LiNbO3 | r13 = 8.6 pm/V r33 = 30.8 pm/V |
| Property | Value |
|---|---|
| Learning rate | 0.02 |
| Convergence threshold | 30 |
| Smooth item | 1 × 10−8 |
| Amplification factor | 1.3 |
| Maximum iterations | 300 |
| Property | Value |
|---|---|
| Learning rate | 0.02 |
| Gradient norm threshold | 1 × 10−5 |
| Maximum iterations | 300 |
| Property | Value |
|---|---|
| Gradient norm threshold | 1 × 10−6 |
| Line search parameters | 1 × 10−4, 0.9 |
| Maximum iterations | 300 |
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| Optimization Parameter | Minimum Parameter Value | Maximum Parameter Value | Parameter Meaning | Typical Value [16] |
|---|---|---|---|---|
| ws | 20 μm | 100 μm | Signal electrode width | 50 μm |
| wg | 50 μm | 300 μm | Ground electrode width | / |
| gapin | 3 μm | 5 μm | Inter-electrode spacing | 3 μm |
| gapout | 7 μm | 20 μm | Outer electrode spacing | 15 μm |
| hsio2 | 100 nm | 800 nm | SiO2 thickness | 100 nm |
| height | 1 μm | 5 μm | Electrode height | 1.4 μm |
| T | 30 μm | 80 μm | T-shaped electrode period | 50 μm |
| q | 0.7 | 0.95 | Duty cycle | 0.9 |
| Optimization Method | Average Number of Iterations | Minimum Iteration | Maximum Iteration | Average Number of Final f(X) | Converged Runs |
|---|---|---|---|---|---|
| Proposed Method | 96.7 | 8 | 238 | 28.5 | 20 |
| Gradient Descent Algorithm | 181.5 | 24 | 371 | 30.8 | 16 |
| Quasi-Newton Algorithm | 43 | 4 | 109 | 40.7 | 10 |
| Sequential Optimization * | 2096 | / | / | 27 | / |
| Model | Optimized Results | Optimized Indicators (40 GHz) | Iteration Count | ||
|---|---|---|---|---|---|
| Figure 8a | ws | 21 μm | Zo | 50 Ω | 97 |
| gap | 10 μm | ne | 2.25 | ||
| hsio2 | 0.1 μm | Loss | 3.3 dB/cm | ||
| height | 1 μm | 4 V·cm | |||
| Figure 8b | ws | 11.5 μm | Zo | 48 Ω | 129 |
| gap | 5 μm | ne | 2.25 | ||
| hsio2 | 1.4 μm | Loss | 4.6 dB/cm | ||
| height | 1.4 μm | 2.2 V·cm | |||
| Figure 8c | ws | 80 μm | Zo | 55 Ω | 302 |
| gapin | 3 μm | ne | 2.24 | ||
| gapout | 14 μm | Loss | 4.7 dB/cm | ||
| hsio2 | 0.1 μm | 1.4 V·cm | |||
| height | 1.2 μm | ||||
| T | 30 μm | ||||
| q | 0.9 | ||||
| Figure 8d | ws | 16 μm | Zo | 50 Ω | 107 |
| gapITO | 3 μm | ne | 2.25 | ||
| gapAu | 7 μm | Loss | 4.5 dB/cm | ||
| hsio2 | 0.1 μm | 1.5 V·cm | |||
| height | 2.8 μm | ||||
| Match Parameters | Optimized Results | Optimize Indicators | Other Indicators | |||||||
|---|---|---|---|---|---|---|---|---|---|---|
| Matching impedance | Etching Depth | ws (μm) | gap (μm) | hsio2 (μm) | height (μm) | |∆Z| (Ω) | |∆n| | Loss (dB/cm) | (V·cm) | Iteration count |
| 35 Ω | 300 nm | 23 | 4 | 1.3 | 2 | 1 | 0.02 | 4.5 | 1.7 | 43 |
| 50 Ω | 300 nm | 8 | 5 | 0.1 | 1.5 | 2 | 0.02 | 4.8 | 2.6 | 101 |
| 75 Ω | 300 nm | 6 | 10 | 1.1 | 2 | 1 | 0.02 | 3.7 | 4.3 | 139 |
| 35 Ω | 400 nm | 22 | 4 | 1.3 | 1.8 | 0 | 0.01 | 4.1 | 1.7 | 77 |
| 50 Ω | 400 nm | 11.5 | 5 | 1.4 | 1.4 | 2 | 0 | 4.6 | 2.2 | 129 |
| 75 Ω | 400 nm | 7 | 12 | 0.9 | 1.3 | 1 | 0 | 3.6 | 4.9 | 121 |
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You, Q.; Hua, P.; Chen, Y.; Chen, X.; Ye, T. Automated Inverse Design Framework for Traveling-Wave Electrode Electro-Optic Modulators with Discrete Fabrication Constraints. Photonics 2026, 13, 500. https://doi.org/10.3390/photonics13050500
You Q, Hua P, Chen Y, Chen X, Ye T. Automated Inverse Design Framework for Traveling-Wave Electrode Electro-Optic Modulators with Discrete Fabrication Constraints. Photonics. 2026; 13(5):500. https://doi.org/10.3390/photonics13050500
Chicago/Turabian StyleYou, Qi, Pingrang Hua, Yifei Chen, Xingshan Chen, and Tong Ye. 2026. "Automated Inverse Design Framework for Traveling-Wave Electrode Electro-Optic Modulators with Discrete Fabrication Constraints" Photonics 13, no. 5: 500. https://doi.org/10.3390/photonics13050500
APA StyleYou, Q., Hua, P., Chen, Y., Chen, X., & Ye, T. (2026). Automated Inverse Design Framework for Traveling-Wave Electrode Electro-Optic Modulators with Discrete Fabrication Constraints. Photonics, 13(5), 500. https://doi.org/10.3390/photonics13050500
