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Journal: Electronics, 2021
Volume: 10
Number: 635

Article: AlGaN Channel High Electron Mobility Transistors with Regrown Ohmic Contacts
Authors: by Idriss Abid, Jash Mehta, Yvon Cordier, Joff Derluyn, Stefan Degroote, Hideto Miyake and Farid Medjdoub
Link: https://www.mdpi.com/2079-9292/10/6/635

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