Article Versions Notes

Caria A, De Santi C, Dogmus E, Medjdoub F, Zanoni E, Meneghesso G, Meneghini M. Excitation Intensity and Temperature-Dependent Performance of InGaN/GaN Multiple Quantum Wells Photodetectors. Electronics. 2020; 9(11):1840. https://doi.org/10.3390/electronics9111840

Caria, Alessandro, Carlo De Santi, Ezgi Dogmus, Farid Medjdoub, Enrico Zanoni, Gaudenzio Meneghesso, and Matteo Meneghini. 2020. "Excitation Intensity and Temperature-Dependent Performance of InGaN/GaN Multiple Quantum Wells Photodetectors" Electronics 9, no. 11: 1840. https://doi.org/10.3390/electronics9111840

Caria, A., De Santi, C., Dogmus, E., Medjdoub, F., Zanoni, E., Meneghesso, G., & Meneghini, M. (2020). Excitation Intensity and Temperature-Dependent Performance of InGaN/GaN Multiple Quantum Wells Photodetectors. Electronics, 9(11), 1840. https://doi.org/10.3390/electronics9111840