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Article

Numerical Investigation of an AlN-Based Resonant Detector with a Plasmon Aperture Absorber for Dual-Band IR Sensing

by
Jicong Zhao
1,2,3,
Mingmin Ge
1,2,
Shitao Lv
1,2,
Haiyan Sun
1,2,* and
Chenguang Song
4,*
1
School of Information Science and Technology, Nantong University, Nantong 226019, China
2
Tongke School of Microelectronics, Nantong University, Nantong 226019, China
3
State Key Laboratories of Transducer Technology, Shanghai 200050, China
4
School of Electrical Engineering, Nantong University, Nantong 226019, China
*
Authors to whom correspondence should be addressed.
Electronics 2020, 9(8), 1264; https://doi.org/10.3390/electronics9081264
Submission received: 15 July 2020 / Revised: 30 July 2020 / Accepted: 4 August 2020 / Published: 6 August 2020
(This article belongs to the Section Microelectronics)
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Abstract

An aluminum nitride (AlN) piezoelectric resonant infrared (IR) detector based on a Lame-wave resonator (LWR) and plasmon apertures was designed for dual-band sensing, and was investigated by using the finite element method (FEM) and finite difference time domain (FDTD) simulations. A plasmon structure with the apertures was designed on the surface of the detector in order to maintain electrical performance and to obtain ultrahigh dual-band IR absorption. The electrical performance of the LWR with the plasmon apertures was comparable to that of the LWR with floating electrodes, which was found to be superior to that of the LWRs with plasmon particles or open electrodes. Both of the rectangle aperture and cross-shaped aperture absorbers can achieve ultrahigh dual-band absorptions of up to 97%, and the cross-shaped aperture absorber is insensitive to the polarization angle. Moreover, a detailed optimization analysis for the thermal properties of the detector was conducted to obtain favorable responsivity and response speed. The calculated results demonstrate that the proposed resonant detector has great potential applications in IR detection.
Keywords: infrared detector; AlN Lame-wave resonator; plasmon aperture array; dual-band absorption; thermal properties infrared detector; AlN Lame-wave resonator; plasmon aperture array; dual-band absorption; thermal properties

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MDPI and ACS Style

Zhao, J.; Ge, M.; Lv, S.; Sun, H.; Song, C. Numerical Investigation of an AlN-Based Resonant Detector with a Plasmon Aperture Absorber for Dual-Band IR Sensing. Electronics 2020, 9, 1264. https://doi.org/10.3390/electronics9081264

AMA Style

Zhao J, Ge M, Lv S, Sun H, Song C. Numerical Investigation of an AlN-Based Resonant Detector with a Plasmon Aperture Absorber for Dual-Band IR Sensing. Electronics. 2020; 9(8):1264. https://doi.org/10.3390/electronics9081264

Chicago/Turabian Style

Zhao, Jicong, Mingmin Ge, Shitao Lv, Haiyan Sun, and Chenguang Song. 2020. "Numerical Investigation of an AlN-Based Resonant Detector with a Plasmon Aperture Absorber for Dual-Band IR Sensing" Electronics 9, no. 8: 1264. https://doi.org/10.3390/electronics9081264

APA Style

Zhao, J., Ge, M., Lv, S., Sun, H., & Song, C. (2020). Numerical Investigation of an AlN-Based Resonant Detector with a Plasmon Aperture Absorber for Dual-Band IR Sensing. Electronics, 9(8), 1264. https://doi.org/10.3390/electronics9081264

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