He, Y.; Gao, R.; Ma, T.; Zhang, X.; Zhang, X.; Yang, Y.
Total Ionizing Dose Effects on Lifetime of NMOSFETs Due to Hot Carrier-Induced Stress. Electronics 2025, 14, 2563.
https://doi.org/10.3390/electronics14132563
AMA Style
He Y, Gao R, Ma T, Zhang X, Zhang X, Yang Y.
Total Ionizing Dose Effects on Lifetime of NMOSFETs Due to Hot Carrier-Induced Stress. Electronics. 2025; 14(13):2563.
https://doi.org/10.3390/electronics14132563
Chicago/Turabian Style
He, Yujuan, Rui Gao, Teng Ma, Xiaowen Zhang, Xianyu Zhang, and Yintang Yang.
2025. "Total Ionizing Dose Effects on Lifetime of NMOSFETs Due to Hot Carrier-Induced Stress" Electronics 14, no. 13: 2563.
https://doi.org/10.3390/electronics14132563
APA Style
He, Y., Gao, R., Ma, T., Zhang, X., Zhang, X., & Yang, Y.
(2025). Total Ionizing Dose Effects on Lifetime of NMOSFETs Due to Hot Carrier-Induced Stress. Electronics, 14(13), 2563.
https://doi.org/10.3390/electronics14132563