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Journal: Electronics, 2023
Volume: 12
Number: 648

Article: The Inflection Point of Single Event Transient in SiGe HBT at a Cryogenic Temperature
Authors: by Xiaoyu Pan, Hongxia Guo, Chao Lu, Hong Zhang and Yinong Liu
Link: https://www.mdpi.com/2079-9292/12/3/648

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