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Sol-Gel Processed Yttrium-Doped SnO2 Thin Film Transistors
Open AccessArticle

Effect of Mg Doping on the Electrical Performance of a Sol-Gel-Processed SnO2 Thin-Film Transistor

1
School of Electronics Engineering, Kyungpook National University, Daegu 41566, Korea
2
Department of Electronic and Electrical Convergence Engineering, Hongik University, Sejong 30016, Korea
*
Author to whom correspondence should be addressed.
Electronics 2020, 9(3), 523; https://doi.org/10.3390/electronics9030523
Received: 7 March 2020 / Revised: 20 March 2020 / Accepted: 20 March 2020 / Published: 22 March 2020
(This article belongs to the Special Issue Applications of Thin Films in Microelectronics)
Sol-gel-processed Mg-doped SnO2 thin-film transistors (TFTs) were successfully fabricated. The effect of Mg concentration on the structural, chemical, and optical properties of thin films and the corresponding TFT devices was investigated. The results indicated that an optimal Mg concentration yielded an improved negative bias stability and increased optical band gap, resulting in transparent devices. Furthermore, the optimal device performance was obtained with 0.5 wt% Mg. The fabricated 0.5 wt% Mg-doped SnO2 TFT was characterized by a field effect mobility, a subthreshold swing, and Ion/Ioff ratio of 4.23 cm2/Vs, 1.37 V/decade, and ~1 × 107, respectively. The added Mg suppressed oxygen-vacancy formation, thereby improving the bias stability. This work may pave the way for the development of alkaline-earth-metal-doped SnO2-based thin-film devices. View Full-Text
Keywords: sol-gel process; thin-film transistor; SnO2; Mg doping; negative bias stability sol-gel process; thin-film transistor; SnO2; Mg doping; negative bias stability
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MDPI and ACS Style

Lee, W.-Y.; Lee, H.; Ha, S.; Lee, C.; Bae, J.-H.; Kang, I.-M.; Kim, K.; Jang, J. Effect of Mg Doping on the Electrical Performance of a Sol-Gel-Processed SnO2 Thin-Film Transistor. Electronics 2020, 9, 523.

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