Next Article in Journal
Localization of Moving Objects Based on RFID Tag Array and Laser Ranging Information
Previous Article in Journal
Theoretical Study of InAlN/GaN High Electron Mobility Transistor (HEMT) with a Polarization-Graded AlGaN Back-Barrier Layer
Previous Article in Special Issue
Design of Broadband W-Band Waveguide Package and Application to Low Noise Amplifier Module
Article Menu
Issue 8 (August) cover image

Export Article

Open AccessArticle

Permittivity of Undoped Silicon in the Millimeter Wave Range

1
State Key Laboratory of Complex Electromagnetic Environment Effects on Electronics and Information System, Luoyang 471003, China
2
School of Physics and Electronic Information, Anhui Normal University, Wuhu 241002, China
3
Anhui Provincial Engineering Laboratory on Information Fusion and Control of Intelligent Robot, Wuhu 241002, China
4
Terahertz Research Centre, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
*
Authors to whom correspondence should be addressed.
Electronics 2019, 8(8), 886; https://doi.org/10.3390/electronics8080886
Received: 18 July 2019 / Revised: 31 July 2019 / Accepted: 8 August 2019 / Published: 10 August 2019
(This article belongs to the Special Issue Millimeter-Wave (mmWave) Communications)
  |  
PDF [2213 KB, uploaded 10 August 2019]
  |  

Abstract

With the rapid development of millimeter wave technology, it is a fundamental requirement to understand the permittivity of materials in this frequency range. This paper describes the dielectric measurement of undoped silicon in the E-band (60–90 GHz) using a free-space quasi-optical system. This system is capable of creating local plane wave, which is desirable for dielectric measurement in the millimeter wave range. Details of the design and performance of the quasi-optical system are presented. The principle of dielectric measurement and retrieval process are described incorporating the theories of wave propagation and scattering parameters. Measured results of a sheet of undoped silicon are in agreement with the published results in the literature, within a discrepancy of 1%. It is also observed that silicon has a small temperature coefficient for permittivity. This work is helpful for understanding the dielectric property of silicon in the millimeter wave range. The method is applicable to other electronic materials as well as liquid samples. View Full-Text
Keywords: millimeter wave; quasi-optics; free space method; undoped silicon; permittivity; temperature millimeter wave; quasi-optics; free space method; undoped silicon; permittivity; temperature
Figures

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
SciFeed

Share & Cite This Article

MDPI and ACS Style

Yang, X.; Liu, X.; Yu, S.; Gan, L.; Zhou, J.; Zeng, Y. Permittivity of Undoped Silicon in the Millimeter Wave Range. Electronics 2019, 8, 886.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Electronics EISSN 2079-9292 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top