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Electronics 2018, 7(8), 141; https://doi.org/10.3390/electronics7080141

Analog Memristive Characteristics and Conditioned Reflex Study Based on Au/ZnO/ITO Devices

1
School of Physics & Optoelectric Engineering, GuangDong University of Technology, Guangzhou 510006, China
2
School of Electrical Engineering & Automation, JiangXi University of Science and Technology, Ganzhou 341000, China
*
Author to whom correspondence should be addressed.
Received: 5 July 2018 / Revised: 28 July 2018 / Accepted: 1 August 2018 / Published: 8 August 2018
(This article belongs to the Special Issue Nanoelectronic Materials, Devices and Modeling)
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Abstract

As the fourth basic electronic component, the application fields of the memristive devices are diverse. The digital resistive switching with sudden resistance change is suitable for the applications of information storage, while the analog memristive devices with gradual resistance change are required in the neural system simulation. In this paper, a transparent device of ZnO films deposited by the magnetron sputtering on indium tin oxides (ITO) glass was firstly prepared and found to show typical analog memristive switching behaviors, including an I–V curve that exhibits a ‘pinched hysteresis loops’ fingerprint. The conductive mechanism of the device was discussed, and the LTspice model was built to emulate the pinched hysteresis loops of the I–V curve. Based on the LTspice model and the Pavlov training circuit, a conditioned reflex experiment has been successfully completed both in the computer simulation and the physical analog circuits. The prepared device also displayed synapses-like characteristics, in which resistance decreased and gradually stabilized with time under the excitation of a series of voltage pulse signals. View Full-Text
Keywords: memristive device; ZnO films; conditioned reflex memristive device; ZnO films; conditioned reflex
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).

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Cheng, T.; Rao, J.; Tang, X.; Yang, L.; Liu, N. Analog Memristive Characteristics and Conditioned Reflex Study Based on Au/ZnO/ITO Devices. Electronics 2018, 7, 141.

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