Gao, X.; Li, Y.; Li, T.; Li, X.; Wang, J.
A High-Throughput, BRAM-Efficient NTT/INTT Accelerator for ML-KEM. Electronics 2025, 14, 4868.
https://doi.org/10.3390/electronics14244868
AMA Style
Gao X, Li Y, Li T, Li X, Wang J.
A High-Throughput, BRAM-Efficient NTT/INTT Accelerator for ML-KEM. Electronics. 2025; 14(24):4868.
https://doi.org/10.3390/electronics14244868
Chicago/Turabian Style
Gao, Xianwei, Yitong Li, Tianyao Li, Xuemei Li, and Jianxin Wang.
2025. "A High-Throughput, BRAM-Efficient NTT/INTT Accelerator for ML-KEM" Electronics 14, no. 24: 4868.
https://doi.org/10.3390/electronics14244868
APA Style
Gao, X., Li, Y., Li, T., Li, X., & Wang, J.
(2025). A High-Throughput, BRAM-Efficient NTT/INTT Accelerator for ML-KEM. Electronics, 14(24), 4868.
https://doi.org/10.3390/electronics14244868