Order Article Reprints

Zhao X, Wang H, Zhang Y, Chen Y, Cheng S, Wang X, Peng F, Yang Y, Tang G, Bai Y, et al. Model Parameters and Degradation Mechanism Analysis of Indium Phosphide Hetero-Junction Bipolar Transistors Exposed to Proton Irradiation. Electronics. 2024; 13(10):1831. https://doi.org/10.3390/electronics13101831

Zhao, Xiaohong, Hongwei Wang, Yihao Zhang, You Chen, Siyi Cheng, Xing Wang, Fang Peng, Yongjian Yang, Guannan Tang, Yurong Bai, and et al. 2024. "Model Parameters and Degradation Mechanism Analysis of Indium Phosphide Hetero-Junction Bipolar Transistors Exposed to Proton Irradiation" Electronics 13, no. 10: 1831. https://doi.org/10.3390/electronics13101831

Zhao, X., Wang, H., Zhang, Y., Chen, Y., Cheng, S., Wang, X., Peng, F., Yang, Y., Tang, G., Bai, Y., & Sun, S. (2024). Model Parameters and Degradation Mechanism Analysis of Indium Phosphide Hetero-Junction Bipolar Transistors Exposed to Proton Irradiation. Electronics, 13(10), 1831. https://doi.org/10.3390/electronics13101831