Article Versions Notes

Xiang Y, Liang X, Feng J, Feng H, Zhang D, Wei Y, Yu X, Guo Q. Refined Analysis of Leakage Current in SiC Power Metal Oxide Semiconductor Field Effect Transistors after Heavy Ion Irradiation. Electronics. 2023; 12(20):4349. https://doi.org/10.3390/electronics12204349

Xiang, Yutang, Xiaowen Liang, Jie Feng, Haonan Feng, Dan Zhang, Ying Wei, Xuefeng Yu, and Qi Guo. 2023. "Refined Analysis of Leakage Current in SiC Power Metal Oxide Semiconductor Field Effect Transistors after Heavy Ion Irradiation" Electronics 12, no. 20: 4349. https://doi.org/10.3390/electronics12204349

Xiang, Y., Liang, X., Feng, J., Feng, H., Zhang, D., Wei, Y., Yu, X., & Guo, Q. (2023). Refined Analysis of Leakage Current in SiC Power Metal Oxide Semiconductor Field Effect Transistors after Heavy Ion Irradiation. Electronics, 12(20), 4349. https://doi.org/10.3390/electronics12204349