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Open AccessArticle

Intermodulation Linearity in High-k/Metal Gate 28 nm RF CMOS Transistors

1
Department of Electrical and Computer Engineering, Alabama Microelectronics Science and Technology Center, Auburn University, 200 Broun Hall, Auburn, AL 36849, USA
2
MaxLinear Inc., Carlsbad, CA 92008, USA
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Author to whom correspondence should be addressed.
Academic Editor: Geok Ing Ng
Electronics 2015, 4(3), 614-622; https://doi.org/10.3390/electronics4030614
Received: 3 July 2015 / Revised: 28 August 2015 / Accepted: 1 September 2015 / Published: 11 September 2015
(This article belongs to the Special Issue Microwave/ Millimeter-Wave Devices and MMICs)
This paper presents experimental characterization, simulation, and Volterra series based analysis of intermodulation linearity on a high-k/metal gate 28 nm RF CMOS technology. A figure-of-merit is proposed to account for both VGS and VDS nonlinearity, and extracted from frequency dependence of measured IIP3. Implications to biasing current and voltage optimization for linearity are discussed. View Full-Text
Keywords: 28 nm; intermodulation; linearity; IP3; RF CMOS; high-k/metal gate 28 nm; intermodulation; linearity; IP3; RF CMOS; high-k/metal gate
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MDPI and ACS Style

Li, Z.; Niu, G.; Liang, Q.; Imura, K. Intermodulation Linearity in High-k/Metal Gate 28 nm RF CMOS Transistors. Electronics 2015, 4, 614-622.

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