Article Versions Notes

Zuo X, Lu J, Liu X, Bai Y, Tian X, Cheng G, Tang Y, Yang C, Chen H. A 1200 V SiC Trench MOSFET with a Laterally Widened P-Shield Region to Enhance the Short-Circuit Ruggedness. Electronics. 2022; 11(7):1077. https://doi.org/10.3390/electronics11071077

Zuo, Xinxin, Jiang Lu, Xinyu Liu, Yun Bai, Xiaoli Tian, Guodong Cheng, Yidan Tang, Chengyue Yang, and Hong Chen. 2022. "A 1200 V SiC Trench MOSFET with a Laterally Widened P-Shield Region to Enhance the Short-Circuit Ruggedness" Electronics 11, no. 7: 1077. https://doi.org/10.3390/electronics11071077

Zuo, X., Lu, J., Liu, X., Bai, Y., Tian, X., Cheng, G., Tang, Y., Yang, C., & Chen, H. (2022). A 1200 V SiC Trench MOSFET with a Laterally Widened P-Shield Region to Enhance the Short-Circuit Ruggedness. Electronics, 11(7), 1077. https://doi.org/10.3390/electronics11071077