Huang, Y.; Liang, X.; Zhang, L.; Wang, M.; Wang, T.; Liu, C.
Low Saturation Voltage and High Stability in Dual-Mode Schottky Barrier TFTs Using Bilayer IGZO. Electronics 2025, 14, 1380.
https://doi.org/10.3390/electronics14071380
AMA Style
Huang Y, Liang X, Zhang L, Wang M, Wang T, Liu C.
Low Saturation Voltage and High Stability in Dual-Mode Schottky Barrier TFTs Using Bilayer IGZO. Electronics. 2025; 14(7):1380.
https://doi.org/10.3390/electronics14071380
Chicago/Turabian Style
Huang, Yi, Xiaoci Liang, Li Zhang, Mengye Wang, Tianyue Wang, and Chuan Liu.
2025. "Low Saturation Voltage and High Stability in Dual-Mode Schottky Barrier TFTs Using Bilayer IGZO" Electronics 14, no. 7: 1380.
https://doi.org/10.3390/electronics14071380
APA Style
Huang, Y., Liang, X., Zhang, L., Wang, M., Wang, T., & Liu, C.
(2025). Low Saturation Voltage and High Stability in Dual-Mode Schottky Barrier TFTs Using Bilayer IGZO. Electronics, 14(7), 1380.
https://doi.org/10.3390/electronics14071380