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Open AccessArticle

Analysis of Memory Matrices with HfO2 Memristors in a PSpice Environment

Department Theoretical Electrical Engineering, Technical University of Sofia, 1000 Sofia, Bulgaria
Electronics 2019, 8(4), 383; https://doi.org/10.3390/electronics8040383
Received: 1 March 2019 / Revised: 15 March 2019 / Accepted: 27 March 2019 / Published: 29 March 2019
(This article belongs to the Section Circuit and Signal Processing)
The investigation of new memory circuits is very important for the development of future generations’ non-volatile and Random Access Memories (RAM) memories and modern schemes for in-memory calculations. The purpose of the present research is to propose a detailed analysis of passive and hybrid memristor-based memory crossbars with separating metal oxide semiconductor (MOS) transistors. The considered memristors are based on HfO2. The transistors are applied to eliminate the parasitic paths in the schemes. For simulations, a previously proposed strongly nonlinear modified window function by the author together with a physical nonlinear memristor model is used. The considered model is adjusted according to the experimental i–v relationship of HfO2 memristors. The i–v relationship obtained by the simulation is successfully fitted to the respective relationship derived by physical measurements. A good coincidence between these characteristics is established. Several basic window functions are also applied for comparison to the corresponding results. The proposed model is analyzed in Personal Simulation Program with Integrated Circuit Emphasis (PSpice) and it is also used for simulation of a 5 × 5 fragment of a memristor memory crossbar with isolating transistors and for the analysis of a 6 × 6 passive memory matrix. The investigated matrices are simulated for writing, reading, and erasing information. It is established that the model proposed could be used for simulations of complex memristor circuits. View Full-Text
Keywords: memristor-based memory crossbar; nonlinear dopant drift; modified window function; parasitic paths memristor-based memory crossbar; nonlinear dopant drift; modified window function; parasitic paths
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Mladenov, V. Analysis of Memory Matrices with HfO2 Memristors in a PSpice Environment. Electronics 2019, 8, 383.

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