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Journal: ElectronicsVolume: 12Number: 1008
Article: Effects of Different Factors on Single Event Effects Introduced by Heavy Ions in SiGe Heterojunction Bipolar Transistor: A TCAD Simulation
  • Authors:
  • Zheng Zhang1,
  • Gang Guo1,* and
  • Futang Li1
  • et al.
Link: https://www.mdpi.com/2079-9292/12/4/1008

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