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Electronics 2015, 4(3), 586-613;

Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

Faculty of Electrical Engineering, Universiti Teknologi Malaysia, Skudai, Johor 81310, Malaysia
Author to whom correspondence should be addressed.
Academic Editor: Mostafa Bassiouni
Received: 6 August 2015 / Revised: 25 August 2015 / Accepted: 6 September 2015 / Published: 9 September 2015
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Resistive switching effect in transition metal oxide (TMO) based material is often associated with the valence change mechanism (VCM). Typical modeling of valence change resistive switching memory consists of three closely related phenomena, i.e., conductive filament (CF) geometry evolution, conduction mechanism and temperature dynamic evolution. It is widely agreed that the electrochemical reduction-oxidation (redox) process and oxygen vacancies migration plays an essential role in the CF forming and rupture process. However, the conduction mechanism of resistive switching memory varies considerably depending on the material used in the dielectric layer and selection of electrodes. Among the popular observations are the Poole-Frenkel emission, Schottky emission, space-charge-limited conduction (SCLC), trap-assisted tunneling (TAT) and hopping conduction. In this article, we will conduct a survey on several published valence change resistive switching memories with a particular interest in the I-V characteristic and the corresponding conduction mechanism. View Full-Text
Keywords: resistive switching; nonvolatile memory; memristor; conduction mechanism; RRAM resistive switching; nonvolatile memory; memristor; conduction mechanism; RRAM

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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).

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Lim, E.W.; Ismail, R. Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey. Electronics 2015, 4, 586-613.

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