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Journal: Electronics, 2023
Volume: 12
Number: 4435
Article:
Research Progress in Breakdown Enhancement for GaN-Based High-Electron-Mobility Transistors
Authors:
by
Zhiwen Tian, Xuan Ji, Dongwei Yang and Pei Liu
Link:
https://www.mdpi.com/2079-9292/12/21/4435
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