Marki, R.; Dehimi, L.; Zeghdar, K.; Pezzimenti, F.; Messina, G.; Della Corte, F.G.
Impact of Physical and Material Parameters on the Threshold Voltage and the Channel Resistance of Nanowire Field-Effect Transistors for Advanced Nanoscale Devices. Electronics 2025, 14, 4279.
https://doi.org/10.3390/electronics14214279
AMA Style
Marki R, Dehimi L, Zeghdar K, Pezzimenti F, Messina G, Della Corte FG.
Impact of Physical and Material Parameters on the Threshold Voltage and the Channel Resistance of Nanowire Field-Effect Transistors for Advanced Nanoscale Devices. Electronics. 2025; 14(21):4279.
https://doi.org/10.3390/electronics14214279
Chicago/Turabian Style
Marki, Rebiha, Lakhdar Dehimi, Kamal Zeghdar, Fortunato Pezzimenti, Giacomo Messina, and Francesco G. Della Corte.
2025. "Impact of Physical and Material Parameters on the Threshold Voltage and the Channel Resistance of Nanowire Field-Effect Transistors for Advanced Nanoscale Devices" Electronics 14, no. 21: 4279.
https://doi.org/10.3390/electronics14214279
APA Style
Marki, R., Dehimi, L., Zeghdar, K., Pezzimenti, F., Messina, G., & Della Corte, F. G.
(2025). Impact of Physical and Material Parameters on the Threshold Voltage and the Channel Resistance of Nanowire Field-Effect Transistors for Advanced Nanoscale Devices. Electronics, 14(21), 4279.
https://doi.org/10.3390/electronics14214279
